Inventor · disambiguated record
Jung-Chih Tsao
Also filed as: TSAO JUNG-CHIH
41 granted patents·14 pending applications·155 citations·filing 2003–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD29TAIWAN SEMICONDUCTOR MFG20CHANG SHIH-CHIEH2CHEN KEI-WEI1LIU CHI-WEN1
Top patents by PatentIndex Score
55 records- 0191US10134801B2Method of forming deep trench isolation in radiation sensing substrate and image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 20, 2018·7 cites·20 claims
- 0287US11450557B2Poisoned metal layer with sloped sidewall for making dual damascene interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
- 0387US8247322B2Via/contact and damascene structures and manufacturing methods thereofCHANG SHIH-CHIEH·Filed 2007·Granted Aug 21, 2012·14 cites·16 claims
- 0487US7432192B2Post ECP multi-step anneal/H2 treatment to reduce film impurityTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Oct 7, 2008·11 cites·20 claims
- 0583US11417700B2Image sensing device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·1 cites·20 claims
- 0683US10074594B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 11, 2018·4 cites·20 claims
- 0783US7189650B2Method and apparatus for copper film quality enhancement with two-step depositionTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 13, 2007·28 cites·28 claims
- 0883US2024379727A1Method of Forming Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0982US10475847B2Semiconductor device having stress-neutralized film stack and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 12, 2019·2 cites·20 claims
- 1081US10741601B2Image sensing device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·2 cites·20 claims
- 1181US7030016B2Post ECP multi-step anneal/H2 treatment to reduce film impurityTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 18, 2006·22 cites·37 claims
- 1280US2025360594A1Apparatus and method for monitoring chemical mechanical polishingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1379US12142628B2Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 1478US9691804B2Image sensing device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 27, 2017·2 cites·20 claims
- 1577US7368379B2Multi-layer interconnect structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 6, 2008·5 cites·20 claims
- 1676US12051617B2Method of making a semiconductor device and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 1776US11404470B2Method of forming deep trench isolation in radiation sensing substrate and image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 2, 2022·0 cites·20 claims
- 1876US8531036B2Via/contact and damascene structuresCHANG SHIH-CHIEH·Filed 2012·Granted Sep 10, 2013·3 cites·19 claims
- 1976US2024355670A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2068US7071100B2Method of forming barrier layer with reduced resistivity and improved reliability in copper damascene processCHEN KEI-WEI·Filed 2004·Granted Jul 4, 2006·20 cites·22 claims
- 2167US2024051085A1Apparatus and method for monitoring chemical mechanical polishingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2266US12512323B2Method of manufacturing a replacement metal gate device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
- 2366US11387274B2Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 12, 2022·0 cites·20 claims
- 2466US7417321B2Via structure and process for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 26, 2008·4 cites·16 claims
- 2564US9735231B2Block layer in the metal gate of MOS devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 15, 2017·1 cites·20 claims
- 2662US11769669B2Replacement metal gate device structure and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·0 cites·20 claims
- 2762US10510798B2Method of forming deep trench isolation in radiation sensing substrate and image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·20 claims
- 2861US7183199B2Method of reducing the pattern effect in the CMP processTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 27, 2007·10 cites·7 claims
- 2958US11854980B2Method for forming titanium nitride barrier with small surface grains in interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·0 cites·20 claims
- 3058US7208404B2Method to reduce Rs pattern dependence effectTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 24, 2007·9 cites·20 claims
- 3156US10840330B2Block layer in the metal gate of MOS devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 17, 2020·0 cites·20 claims
- 3256US10157953B2Image sensing device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·0 cites·20 claims
- 3356US2024392463A1Semiconductor electrochemical plating apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3455US7199045B2Metal-filled openings for submicron devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 3, 2007·6 cites·18 claims
- 3554US10867889B2Method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 3652US9991204B2Through via structure for step coverage improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 5, 2018·0 cites·20 claims
- 3748US10796996B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 6, 2020·0 cites·20 claims
- 3847US9711454B2Through via structure for step coverage improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·0 cites·15 claims
- 3947US2007126120A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 4045US7667835B2Apparatus and method for preventing copper peeling in ECPTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Feb 23, 2010·0 cites·15 claims
- 4145US2010230815A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2010·Application pending·0 cites
- 4244US2015235953A1Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Application pending·0 cites
- 4343US9847296B2Barrier layer and structure methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 19, 2017·0 cites·19 claims
- 4442US7481910B2Method and apparatus for stabilizing plating film impuritiesTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jan 27, 2009·1 cites·8 claims
- 4542US2008251889A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 4642US2007257366A1Barrier layer for semiconductor interconnect structureTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 4742US2007252277A1Semiconductor devices and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 4840US2006219566A1Method for fabricating metal layerTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 4939US9859124B2Method of manufacturing semiconductor device with recessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 2, 2018·0 cites·20 claims
- 5039US7969708B2Alpha tantalum capacitor plateTAIWAN SEMICONDUCTOR COMPANY LTD·Filed 2007·Granted Jun 28, 2011·0 cites·20 claims
Showing the top 50 of 55 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Jung-Chih Tsao files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →