Inventor · disambiguated record
Juntao Li
Also filed as: LI JUNTAO
555 granted patents·63 pending applications·3,135 citations·filing 2012–2024
99Inventor score
Top patents by PatentIndex Score
618 records- 0199US11049953B2Nanosheet transistorTESSERA INC·Filed 2020·Granted Jun 29, 2021·6 cites·21 claims
- 0299US10741456B2Vertically stacked nanosheet CMOS transistorIBM·Filed 2018·Granted Aug 11, 2020·27 cites·15 claims
- 0399US10418277B2Air gap spacer formation for nano-scale semiconductor devicesIBM·Filed 2018·Granted Sep 17, 2019·159 cites·20 claims
- 0499US10388732B1Nanosheet field-effect transistors including a two-dimensional semiconducting materialGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 20, 2019·88 cites·20 claims
- 0599US10263100B1Buffer regions for blocking unwanted diffusion in nanosheet transistorsIBM·Filed 2018·Granted Apr 16, 2019·145 cites·20 claims
- 0699US10229985B1Vertical field-effect transistor with uniform bottom spacerIBM·Filed 2017·Granted Mar 12, 2019·284 cites·20 claims
- 0799US9984937B1Vertical silicon/silicon-germanium transistors with multiple threshold voltagesIBM·Filed 2017·Granted May 29, 2018·26 cites·15 claims
- 0899US9892961B1Air gap spacer formation for nano-scale semiconductor devicesIBM·Filed 2016·Granted Feb 13, 2018·49 cites·13 claims
- 0999US9881998B1Stacked nanosheet field effect transistor device with substrate isolationIBM·Filed 2017·Granted Jan 30, 2018·70 cites·13 claims
- 1099US9842835B1High density nanosheet diodesIBM·Filed 2016·Granted Dec 12, 2017·315 cites·9 claims
- 1199US9837405B1Fabrication of a vertical fin field effect transistor having a consistent channel widthIBM·Filed 2016·Granted Dec 5, 2017·45 cites·5 claims
- 1299US9755073B1Fabrication of vertical field effect transistor structure with strained channelsIBM·Filed 2016·Granted Sep 5, 2017·49 cites·18 claims
- 1399US9735253B1Closely packed vertical transistors with reduced contact resistanceIBM·Filed 2016·Granted Aug 15, 2017·48 cites·15 claims
- 1499US9627511B1Vertical transistor having uniform bottom spacersIBM·Filed 2016·Granted Apr 18, 2017·52 cites·20 claims
- 1598US11637179B2Airgap vertical transistor without structural collapseIBM·Filed 2020·Granted Apr 25, 2023·4 cites·17 claims
- 1698US11211452B1Transistor having stacked source/drain regions with formation assistance regions and multi-region wrap-around source/drain contactsIBM·Filed 2020·Granted Dec 28, 2021·7 cites·19 claims
- 1798US11107731B1Self-aligned repaired top viaIBM·Filed 2020·Granted Aug 31, 2021·5 cites·20 claims
- 1898US10559566B1Reduction of multi-threshold voltage patterning damage in nanosheet device structureIBM·Filed 2018·Granted Feb 11, 2020·30 cites·16 claims
- 1998US10535733B2Method of forming a nanosheet transistorIBM·Filed 2018·Granted Jan 14, 2020·32 cites·9 claims
- 2098US10522649B2Inverse T-shaped contact structures having air gap spacersIBM·Filed 2018·Granted Dec 31, 2019·23 cites·10 claims
- 2198US10243054B1Integrating standard-gate and extended-gate nanosheet transistors on the same substrateIBM·Filed 2018·Granted Mar 26, 2019·64 cites·20 claims
- 2298US10243061B1Nanosheet transistorIBM·Filed 2017·Granted Mar 26, 2019·28 cites·13 claims
- 2398US10141403B1Integrating thin and thick gate dielectric nanosheet transistors on same chipIBM·Filed 2017·Granted Nov 27, 2018·40 cites·20 claims
- 2498US10043900B1Vertical transport Fin field effect transistors on a substrate with varying effective gate lengthsIBM·Filed 2017·Granted Aug 7, 2018·29 cites·14 claims
- 2598US9991254B1Forming horizontal bipolar junction transistor compatible with nanosheetsIBM·Filed 2017·Granted Jun 5, 2018·28 cites·20 claims
- 2698US9935014B1Nanosheet transistors having different gate dielectric thicknesses on the same chipIBM·Filed 2017·Granted Apr 3, 2018·35 cites·16 claims
- 2798US9935102B1Method and structure for improving vertical transistorIBM·Filed 2016·Granted Apr 3, 2018·28 cites·19 claims
- 2898US9818875B1Approach to minimization of strain loss in strained fin field effect transistorsIBM·Filed 2016·Granted Nov 14, 2017·35 cites·14 claims
- 2998US9799749B1Vertical transport FET devices with uniform bottom spacerIBM·Filed 2016·Granted Oct 24, 2017·30 cites·15 claims
- 3098US9768118B1Contact having self-aligned air gap spacersIBM·Filed 2016·Granted Sep 19, 2017·29 cites·10 claims
- 3198US9748245B1Multiple finFET formation with epitaxy separationIBM·Filed 2016·Granted Aug 29, 2017·28 cites·16 claims
- 3298US9614087B1Strained vertical field-effect transistor (FET) and method of forming the sameIBM·Filed 2016·Granted Apr 4, 2017·27 cites·20 claims
- 3398US9484267B1Stacked nanowire devicesIBM·Filed 2016·Granted Nov 1, 2016·35 cites·18 claims
- 3498US9391204B1Asymmetric FETIBM·Filed 2015·Granted Jul 12, 2016·33 cites·10 claims
- 3597US10930563B2Formation of stacked nanosheet semiconductor devicesIBM·Filed 2020·Granted Feb 23, 2021·4 cites·16 claims
- 3697US10504794B1Self-aligned silicide/germanide formation to reduce external resistance in a vertical field-effect transistorIBM·Filed 2018·Granted Dec 10, 2019·13 cites·15 claims
- 3797US10497796B1Vertical transistor with reduced gate length variationIBM·Filed 2018·Granted Dec 3, 2019·16 cites·18 claims
- 3897US10388569B1Formation of stacked nanosheet semiconductor devicesIBM·Filed 2018·Granted Aug 20, 2019·16 cites·10 claims
- 3997US10283565B1Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive elementIBM·Filed 2017·Granted May 7, 2019·20 cites·14 claims
- 4097US10002795B1Method and structure for forming vertical transistors with shared gates and separate gatesIBM·Filed 2017·Granted Jun 19, 2018·16 cites·14 claims
- 4197US9728621B1iFinFETIBM·Filed 2016·Granted Aug 8, 2017·23 cites·17 claims
- 4297US9716038B2Critical dimension shrink through selective metal growth on metal hardmask sidewallsIBM·Filed 2016·Granted Jul 25, 2017·12 cites·1 claims
- 4397US9653480B1Nanosheet capacitorIBM·Filed 2016·Granted May 16, 2017·16 cites·20 claims
- 4497US9647120B1Vertical FET symmetric and asymmetric source/drain formationIBM·Filed 2016·Granted May 9, 2017·21 cites·20 claims
- 4597US9601514B1Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxyIBM·Filed 2016·Granted Mar 21, 2017·14 cites·10 claims
- 4697US9276013B1Integrated formation of Si and SiGe finsIBM·Filed 2015·Granted Mar 1, 2016·21 cites·20 claims
- 4797US9219153B2Methods of forming gate structures for FinFET devices and the resulting semiconductor productsGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 22, 2015·32 cites·20 claims
- 4897US9190321B2Self-forming embedded diffusion barriersIBM·Filed 2013·Granted Nov 17, 2015·28 cites·7 claims
- 4996US12279452B2Stacked complementary transistor structure for three-dimensional integrationIBM·Filed 2021·Granted Apr 15, 2025·3 cites·20 claims
- 5096US11158544B2Vertical stacked nanosheet CMOS transistors with different work function metalsIBM·Filed 2019·Granted Oct 26, 2021·11 cites·20 claims
Showing the top 50 of 618 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →