Inventor · disambiguated record
Junjing Bao
Also filed as: BAO JUNJING
82 granted patents·43 pending applications·292 citations·filing 2010–2024
99Inventor score
Top patents by PatentIndex Score
125 records- 0197US9793164B2Self-aligned metal cut and via for back-end-of-line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devicesQUALCOMM INC·Filed 2015·Granted Oct 17, 2017·23 cites·19 claims
- 0295US10177031B2Subtractive etch interconnectsIBM·Filed 2014·Granted Jan 8, 2019·22 cites·10 claims
- 0395US9799560B2Self-aligned structureQUALCOMM INC·Filed 2015·Granted Oct 24, 2017·13 cites·40 claims
- 0494US10651122B1Integrated circuit (IC) interconnect structure having a metal layer with asymmetric metal line-dielectric structures supporting self-aligned vertical interconnect accesses (VIAS)QUALCOMM INC·Filed 2019·Granted May 12, 2020·12 cites·30 claims
- 0594US9171801B2E-fuse with hybrid metallizationIBM·Filed 2014·Granted Oct 27, 2015·19 cites·16 claims
- 0694US8129269B1Method of improving mechanical properties of semiconductor interconnects with nanoparticlesBAO JUNJING·Filed 2010·Granted Mar 6, 2012·15 cites·14 claims
- 0793US9685404B2Back-end electrically programmable fuseBAO JUNJING·Filed 2012·Granted Jun 20, 2017·14 cites·11 claims
- 0893US9543248B2Integrated circuit devices and methodsQUALCOMM INC·Filed 2015·Granted Jan 10, 2017·8 cites·20 claims
- 0992US9953979B2Contact wrap around structureQUALCOMM INC·Filed 2015·Granted Apr 24, 2018·8 cites·14 claims
- 1092US9536830B2High performance refractory metal / copper interconnects to eliminate electromigrationIBM·Filed 2013·Granted Jan 3, 2017·14 cites·12 claims
- 1192US9412654B1Graphene sacrificial deposition layer on beol copper liner-seed for mitigating queue-time issues between liner and plating stepIBM·Filed 2015·Granted Aug 9, 2016·9 cites·20 claims
- 1291US9059170B2Electronic fuse having a damaged regionIBM·Filed 2013·Granted Jun 16, 2015·12 cites·24 claims
- 1388US9721891B2Integrated circuit devices and methodsQUALCOMM INC·Filed 2016·Granted Aug 1, 2017·3 cites·20 claims
- 1488US9293412B2Graphene and metal interconnects with reduced contact resistanceIBM·Filed 2014·Granted Mar 22, 2016·9 cites·18 claims
- 1588US8916461B2Electronic fuse vias in interconnect structuresIBM·Filed 2012·Granted Dec 23, 2014·8 cites·9 claims
- 1688US8736020B2Electronic anti-fuseBAO JUNJING·Filed 2012·Granted May 27, 2014·10 cites·18 claims
- 1787US10062763B2Method and apparatus for selectively forming nitride caps on metal gateQUALCOMM INC·Filed 2015·Granted Aug 28, 2018·6 cites·21 claims
- 1887US9455186B2Selective local metal cap layer formation for improved electromigration behaviorIBM·Filed 2015·Granted Sep 27, 2016·4 cites·1 claims
- 1987US9324634B2Semiconductor interconnect structure having a graphene-based barrier metal layerBAO JUNJING·Filed 2011·Granted Apr 26, 2016·9 cites·10 claims
- 2086US9064871B2Vertical electronic fuseIBM·Filed 2014·Granted Jun 23, 2015·6 cites·15 claims
- 2185US9202743B2Graphene and metal interconnectsIBM·Filed 2012·Granted Dec 1, 2015·7 cites·18 claims
- 2285US8962467B2Metal fuse structure for improved programming capabilityBONILLA GRISELDA·Filed 2012·Granted Feb 24, 2015·6 cites·9 claims
- 2384US10043796B2Vertically stacked nanowire field effect transistorsQUALCOMM INC·Filed 2016·Granted Aug 7, 2018·4 cites·33 claims
- 2484US9324635B2Semiconductor interconnect structure having a graphene-based barrier metal layerIBM·Filed 2014·Granted Apr 26, 2016·6 cites·10 claims
- 2583US10833017B2Contact for semiconductor deviceQUALCOMM INC·Filed 2016·Granted Nov 10, 2020·4 cites·12 claims
- 2681US11380685B2Semiconductor device with superlattice finQUALCOMM INC·Filed 2020·Granted Jul 5, 2022·1 cites·20 claims
- 2781US9865798B2Electrode structure for resistive memory deviceQUALCOMM INC·Filed 2015·Granted Jan 9, 2018·5 cites·30 claims
- 2880US11239307B2Metal-oxide-metal capacitor from subtractive back-end-of-line schemeQUALCOMM INC·Filed 2020·Granted Feb 1, 2022·1 cites·20 claims
- 2980US9559051B1Method for manufacturing in a semiconductor device a low resistance via without a bottom linerGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 31, 2017·3 cites·20 claims
- 3079US11404373B2Hybrid low resistance metal linesQUALCOMM INC·Filed 2019·Granted Aug 2, 2022·2 cites·30 claims
- 3179US9385038B2Selective local metal cap layer formation for improved electromigration behaviorIBM·Filed 2015·Granted Jul 5, 2016·2 cites·6 claims
- 3278US9536842B2Structure with air gap crack stopGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 3, 2017·4 cites·18 claims
- 3377US9425144B2Metal fuse structure for improved programming capabilityGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 23, 2016·3 cites·15 claims
- 3476US9893011B2Back-end electrically programmable fuseIBM·Filed 2015·Granted Feb 13, 2018·2 cites·4 claims
- 3573US10354955B2Graphene as interlayer dielectricQUALCOMM INC·Filed 2017·Granted Jul 16, 2019·1 cites·17 claims
- 3673US9034664B2Method to resolve hollow metal defects in interconnectsBONILLA GRISELDA·Filed 2012·Granted May 19, 2015·3 cites·8 claims
- 3773US2024203866A1INTEGRATED CIRCUITS (ICs) EMPLOYING DIRECTLY COUPLED METAL LINES BETWEEN VERTICALLY-ADJACENT INTERCONNECT LAYERS FOR REDUCED COUPLING RESISTANCE, AND RELATED METHODSQUALCOMM INC·Filed 2024·Application pending·0 cites
- 3872US10566413B2MIM capacitor containing negative capacitance materialQUALCOMM INC·Filed 2017·Granted Feb 18, 2020·1 cites·12 claims
- 3972US9324655B2Modified via bottom for beol via efuseIBM·Filed 2014·Granted Apr 26, 2016·2 cites·18 claims
- 4070US10636737B2Structure and method of metal wraparound for low via resistanceQUALCOMM INC·Filed 2018·Granted Apr 28, 2020·1 cites·5 claims
- 4170US9431346B2Graphene-metal E-fuseGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 30, 2016·2 cites·13 claims
- 4270US9337082B2Metal lines having etch-bias independent heightGLOBALFOUNDRIES INC·Filed 2013·Granted May 10, 2016·2 cites·9 claims
- 4370US8841208B2Method of forming vertical electronic fuse interconnect structures including a conductive capBAO JUNJING·Filed 2012·Granted Sep 23, 2014·2 cites·10 claims
- 4467US9076847B2Selective local metal cap layer formation for improved electromigration behaviorIBM·Filed 2013·Granted Jul 7, 2015·1 cites·6 claims
- 4564US11942414B2Integrated circuits (ICs) employing directly coupled metal lines between vertically-adjacent interconnect layers for reduced coupling resistance, and related methodsQUALCOMM INC·Filed 2021·Granted Mar 26, 2024·0 cites·15 claims
- 4664US8921167B2Modified via bottom for BEOL via efuseIBM·Filed 2013·Granted Dec 30, 2014·1 cites·7 claims
- 4763US12506035B2Self-aligned source/drain contact structure and method of manufacturing the sameQUALCOMM INC·Filed 2023·Granted Dec 23, 2025·0 cites·30 claims
- 4863US9257391B2Hybrid graphene-metal interconnect structuresGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 9, 2016·1 cites·7 claims
- 4962US12457783B2Selective contact on source and drainQUALCOMM INC·Filed 2023·Granted Oct 28, 2025·0 cites·29 claims
- 5062US10347821B2Electrode structure for resistive memory deviceQUALCOMM INC·Filed 2017·Granted Jul 9, 2019·1 cites·30 claims
Showing the top 50 of 125 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →