Inventor · disambiguated record
Josef Willer
Also filed as: WILLER JOSEF
112 granted patents·20 pending applications·2,834 citations·filing 1987–2009
99Inventor score
Files withINFINEON TECHNOLOGIES AG62SIEMENS AG28QIMONDA AG14INFINEON TECHNOLOGIES FLASH GM6WILLER JOSEF6
Top patents by PatentIndex Score
132 records- 0199US6180979B1Memory cell arrangement with vertical MOS transistors and the production process thereofSIEMENS AG·Filed 1997·Granted Jan 30, 2001·534 cites·3 claims
- 0298US7341904B2Capacitorless 1-transistor DRAM cell and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2006·Granted Mar 11, 2008·132 cites·19 claims
- 0397US7772580B2Integrated circuit having a cell with a resistivity changing layerQIMONDA AG·Filed 2007·Granted Aug 10, 2010·64 cites·30 claims
- 0497US5994746AMemory cell configuration and method for its fabricationSIEMENS AG·Filed 1999·Granted Nov 30, 1999·191 cites·13 claims
- 0596US6686242B2Method for producing metallic bit lines for memory cell arrays, method for producing memory cell arrays and memory cell arrayINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 3, 2004·112 cites·13 claims
- 0695US6734063B2Non-volatile memory cell and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 11, 2004·77 cites·16 claims
- 0794US7790516B2Method of manufacturing at least one semiconductor component and memory cellsQIMONDA AG·Filed 2006·Granted Sep 7, 2010·29 cites·39 claims
- 0894US6777725B2NROM memory circuit with recessed bitlineINGENTIX GMBH & CO KG·Filed 2002·Granted Aug 17, 2004·109 cites·40 claims
- 0994US6548861B2Memory cell, memory cell arrangement and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 15, 2003·76 cites·10 claims
- 1093US7365382B2Semiconductor memory having charge trapping memory cells and fabrication method thereofINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 29, 2008·32 cites·18 claims
- 1193US6674132B2Memory cell and production methodINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 6, 2004·58 cites·14 claims
- 1292US6673677B2Method for manufacturing a multi-bit memory cellINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 6, 2004·55 cites·3 claims
- 1392US5494832AMethod for manufacturing a solar cell from a substrate waferSIEMENS AG·Filed 1994·Granted Feb 27, 1996·102 cites·17 claims
- 1491US6794249B2Method for fabricating a memory cellINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 21, 2004·54 cites·8 claims
- 1591US6583632B2Method of determining very small capacitancesMICRONAS GMBH·Filed 2001·Granted Jun 24, 2003·99 cites·8 claims
- 1691US6191459B1Electrically programmable memory cell array, using charge carrier traps and insulation trenchesINFINEON TECHNOLOGIES AG·Filed 1997·Granted Feb 20, 2001·103 cites·6 claims
- 1788US6972226B2Charge-trapping memory cell array and method for productionINFINEON TECHNOLOGIES AG·Filed 2004·Granted Dec 6, 2005·39 cites·17 claims
- 1887US6118159AElectrically programmable memory cell configurationSIEMENS AG·Filed 1999·Granted Sep 12, 2000·66 cites·3 claims
- 1986US7280392B2Integrated memory device and method for operating the sameINFINEON TECHNOLOGIES AG·Filed 2006·Granted Oct 9, 2007·11 cites·29 claims
- 2086US6316315B1Method for fabricating a memory cell having a MOS transistorINFINEON TECHNOLOGIES AG·Filed 2000·Granted Nov 13, 2001·39 cites·6 claims
- 2185US7875516B2Integrated circuit including a first gate stack and a second gate stack and a method of manufacturingQIMONDA AG·Filed 2007·Granted Jan 25, 2011·12 cites·19 claims
- 2284US7119395B2Memory cell with nanocrystals or nanodotsINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 10, 2006·34 cites·7 claims
- 2384US7087950B2Flash memory cell, flash memory device and manufacturing method thereofINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 8, 2006·36 cites·31 claims
- 2483US6309930B1SRAM cell arrangement and method for manufacturing sameSIEMENS AG·Filed 2000·Granted Oct 30, 2001·24 cites·5 claims
- 2581US7034336B2Capacitorless 1-transistor DRAM cell and fabrication methodINFINEON TECHNOLOGIES FLASH GM·Filed 2004·Granted Apr 25, 2006·24 cites·6 claims
- 2679US6576948B2Integrated circuit configuration and method for manufacturing itINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 10, 2003·20 cites·9 claims
- 2778US7049651B2Charge-trapping memory device including high permittivity stripsINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 23, 2006·20 cites·10 claims
- 2877US7940575B2Memory device and method providing logic connections for data transferQIMONDA AG·Filed 2008·Granted May 10, 2011·9 cites·15 claims
- 2977US7184291B2Semiconductor memory having charge trapping memory cells and fabrication methodINFINEON TECHNOLOGIES FLASH GM·Filed 2005·Granted Feb 27, 2007·7 cites·20 claims
- 3077US6800898B2Integrated circuit configuration and method of fabricating a dram structure with buried bit lines or trench capacitorsINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 5, 2004·23 cites·18 claims
- 3176US7838921B2Memory cell arrangementsQIMONDA AG·Filed 2006·Granted Nov 23, 2010·5 cites·26 claims
- 3276US6448600B1DRAM cell configuration and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 10, 2002·16 cites·20 claims
- 3375US7778073B2Integrated circuit having NAND memory cell stringsQIMONDA AG·Filed 2007·Granted Aug 17, 2010·9 cites·18 claims
- 3475US7312491B2Charge trapping semiconductor memory element with improved trapping dielectricINFINEON TECHNOLOGIES AG·Filed 2006·Granted Dec 25, 2007·6 cites·12 claims
- 3574US7184317B2Method for programming multi-bit charge-trapping memory cell arraysINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 27, 2007·9 cites·20 claims
- 3674US6040995AMethod of operating a storage cell arrangementSIEMENS AG·Filed 1997·Granted Mar 21, 2000·35 cites·4 claims
- 3774US4889827AMethod for the manufacture of a MESFET comprising self aligned gateSIEMENS AG·Filed 1988·Granted Dec 26, 1989·31 cites·20 claims
- 3873US6639269B1Electrically programmable memory cell configuration and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2000·Granted Oct 28, 2003·19 cites·17 claims
- 3972US6888753B2Memory cell array comprising individually addressable memory cells and method of making the sameINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 3, 2005·16 cites·11 claims
- 4072US6521935B2Mos transistor and dram cell configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 18, 2003·17 cites·8 claims
- 4172US4774206AMethod for the manufacture of a self-aligned metal contactSIEMENS AG·Filed 1987·Granted Sep 27, 1988·28 cites·7 claims
- 4271US7272040B2Multi-bit virtual-ground NAND memory deviceINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 18, 2007·8 cites·21 claims
- 4371US7154138B2Transistor-arrangement, method for operating a transistor arrangement as a data storage element and method for producing a transistor-arrangementINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 26, 2006·16 cites·6 claims
- 4471US6627940B1Memory cell arrangementINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 30, 2003·13 cites·6 claims
- 4570US7741630B2Resistive memory element and method of fabricationQIMONDA AG·Filed 2008·Granted Jun 22, 2010·3 cites·14 claims
- 4670US7256098B2Method of manufacturing a memory deviceINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 14, 2007·3 cites·18 claims
- 4770US7250651B2Semiconductor memory device comprising memory cells with floating gate electrode and method of productionINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jul 31, 2007·16 cites·24 claims
- 4869US7323388B2SONOS memory cells and arrays and method of forming the sameINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 29, 2008·4 cites·20 claims
- 4969US6661053B2Memory cell with trench transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 9, 2003·17 cites·18 claims
- 5068US7375387B2Method for producing semiconductor memory devices and integrated memory deviceINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 20, 2008·3 cites·19 claims
Showing the top 50 of 132 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →