Inventor · disambiguated record
Jongsun Sel
Also filed as: SEL JONGSUN
21 granted patents·2 pending applications·230 citations·filing 2008–2018
95Inventor score
Files withSANDISK TECHNOLOGIES LLC11SANDISK TECHNOLOGIES INC7SEL JONGSUN2KIM TAE YOUNG1SAMSUNG ELECTRONCIS CO LTD1
Top patents by PatentIndex Score
23 records- 0198US10319680B1Metal contact via structure surrounded by an air gap and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jun 11, 2019·35 cites·20 claims
- 0297US10014316B2Three-dimensional memory device with leakage reducing support pillar structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 3, 2018·35 cites·23 claims
- 0396US10283566B2Three-dimensional memory device with through-stack contact via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 7, 2019·21 cites·13 claims
- 0496US8969206B1Triple patterning NAND flash memory with stepped mandrelSANDISK TECHNOLOGIES INC·Filed 2013·Granted Mar 3, 2015·29 cites·17 claims
- 0595US10115895B1Vertical field effect transisitors having a rectangular surround gate and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·15 cites·20 claims
- 0694US9601508B2Blocking oxide in memory opening integration scheme for three-dimensional memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Mar 21, 2017·11 cites·15 claims
- 0793US10224373B2Three-dimensional ReRAM memory device employing replacement word lines and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 5, 2019·11 cites·10 claims
- 0893US8932955B1Triple patterning NAND flash memory with SOCSANDISK TECHNOLOGIES INC·Filed 2013·Granted Jan 13, 2015·17 cites·15 claims
- 0990US10290681B2Array of hole-type surround gate vertical field effect transistors and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 14, 2019·8 cites·18 claims
- 1089US8379456B2Nonvolatile memory devices having dummy cell and bias methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 19, 2013·14 cites·19 claims
- 1185US8665643B2Non-volatile memory device and read method thereofKIM TAE-YOUNG·Filed 2012·Granted Mar 4, 2014·9 cites·50 claims
- 1283US8879331B2Shared bit line string architectureSANDISK TECHNOLOGIES INC·Filed 2013·Granted Nov 4, 2014·8 cites·20 claims
- 1381US10115770B2Methods and apparatus for three-dimensional nonvolatile memorySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·3 cites·16 claims
- 1478US9099532B2Processes for NAND flash memory fabricationSANDISK TECHNOLOGIES INC·Filed 2013·Granted Aug 4, 2015·4 cites·8 claims
- 1573US7821834B2Nonvolatile memory devices that utilize dummy memory cells to improve data reliability in charge trap memory arraysSAMSUNG ELECTRONCIS CO LTD·Filed 2008·Granted Oct 26, 2010·5 cites·19 claims
- 1668US9224475B2Structures and methods for making NAND flash memorySEL JONGSUN·Filed 2012·Granted Dec 29, 2015·3 cites·8 claims
- 1764US9613806B2Triple patterning NAND flash memorySANDISK TECHNOLOGIES LLC·Filed 2013·Granted Apr 4, 2017·1 cites·16 claims
- 1860US8932948B2Memory cell floating gate replacementSANDISK TECHNOLOGIES INC·Filed 2013·Granted Jan 13, 2015·1 cites·13 claims
- 1943US9153595B2Methods of making word lines and select lines in NAND flash memorySEL JONGSUN·Filed 2012·Granted Oct 6, 2015·0 cites·13 claims
- 2041US9129854B2Full metal gate replacement process for NAND flash memorySANDISK TECHNOLOGIES INC·Filed 2012·Granted Sep 8, 2015·0 cites·18 claims
- 2141US2019034125A1Methods and apparatus for three-dimensional nonvolatile memorySANDISK TECHNOLOGIES LLC·Filed 2017·Application pending·0 cites
- 2237US10707314B2Surround gate vertical field effect transistors including tubular and strip electrodes and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 7, 2020·0 cites·13 claims
- 2337US2019051703A1Two-dimensional array of surround gate vertical field effect transistors and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →