Inventor · disambiguated record
John Jianshi Wang
Also filed as: WANG JOHN · WANG JOHN J · WANG JOHN JIANSHI
46 granted patents·2 pending applications·495 citations·filing 1997–2024
98Inventor score
Top patents by PatentIndex Score
48 records- 0193US10056199B2Mesoporous nanocrystalline film architecture for capacitive storage devicesUNIV CALIFORNIA·Filed 2017·Granted Aug 21, 2018·5 cites·29 claims
- 0292US7101722B1In-line voltage contrast determination of tunnel oxide weakness in integrated circuit technology developmentADVANCED MICRO DEVICES INC·Filed 2004·Granted Sep 5, 2006·81 cites·20 claims
- 0389US8675346B2Mesoporous nanocrystalline film architecture for capacitive storage devicesDUNN BRUCE S·Filed 2011·Granted Mar 18, 2014·11 cites·14 claims
- 0487US6180454B1Method for forming flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Jan 30, 2001·62 cites·20 claims
- 0581US2024331955A1Mesoporous nanocrystalline film architecture for capacitive storage devicesUNIV CALIFORNIA·Filed 2024·Application pending·0 cites
- 0680US6057193AElimination of poly cap for easy poly1 contact for NAND productADVANCED MICRO DEVICES INC·Filed 1998·Granted May 2, 2000·36 cites·9 claims
- 0779US10741337B2Mesoporous nanocrystalline film architecture for capacitive storage devicesUNIV CALIFORNIA·Filed 2018·Granted Aug 11, 2020·1 cites·3 claims
- 0879US9653219B2Mesoporous nanocrystalline film architecture for capacitive storage devicesUNIV CALIFORNIA·Filed 2014·Granted May 16, 2017·2 cites·4 claims
- 0972US6797650B1Flash memory devices with oxynitride dielectric as the charge storage mediaADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 28, 2004·14 cites·22 claims
- 1071US11978591B2Mesoporous nanocrystalline film architecture for capacitive storage devicesUNIV CALIFORNIA·Filed 2020·Granted May 7, 2024·0 cites·4 claims
- 1169US6784061B1Process to improve the Vss line formation for high density flash memory and related structure associated therewithADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 31, 2004·14 cites·25 claims
- 1269US6362049B1High yield performance semiconductor process flow for NAND flash memory productsADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 26, 2002·27 cites·62 claims
- 1368US6924220B1Self-aligned gate formation using polysilicon polish with peripheral protective layerADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 2, 2005·12 cites·13 claims
- 1466US6717850B1Efficient method to detect process induced defects in the gate stack of flash memory devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 6, 2004·14 cites·22 claims
- 1565US6380029B1Method of forming ono stacked films and DCS tungsten silicide gate to improve polycide gate performance for flash memory devicesADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 30, 2002·23 cites·20 claims
- 1663US6777957B1Test structure to measure interlayer dielectric effects and breakdown and detect metal defects in flash memoriesADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 17, 2004·8 cites·17 claims
- 1762US6764920B1Method for reducing shallow trench isolation edge thinning on tunnel oxides using partial nitride strip and small bird's beak formation for high performance flash memory devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 20, 2004·10 cites·22 claims
- 1862US6355522B1Effect of doped amorphous Si thickness on better poly 1 contact resistance performance for nand type flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 12, 2002·21 cites·28 claims
- 1961US6590260B1Memory device having improved programmabilityADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 8, 2003·9 cites·7 claims
- 2061US6410458B1Method and system for eliminating voids in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 25, 2002·9 cites·8 claims
- 2159US6734080B1Semiconductor isolation material deposition system and methodADVANCED MICRO DEVICES INC·Filed 2002·Granted May 11, 2004·8 cites·20 claims
- 2257US7137085B1Wafer level global bitmap characterization in integrated circuit technology developmentADVANCED MICRO DEVICES INC·Filed 2004·Granted Nov 14, 2006·8 cites·20 claims
- 2356US6376309B2Method for reduced gate aspect ratio to improve gap-fill after spacer etchADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 23, 2002·6 cites·11 claims
- 2454US6825083B1Method for reducing shallow trench isolation edge thinning on thin gate oxides to improve peripheral transistor reliability and performance for high performance flash memory devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 30, 2004·5 cites·22 claims
- 2554US6365945B1Submicron semiconductor device having a self-aligned channel stop region and a method for fabricating the semiconductor device using a trim and etchADVANCE MICRO DEVICES INC·Filed 2000·Granted Apr 2, 2002·6 cites·3 claims
- 2652US6312991B1Elimination of poly cap easy poly 1 contact for NAND productADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 6, 2001·4 cites·13 claims
- 2752US6072191AInterlevel dielectric thickness monitor for complex semiconductor chipsADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 6, 2000·15 cites·7 claims
- 2851US6331954B1Determination of misalignment for floating gates near a gate stack bending point in array of flash memory cellsADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 18, 2001·7 cites·22 claims
- 2950US6410949B2Flash memory device with monitor structure for monitoring second gate over-etchADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 25, 2002·2 cites·1 claims
- 3049US6350627B1Interlevel dielectric thickness monitor for complex semiconductor chipsADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 26, 2002·2 cites·7 claims
- 3148US6445051B1Method and system for providing contacts with greater tolerance for misalignment in a flash memoryADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 3, 2002·3 cites·9 claims
- 3247US6423612B1Method of fabricating a shallow trench isolation structure with reduced topographyADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 23, 2002·2 cites·5 claims
- 3346US7020022B1Method of reference cell design for optimized memory circuit yieldADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 28, 2006·4 cites·27 claims
- 3446US6063668APoly I spacer manufacturing process to eliminate polystringers in high density nand-type flash memory devicesADVANCED MICRO DEVICES INC·Filed 1997·Granted May 16, 2000·12 cites·31 claims
- 3545US6211058B1Semiconductor device with multiple contact sizesADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 3, 2001·10 cites·3 claims
- 3644US6420240B1Method for reducing the step height of shallow trench isolation structuresADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 16, 2002·1 cites·10 claims
- 3744US6066873AMethod and apparatus for preventing P1 punchthroughADVANCED MICRO DEVICES INC·Filed 1999·Granted May 23, 2000·9 cites·4 claims
- 3839US7099789B1Characterizing distribution signatures in integrated circuit technologyADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 29, 2006·1 cites·22 claims
- 3938US6281078B1Manufacturing process to eliminate ONO fence material in high density NAND-type flash memory devicesADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 28, 2001·6 cites·24 claims
- 4038US6140246AIn-situ P doped amorphous silicon by NH3 to form oxidation resistant and finer grain floating gatesADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 31, 2000·7 cites·22 claims
- 4138US5994780ASemiconductor device with multiple contact sizesADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 30, 1999·6 cites·4 claims
- 4236US6177312B1Method for removing contaminate nitrogen from the peripheral gate region of a non-volatile memory device during production of such deviceADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 23, 2001·5 cites·10 claims
- 4336US2001006847A1Method for contact size control for nand technologyADVANCED MICRO DEVICES INC·Filed 2001·Application pending·0 cites
- 4434US6323047B1Method for monitoring second gate over-etch in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 27, 2001·3 cites·9 claims
- 4532US6300658B1Method for reduced gate aspect ration to improve gap-fill after spacer etchADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 9, 2001·2 cites·2 claims
- 4631US6177316B1Post barrier metal contact implantation to minimize out diffusion for NAND deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jan 23, 2001·1 cites·18 claims
- 4729US5972749AMethod for preventing P1 punchthroughADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 26, 1999·0 cites·12 claims
- 4828US6017786AMethod for forming a low barrier height oxide layer on a silicon substrateADVANCED MICRO DEVICES INC·Filed 1997·Granted Jan 25, 2000·1 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →