Inventor · disambiguated record
Jong-Sun Sel
Also filed as: SEL JONG-SUN
40 granted patents·7 pending applications·238 citations·filing 2002–2023
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD29SEL JONG-SUN7Intel NDTM US LLC3SANDISK TECHNOLOGIES INC2CHOI JUNG-DAL1
Top patents by PatentIndex Score
47 records- 0197US7480178B2NAND flash memory device having dummy memory cells and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 20, 2009·59 cites·5 claims
- 0293US7881114B2NAND flash memory device having dummy memory cells and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 1, 2011·25 cites·14 claims
- 0391US7399672B2Methods of forming nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 15, 2008·19 cites·14 claims
- 0488US7812375B2Non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 12, 2010·13 cites·19 claims
- 0586US7776687B2Semiconductor device having a gate contact structure capable of reducing interfacial resistance and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 17, 2010·9 cites·21 claims
- 0685US7397093B2Semiconductor devices with sidewall conductive patterns methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 8, 2008·9 cites·14 claims
- 0783US8045383B2Non-volatile memory devices including dummy word lines and related structures and methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 25, 2011·11 cites·8 claims
- 0882US8228738B2NAND flash memory device having dummy memory cells and methods of operating samePARK KI-TAE·Filed 2010·Granted Jul 24, 2012·6 cites·13 claims
- 0978US7605430B2Nonvolatile memory devices having a fin shaped active region and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 20, 2009·6 cites·14 claims
- 1076US9711522B2Memory hole structure in three dimensional memorySANDISK TECHNOLOGIES LLC·Filed 2014·Granted Jul 18, 2017·5 cites·13 claims
- 1175US7084440B2Integrated circuit layout and a semiconductor device manufactured using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 1, 2006·20 cites·20 claims
- 1274US8085592B2Charge-trap flash memory device with reduced erasure stress and related programming and erasing methods thereofYUN SUNG-WON·Filed 2009·Granted Dec 27, 2011·9 cites·5 claims
- 1373US8198157B2Methods of forming non-volatile memory devices including dummy word linesSEL JONG-SUN·Filed 2011·Granted Jun 12, 2012·4 cites·14 claims
- 1468US6828637B2Semiconductor memory devices having dummy active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 7, 2004·11 cites·4 claims
- 1566US6740940B2Semiconductor memory devices having dummy active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 25, 2004·10 cites·10 claims
- 1664US8675409B2Non-volatile memory devicesSEL JONG-SUN·Filed 2012·Granted Mar 18, 2014·2 cites·20 claims
- 1764US7863686B2Nonvolatile memory devices having a fin shaped active regionSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 4, 2011·2 cites·8 claims
- 1863US7645644B2Data line layout in semiconductor memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 12, 2010·4 cites·7 claims
- 1962US7666717B2Non-volatile memory devices including fuse covered field regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 23, 2010·2 cites·10 claims
- 2061US8372711B2Methods of fabricating semiconductor devices with sidewall conductive patternsSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Feb 12, 2013·1 cites·4 claims
- 2161US7605473B2Nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 20, 2009·1 cites·5 claims
- 2260US7795643B2Cell array of semiconductor memory device and a method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 14, 2010·4 cites·19 claims
- 2355US7572684B2Nonvolatile memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 11, 2009·2 cites·12 claims
- 2454US9330969B2Air gap formation between bit lines with top protectionSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 3, 2016·0 cites·15 claims
- 2554US7973354B2Semiconductor devices with sidewall conductive patterns and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 5, 2011·0 cites·5 claims
- 2653US6806518B2Semiconductor memory devices having dummy active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 19, 2004·4 cites·6 claims
- 2753US2009325374A1Methods of Fabricating Nonvolatile Memory DevicesCHOI JUNG-DAL·Filed 2009·Application pending·0 cites
- 2853US2023345715A1Method for pillar bending improvement by cut tiers pattern implementationIntel NDTM US LLC·Filed 2023·Application pending·0 cites
- 2952US9337085B2Air gap formation between bit lines with side protectionSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 10, 2016·0 cites·9 claims
- 3052US7884425B2Non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 8, 2011·0 cites·19 claims
- 3149US2008246073A1Nonvolatile Memory Devices Including a Resistor RegionLEE CHANG-HYUN·Filed 2008·Application pending·0 cites
- 3248US7816245B2Method of forming semiconductor devices in which a cell gate pattern and a resistor pattern are formed of a same materialSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 19, 2010·0 cites·6 claims
- 3348US2024013836A1Prevention of floating gate 3d-nand cell residual by using hybrid plug process in super-deck structureIntel NDTM US LLC·Filed 2023·Application pending·0 cites
- 3445US8217467B2Semiconductor memory devicesSEL JONG-SUN·Filed 2011·Granted Jul 10, 2012·0 cites·11 claims
- 3544US7772639B2Charge-trap nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 10, 2010·0 cites·8 claims
- 3643US12120878B2Block-to-block isolation and deep contact using pillars in a memory arrayIntel NDTM US LLC·Filed 2020·Granted Oct 15, 2024·0 cites·20 claims
- 3742US8329574B2Methods of fabricating flash memory devices having shared sub active regionsSEL JONG-SUN·Filed 2011·Granted Dec 11, 2012·0 cites·15 claims
- 3842US7132728B2Non-volatile memory devices including fuse covered field regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 7, 2006·0 cites·10 claims
- 3942US2011031559A1Semiconductor devices in which a cell gate pattern and a resistor pattern are formed of a same material and methods of forming the sameSEL JONG-SUN·Filed 2010·Application pending·0 cites
- 4041US8188532B2Semiconductor device having a gate contact structure capable of reducing interfacial resistanceKANG CHANG-SEOK·Filed 2010·Granted May 29, 2012·0 cites·9 claims
- 4141US8021978B2Methods of fabricating flash memory devices having shared sub active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Sep 20, 2011·0 cites·3 claims
- 4240US7385834B2Data line layout in semiconductor memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 10, 2008·0 cites·10 claims
- 4339US2006208302A1Non-volatile memory device having charge trap layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4438US8558283B2Semiconductor device including dummySEL JONG-SUN·Filed 2010·Granted Oct 15, 2013·0 cites·12 claims
- 4537US8237199B2Cell array of semiconductor memory device and a method of forming the sameSEL JONG-SUN·Filed 2010·Granted Aug 7, 2012·0 cites·9 claims
- 4637US7723776B2Flash memory devices having shared sub active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 25, 2010·0 cites·22 claims
- 4735US2010178773A1Method of forming semiconductor devices employing double patterningSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →