Inventor · disambiguated record
Kao-Ting Lai
Also filed as: LAI KAO-TING
8 granted patents·8 pending applications·602 citations·filing 2009–2025
85Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD12LAI KAO-TING1LI HOU-JU1SHEN CHUN-LIANG1TAIWAN SEMICONDUCTION MFG CO LTD1
Top patents by PatentIndex Score
16 records- 0195US8729634B2FinFET with high mobility and strain channelSHEN CHUN-LIANG·Filed 2012·Granted May 20, 2014·581 cites·20 claims
- 0288US8404538B2Device with self aligned stressor and method of making sameLAI KAO-TING·Filed 2009·Granted Mar 26, 2013·17 cites·20 claims
- 0384US2024395910A1Finfet with dummy fins and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0482US12266716B2Finfet with dummy fins and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 0578US2025359275A1Gate-all-around transistor having multiple gate lengthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0676US10770571B2FinFET with dummy fins and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·1 cites·20 claims
- 0774US11677014B2FinFET with dummy fins and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
- 0871US11049959B2FinFET with dummy fins and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 29, 2021·0 cites·20 claims
- 0970US2025234623A1Gate-all-around transistor having multiple gate lengthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1068US9368628B2FinFET with high mobility and strain channelLI HOU-JU·Filed 2012·Granted Jun 14, 2016·3 cites·21 claims
- 1159US2025374629A1Nanostructure field-effect transistor device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1257US2025280559A1Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1356US2025031441A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1455US2025031436A1Structure and formation method of semiconductor device with semiconductor nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1553US9997629B2FinFET with high mobility and strain channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 12, 2018·0 cites·19 claims
- 1650US2013161650A1Device with self aligned stressor and method of making sameTAIWAN SEMICONDUCTION MFG CO LTD·Filed 2013·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Kao-Ting Lai files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →