Inventor · disambiguated record
Jr-Hung Li
Also filed as: LI JR-HUNG
64 granted patents·28 pending applications·187 citations·filing 2007–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD87TAIWAN SEMICONDUCTOR MFG2LIN YI HUNG1LU CHANG-SHEN1LU JHI-CHERNG1
Top patents by PatentIndex Score
92 records- 0198US11705332B2Photoresist layer surface treatment, cap layer, and method of forming photoresist patternTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·9 cites·20 claims
- 0298US11437277B2Forming isolation regions for separating fins and gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·5 cites·19 claims
- 0397US11289417B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·5 cites·14 claims
- 0497US11271083B2Semiconductor device, FinFET device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 8, 2022·6 cites·20 claims
- 0597US7868317B2MOS devices with partial stressor channelTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 11, 2011·51 cites·24 claims
- 0697US7554110B2MOS devices with partial stressor channelTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 30, 2009·48 cites·29 claims
- 0796US12027423B2Forming isolation regions for separating fins and gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
- 0895US12237419B2Gate structures in transistor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·2 cites·20 claims
- 0995US12057315B2Photoresist layer surface treatment, cap layer, and method of forming photoresist patternTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·2 cites·20 claims
- 1095US11822237B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 21, 2023·3 cites·20 claims
- 1195US10504990B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·9 cites·20 claims
- 1294US11726405B2Photoresist for semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 1394US11164948B2Field-effect transistor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 2, 2021·6 cites·20 claims
- 1493US12159787B2Method of manufacturing a semiconductor device and pattern formation methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 3, 2024·2 cites·20 claims
- 1593US12135501B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·1 cites·20 claims
- 1693US12002675B2Photoresist layer outgassing preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·2 cites·20 claims
- 1793US11894435B2Contact plug structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
- 1893US11742399B2Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·2 cites·20 claims
- 1992US10943818B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·6 cites·20 claims
- 2090US2025341775A1Photoresist for semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2188US10475788B2Fin field effect transistor (FinFET) device structure with capping layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·4 cites·20 claims
- 2286US12374548B2Photoresist layer outgassing preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 2386US12044966B2Photoresist for semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
- 2486US9517539B2Wafer susceptor with improved thermal characteristicsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 13, 2016·5 cites·20 claims
- 2586US2025344437A1Contact plug structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2685US12368098B2Methods of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 2785US2025343090A1HIGHLY PROTECTIVE WAFER EDGE SIDEWALLl PROTECTION LAYERTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2885US2024377732A1Photoresist for semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2985US2025309103A1Methods of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3085US2024385516A1Photoresist for semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3184US12324185B2Semiconductor device, FinFET device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 3284US11239309B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 1, 2022·2 cites·20 claims
- 3384US2025323038A1Photoresist layer outgassing preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3483US2025267890A1Semiconductor device, finfet device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3581US12463034B2Photoresist layer surface treatment, cap layer, and method of forming photoresist patternTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 3681US12255240B2Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 3781US10483168B2Low-k gate spacer and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·2 cites·20 claims
- 3881US2025112102A1HIGHLY PROTECTIVE WAFER EDGE SIDEWALLl PROTECTION LAYERTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3981US2025357118A1Photoresist and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4079US2025343051A1Method for forming a semiconductor device having a gate mask composing of a semiconductor layer over a dielectric layer formed on gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4178US11600530B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 7, 2023·2 cites·20 claims
- 4278US2024304496A1Forming Isolation Regions for Separating Fins and Gate StacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4377US2025147417A1Method of manufacturing a semiconductor device and pattern formation methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4477US2025336725A1Transistor contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4576US11973027B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·14 claims
- 4676US10797050B2Fin field effect transistor (finFET) device structure with capping layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·1 cites·20 claims
- 4776US2025311281A1Dielectric layers for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4875US12218241B2Semiconductor device structure with etch stop layer for reducing RC delayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 4975US12153346B2Photoresist for semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 26, 2024·0 cites·20 claims
- 5075US11984485B2Semiconductor device, FinFET device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·0 cites·20 claims
Showing the top 50 of 92 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →