Inventor · disambiguated record
Jung Hun Lim
Also filed as: LIM JUNG H · LIM JUNG HUN
41 granted patents·8 pending applications·86 citations·filing 2005–2024
97Inventor score
Top patents by PatentIndex Score
49 records- 0197US10465112B2Composition for etchingSOULBRAIN CO LTD·Filed 2017·Granted Nov 5, 2019·13 cites·1 claims
- 0297US9868902B2Composition for etchingSOULBRAIN CO LTD·Filed 2015·Granted Jan 16, 2018·14 cites·13 claims
- 0391US11390805B2Etching composition and method for manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 19, 2022·3 cites·20 claims
- 0491US8821752B2Etching composition and method for fabricating semiconductor device using the sameSK HYNIX INC·Filed 2012·Granted Sep 2, 2014·17 cites·17 claims
- 0590US2025026962A1Composition for etching and manufacturing method of semiconductor device using the sameSOULBRAIN CO LTD·Filed 2024·Application pending·0 cites
- 0688US10377948B2Etching composition and method for fabricating semiconductor device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 13, 2019·4 cites·19 claims
- 0787US11390807B2Composition for etching and method for manufacturing semiconductor device using sameSOULBRAIN CO LTD·Filed 2020·Granted Jul 19, 2022·1 cites·4 claims
- 0886US11149200B2Composition for etching and method for manufacturing semiconductor device using sameSOULBRAIN CO LTD·Filed 2016·Granted Oct 19, 2021·2 cites·18 claims
- 0985US11795550B2Etching composition, a method of etching a metal barrier layer and a metal layer using the same, and method of manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 24, 2023·1 cites·6 claims
- 1085US10414978B2Etching composition and method for fabricating semiconductor device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 17, 2019·3 cites·17 claims
- 1185US9530670B2Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same using an etchant composition that includes phosphoric acid, nitric acid, and an assistant oxidantSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 27, 2016·8 cites·14 claims
- 1284US11028488B2Etching composition, a method of etching a metal barrier layer and a metal layer using the same, and method of manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 8, 2021·3 cites·17 claims
- 1384US2023141924A1Composition for etching and method for manufacturing semiconductor device using sameSOULBRAIN CO LTD·Filed 2022·Application pending·0 cites
- 1484US2023136538A1Composition for etching and method for manufacturing semiconductor device using sameSOULBRAIN CO LTD·Filed 2022·Application pending·0 cites
- 1579US11142694B2Etchant composition and method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 12, 2021·2 cites·18 claims
- 1677US11380537B2Method of manufacturing a semiconductor device and a cleaning composition for an adhesive layerSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 5, 2022·2 cites·8 claims
- 1776US12163058B2Semiconductor elementSOULBRAIN CO LTD·Filed 2020·Granted Dec 10, 2024·0 cites·3 claims
- 1876US12146076B2Semiconductor elementSOULBRAIN CO LTD·Filed 2020·Granted Nov 19, 2024·0 cites·4 claims
- 1976US12012525B2Composition for etching and manufacturing method of semiconductor device using the sameSOULBRAIN CO LTD·Filed 2020·Granted Jun 18, 2024·0 cites·4 claims
- 2076US11634633B2Composition for etchingSOULBRAIN CO LTD·Filed 2020·Granted Apr 25, 2023·0 cites·8 claims
- 2176US11634632B2Composition for etchingSOULBRAIN CO LTD·Filed 2020·Granted Apr 25, 2023·0 cites·4 claims
- 2276US11634634B2Composition for etchingSOULBRAIN CO LTD·Filed 2020·Granted Apr 25, 2023·0 cites·8 claims
- 2376US11566178B2Composition for etching and method for manufacturing semiconductor device using sameSOULBRAIN CO LTD·Filed 2020·Granted Jan 31, 2023·0 cites·4 claims
- 2476US11530355B2Composition for etching and method for manufacturing semiconductor device using sameSOULBRAIN CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·3 claims
- 2576US11512226B2Composition for etching and manufacturing method of semiconductor device using the sameSOULBRAIN CO LTD·Filed 2020·Granted Nov 29, 2022·0 cites·4 claims
- 2676US11499073B2Composition for etching and manufacturing method of semiconductor device using the sameSOULBRAIN CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·6 claims
- 2776US11479720B2Composition for etching and method for manufacturing semiconductor device using sameSOULBRAIN CO LTD·Filed 2020·Granted Oct 25, 2022·0 cites·3 claims
- 2876US11466208B2Composition for etchingSOULBRAIN CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·4 claims
- 2976US11466207B2Composition for etchingSOULBRAIN CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·4 claims
- 3076US11421156B2Composition for etching and method for manufacturing semiconductor device using sameSOULBRAIN CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·3 claims
- 3176US11414569B2Composition for etching and manufacturing method of semiconductor device using the sameSOULBRAIN CO LTD·Filed 2020·Granted Aug 16, 2022·0 cites·4 claims
- 3276US11390806B2Composition for etching and method for manufacturing semiconductor device using sameSOULBRAIN CO LTD·Filed 2020·Granted Jul 19, 2022·0 cites·3 claims
- 3376US11370968B2Composition for etchingSOULBRAIN CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·8 claims
- 3476US11365352B2Composition for etchingSOULBRAIN CO LTD·Filed 2020·Granted Jun 21, 2022·0 cites·8 claims
- 3575US10793775B2Etching composition and method for fabricating semiconductor device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 6, 2020·1 cites·13 claims
- 3675US7851372B2Composition for removing an insulation material, method of removing an insulation layer and method of recycling a substrate using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 14, 2010·5 cites·14 claims
- 3771US11008513B2Composition for etchingSOULBRAIN CO LTD·Filed 2019·Granted May 18, 2021·0 cites·2 claims
- 3871US10995269B2Etchant composition and method of fabricating integrated circuit device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 4, 2021·1 cites·8 claims
- 3969US11912902B2Composition for etching and manufacturing method of semiconductor device using the sameSOULBRAIN CO LTD·Filed 2018·Granted Feb 27, 2024·0 cites·4 claims
- 4067US11198815B2Etching composition and method for fabricating semiconductor device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 14, 2021·0 cites·20 claims
- 4167US8465662B2Composition for wet etching of silicon dioxideLIM JUNG HUN·Filed 2010·Granted Jun 18, 2013·3 cites·4 claims
- 4264US2021384212A1Composition for etching and manufacturing method of semiconductor device using the sameSOULBRAIN CO LTD·Filed 2021·Application pending·0 cites
- 4363US7951765B2Photoresist stripper composition for semiconductor manufacturingTECHNO SEMICHEM CO LTD·Filed 2006·Granted May 31, 2011·3 cites·6 claims
- 4458US10800972B2Etching composition and method for fabricating semiconductor device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 13, 2020·0 cites·20 claims
- 4554US10332740B2Method of manufacturing a semiconductor device and a cleaning composition for an adhesive layerSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 25, 2019·0 cites·15 claims
- 4654US2019189631A1Composition for etching and manufacturing method of semiconductor device using the sameSOULBRAIN CO LTD·Filed 2018·Application pending·0 cites
- 4748US2006172907A1Microelectronic cleaning agent(s) and method(s) of fabricating semiconductor device(s) using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4842US2006228890A1Cleaning solution and method of forming a metal pattern for a semiconductor device using the sameLEE HYO-SAN·Filed 2006·Application pending·0 cites
- 4940US2006234516A1Composition for cleaning semiconductor device and method for cleaning semiconductor device using the sameHONG EUN S·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →