Inventor · disambiguated record
Jung-Piao Chiu
Also filed as: CHIU JUNG-PIAO
27 granted patents·13 pending applications·15 citations·filing 2014–2025
93Inventor score
Top patents by PatentIndex Score
40 records- 0193US11837611B2Data storage element and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 5, 2023·2 cites·20 claims
- 0292US11342380B2Memory devices with selector layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
- 0390US10062782B2Method of manufacturing a semiconductor device with multilayered channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·5 cites·20 claims
- 0488US12336192B2Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 0587US12232331B2Memory devices with selector layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 0687US2025366382A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0786US10038080B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·4 cites·20 claims
- 0885US11647682B2Memory array, semiconductor chip and manufacturing method of memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·1 cites·20 claims
- 0983US12389694B2Data storage element and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 1083US11158742B2Method of manufacturing a semiconductor device with multilayered channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 26, 2021·1 cites·20 claims
- 1182US12161055B2Memory array, semiconductor chip and manufacturing method of memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 1282US12041790B2Semiconductor device, memory cell and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 1382US2025057057A1Memory array, semiconductor chip and manufacturing method of memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1481US2025311453A1Data storage element and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1580US12217817B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1680US2025124955A1Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1779US11805662B2Memory devices with selector layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·0 cites·20 claims
- 1879US2024260279A1Memory array with asymmetric bit-line architectureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1978US11963369B2Memory array with asymmetric bit-line architectureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 2078US2024373764A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2176US2024381796A1Resistive memory device with enhanced local electric field and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2276US2025159903A1Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2372US12120968B2Semiconductor device, memory cell including connecting structure having base portion and pillar portion, and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 15, 2024·0 cites·20 claims
- 2471US11763857B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·0 cites·20 claims
- 2571US11594576B2Semiconductor device, memory cell and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·0 cites·20 claims
- 2669US2025374506A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2765US2023157187A1Resistive memory device with enhanced local electric field and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2864US11482571B2Memory array with asymmetric bit-line architectureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 25, 2022·0 cites·20 claims
- 2962US2025374507A1Semiconductor structure with implanted source/drain structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3060US10727344B2Method of manufacturing a semiconductor device with multilayered channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·0 cites·20 claims
- 3158US12507600B2Phase change memory device wherein first and second electrodes penetrate through dielectric and phase change layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
- 3258US11605779B2Memory cell, method of forming the same, and semiconductor dieTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 3358US9515071B2Asymmetric source/drain depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 6, 2016·0 cites·20 claims
- 3457US10700205B2Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 30, 2020·0 cites·20 claims
- 3556US9349652B1Method of forming semiconductor device with different threshold voltagesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 24, 2016·0 cites·20 claims
- 3654US9659826B2Asymmetric source/drain depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·0 cites·20 claims
- 3754US2024006304A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3853US11737287B2Memory device, method of forming the same, and semiconductor device having the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 3953US10283639B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·0 cites·20 claims
- 4051US2023363177A1Feram device and method of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →