Inventor · disambiguated record
Julien Frougier
Also filed as: FROUGIER JULIEN
223 granted patents·174 pending applications·1,506 citations·filing 2017–2024
99Inventor score
Files withIBM333GLOBALFOUNDRIES INC42GLOBALFOUNDRIES US INC18ADEIA SEMICONDUCTOR SOLUTIONS LLC2TESSERA INC1
Top patents by PatentIndex Score
397 records- 0199US11251362B2Stacked spin-orbit-torque magnetoresistive random-access memoryIBM·Filed 2020·Granted Feb 15, 2022·9 cites·18 claims
- 0299US10665669B1Insulative structure with diffusion break integral with isolation layer and methods to form sameGLOBALFOUNDRIES INC·Filed 2019·Granted May 26, 2020·39 cites·20 claims
- 0399US10510620B1Work function metal patterning for N-P space between active nanostructuresGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 17, 2019·126 cites·6 claims
- 0499US10388732B1Nanosheet field-effect transistors including a two-dimensional semiconducting materialGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 20, 2019·88 cites·20 claims
- 0599US10332803B1Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of formingGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 25, 2019·83 cites·20 claims
- 0699US10256158B1Insulated epitaxial structures in nanosheet complementary field effect transistorsGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 9, 2019·68 cites·20 claims
- 0799US10014390B1Inner spacer formation for nanosheet field-effect transistors with tall suspensionsGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 3, 2018·74 cites·16 claims
- 0899US9991352B1Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 5, 2018·90 cites·20 claims
- 0999US9947804B1Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structureGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 17, 2018·154 cites·14 claims
- 1098US12154971B2Forming nanosheet transistor using sacrificial spacer and inner spacersADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2023·Granted Nov 26, 2024·2 cites·20 claims
- 1198US11757036B2Moon-shaped bottom spacer for vertical transport field effect transistor (VTFET) devicesIBM·Filed 2021·Granted Sep 12, 2023·4 cites·14 claims
- 1298US10903317B1Gate-all-around field effect transistors with robust inner spacers and methodsGLOBALFOUNDRIES US INC·Filed 2019·Granted Jan 26, 2021·24 cites·20 claims
- 1398US10840146B1Structures and SRAM bit cells with a buried cross-couple interconnectGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 17, 2020·62 cites·20 claims
- 1498US10573755B1Nanosheet FET with box isolation on substrateIBM·Filed 2018·Granted Feb 25, 2020·32 cites·19 claims
- 1598US10529826B1Forming self-aligned gate and source/drain contacts using sacrificial gate cap spacer and resulting devicesGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 7, 2020·22 cites·20 claims
- 1698US10510622B1Vertically stacked complementary-FET device with independent gate controlGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 17, 2019·46 cites·20 claims
- 1798US10424651B2Forming nanosheet transistor using sacrificial spacer and inner spacersIBM·Filed 2018·Granted Sep 24, 2019·16 cites·13 claims
- 1898US10276442B1Wrap-around contacts formed with multiple silicide layersGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 30, 2019·29 cites·20 claims
- 1998US10236292B1Complementary FETs with wrap around contacts and methods of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 19, 2019·33 cites·9 claims
- 2098US10192867B1Complementary FETs with wrap around contacts and method of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 29, 2019·134 cites·6 claims
- 2197US10651291B2Inner spacer formation in a nanosheet field-effect transistorGLOBALFOUNDRIES INC·Filed 2017·Granted May 12, 2020·22 cites·19 claims
- 2297US10580692B1Integration of air spacer with self-aligned contact in transistorIBM·Filed 2018·Granted Mar 3, 2020·16 cites·20 claims
- 2397US10269983B2Stacked nanosheet field-effect transistor with air gap spacersGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 23, 2019·20 cites·20 claims
- 2497US10236218B1Methods, apparatus and system for forming wrap-around contact with dual silicideGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 19, 2019·19 cites·15 claims
- 2596US12154985B2Moon-shaped bottom spacer for vertical transport field effect transistor (VTFET) devicesIBM·Filed 2023·Granted Nov 26, 2024·2 cites·16 claims
- 2696US11894436B2Gate-all-around monolithic stacked field effect transistors having multiple threshold voltagesIBM·Filed 2021·Granted Feb 6, 2024·3 cites·14 claims
- 2796US11688626B2Nanosheet transistor with self-aligned dielectric pillarIBM·Filed 2021·Granted Jun 27, 2023·2 cites·9 claims
- 2896US10903315B2Formation of dielectric layer as etch-stop for source and drain epitaxy disconnectionIBM·Filed 2018·Granted Jan 26, 2021·12 cites·13 claims
- 2996US10818674B2Structures and SRAM bit cells integrating complementary field-effect transistorsGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 27, 2020·12 cites·15 claims
- 3096US10170520B1Negative-capacitance steep-switch field effect transistor with integrated bi-stable resistive systemIBM·Filed 2018·Granted Jan 1, 2019·19 cites·20 claims
- 3196US10164041B1Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed therebyGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·14 cites·13 claims
- 3295US12328859B2Stacked FET SRAMIBM·Filed 2022·Granted Jun 10, 2025·2 cites·20 claims
- 3395US12317514B2Resistive random-access memory structures with stacked transistorsIBM·Filed 2022·Granted May 27, 2025·1 cites·20 claims
- 3495US12046643B2Semiconductor structures with power rail disposed under active gateIBM·Filed 2021·Granted Jul 23, 2024·2 cites·25 claims
- 3595US11848384B2Semiconductor device with airgap spacer formation from backside of waferIBM·Filed 2021·Granted Dec 19, 2023·2 cites·20 claims
- 3695US11791342B2Varactor integrated with complementary metal-oxide semiconductor devicesIBM·Filed 2021·Granted Oct 17, 2023·2 cites·7 claims
- 3795US11309319B2Structures and SRAM bit cells integrating complementary field-effect transistorsGLOBALFOUNDRIES US INC·Filed 2020·Granted Apr 19, 2022·3 cites·20 claims
- 3895US11295988B2Semiconductor FET device with bottom isolation and high-κ firstIBM·Filed 2020·Granted Apr 5, 2022·3 cites·20 claims
- 3995US11201152B2Method, apparatus, and system for fin-over-nanosheet complementary field-effect-transistorGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 14, 2021·12 cites·5 claims
- 4095US10818803B1Fin-type field-effect transistors including a two-dimensional materialGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 27, 2020·13 cites·20 claims
- 4195US10418484B1Vertical field effect transistors incorporating U-shaped semiconductor bodies and methodsGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 17, 2019·12 cites·20 claims
- 4294US12272648B2Semiconductor device having a backside power railIBM·Filed 2022·Granted Apr 8, 2025·2 cites·19 claims
- 4394US12002850B2Nanosheet-based semiconductor structure with dielectric pillarIBM·Filed 2021·Granted Jun 4, 2024·2 cites·20 claims
- 4494US12002808B2Dual dielectric pillar fork sheet deviceIBM·Filed 2021·Granted Jun 4, 2024·2 cites·20 claims
- 4594US11876114B2Airgap gate spacerIBM·Filed 2021·Granted Jan 16, 2024·2 cites·17 claims
- 4694US11195746B2Nanosheet transistor with self-aligned dielectric pillarIBM·Filed 2020·Granted Dec 7, 2021·3 cites·3 claims
- 4794US11171044B1Planarization controllability for interconnect structuresIBM·Filed 2020·Granted Nov 9, 2021·3 cites·20 claims
- 4894US10886378B2Method of forming air-gap spacers and gate contact over active region and the resulting deviceGLOBALFOUNDRIES INC·Filed 2019·Granted Jan 5, 2021·8 cites·18 claims
- 4994US10692991B2Gate-all-around field effect transistors with air-gap inner spacers and methodsGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 23, 2020·9 cites·7 claims
- 5093US10784171B2Vertically stacked complementary-FET device with independent gate controlGLOBALFOUNDRIES INC·Filed 2019·Granted Sep 22, 2020·7 cites·19 claims
Showing the top 50 of 397 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →