Inventor · disambiguated record
Jyh-Kuang Lin
Also filed as: LIN JYH-KUANG
7 granted patents·1 pending application·228 citations·filing 1993–2015
88Inventor score
Files withUNITED MICROELECTRONICS CORP6INTEGRATED SILICON SOLUTION INC1UNITED MICROFLECTRONICS CORP1
Top patents by PatentIndex Score
8 records- 0191US6271082B1Method of fabricating a mixed circuit capacitorUNITED MICROELECTRONICS CORP·Filed 2000·Granted Aug 7, 2001·74 cites·20 claims
- 0282US5501996AMethod of manufacture of high coupling ratio single polysilicon floating gate EPROM or EEPROM cellUNITED MICROELECTRONICS CORP·Filed 1994·Granted Mar 26, 1996·54 cites·30 claims
- 0374US5424233AMethod of making electrically programmable and erasable memory device with a depressionUNITED MICROFLECTRONICS CORP·Filed 1994·Granted Jun 13, 1995·37 cites·25 claims
- 0474US5376572AMethod of making an electrically erasable programmable memory device with improved erase and write operationUNITED MICROELECTRONICS CORP·Filed 1994·Granted Dec 27, 1994·33 cites·26 claims
- 0552US5501997AProcess of fabricating semiconductor devices having lightly-doped drainUNITED MICROELECTRONICS CORP·Filed 1995·Granted Mar 26, 1996·16 cites·9 claims
- 0644US5700728AMethod of forming an MNOS/MONOS by employing large tilt angle ion implantation underneath the field oxideUNITED MICROELECTRONICS CORP·Filed 1995·Granted Dec 23, 1997·11 cites·18 claims
- 0729US5334543AMethod of making reverse lightly doped drain (LDD) for buried N+ conductorUNITED MICROELECTRONICS CORP·Filed 1993·Granted Aug 2, 1994·3 cites·11 claims
- 0829US2017103813A1Effective programming method for non-volatile flash memory using junction band to band hot electronINTEGRATED SILICON SOLUTION INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →