Inventor · disambiguated record
Kam-Leung Lee
Also filed as: LEE KAM L · LEE KAM LEUNG
46 granted patents·4 pending applications·829 citations·filing 1988–2021
98Inventor score
Top patents by PatentIndex Score
50 records- 0197US7547616B2Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometricsIBM·Filed 2006·Granted Jun 16, 2009·30 cites·1 claims
- 0293US5171992ANanometer scale probe for an atomic force microscope, and method for making sameIBM·Filed 1991·Granted Dec 15, 1992·119 cites·27 claims
- 0392US5281447APatterned deposition of metals via photochemical decomposition of metal-oxalate complexesIBM·Filed 1991·Granted Jan 25, 1994·85 cites·12 claims
- 0491US9105559B2Conformal doping for FinFET devicesIBM·Filed 2013·Granted Aug 11, 2015·13 cites·6 claims
- 0590US11101219B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2019·Granted Aug 24, 2021·3 cites·18 claims
- 0690US10269714B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2016·Granted Apr 23, 2019·4 cites·9 claims
- 0790US9929258B1Method of junction control for lateral bipolar junction transistorIBM·Filed 2016·Granted Mar 27, 2018·5 cites·8 claims
- 0889US10985105B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2018·Granted Apr 20, 2021·3 cites·18 claims
- 0989US9514997B2Silicon-germanium FinFET device with controlled junctionIBM·Filed 2015·Granted Dec 6, 2016·5 cites·12 claims
- 1089US7705345B2High performance strained silicon FinFETs device and method for forming sameIBM·Filed 2004·Granted Apr 27, 2010·52 cites·18 claims
- 1189US6518136B2Sacrificial polysilicon sidewall process and rapid thermal spike annealing for advance CMOS fabricationIBM·Filed 2000·Granted Feb 11, 2003·42 cites·8 claims
- 1288US6437406B1Super-halo formation in FETsIBM·Filed 2000·Granted Aug 20, 2002·41 cites·10 claims
- 1387US10833150B2Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structuresIBM·Filed 2018·Granted Nov 10, 2020·4 cites·14 claims
- 1486US6537886B2Ultra-shallow semiconductor junction formationIBM·Filed 2001·Granted Mar 25, 2003·32 cites·26 claims
- 1584US9196712B1FinFET extension regionsIBM·Filed 2014·Granted Nov 24, 2015·6 cites·11 claims
- 1684US6410430B1Enhanced ultra-shallow junctions in CMOS using high temperature silicide processIBM·Filed 2000·Granted Jun 25, 2002·31 cites·28 claims
- 1784US6037640AUltra-shallow semiconductor junction formationIBM·Filed 1998·Granted Mar 14, 2000·63 cites·9 claims
- 1883US4933552AInspection system utilizing retarding field back scattered electron collectionIBM·Filed 1988·Granted Jun 12, 1990·40 cites·14 claims
- 1982US6614079B2All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOSIBM·Filed 2001·Granted Sep 2, 2003·25 cites·11 claims
- 2081US6051483AFormation of ultra-shallow semiconductor junction using microwave annealingIBM·Filed 1997·Granted Apr 18, 2000·53 cites·26 claims
- 2180US10541151B1Disposable laser/flash anneal absorber for embedded neuromorphic memory device fabricationIBM·Filed 2018·Granted Jan 21, 2020·2 cites·16 claims
- 2280US7074684B2Elevated source drain disposable spacer CMOSIBM·Filed 2004·Granted Jul 11, 2006·20 cites·1 claims
- 2378US6291801B1Continual flow rapid thermal processing apparatus and methodIBM·Filed 2000·Granted Sep 18, 2001·17 cites·12 claims
- 2477US12062614B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2021·Granted Aug 13, 2024·0 cites·19 claims
- 2576US11862567B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 2674US8927422B2Raised silicide contactALPTEKIN EMRE·Filed 2012·Granted Jan 6, 2015·3 cites·19 claims
- 2774US6727135B2All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOSIBM·Filed 2003·Granted Apr 27, 2004·16 cites·22 claims
- 2873US6316123B1Microwave annealingIBM·Filed 2000·Granted Nov 13, 2001·15 cites·3 claims
- 2972US8114748B2Shallow extension regions having abrupt extension junctionsLEE KAM-LEUNG·Filed 2009·Granted Feb 14, 2012·5 cites·16 claims
- 3071US9922886B2Silicon-germanium FinFET device with controlled junctionIBM·Filed 2016·Granted Mar 20, 2018·1 cites·11 claims
- 3167US6051283AMicrowave annealingIBM·Filed 1998·Granted Apr 18, 2000·22 cites·23 claims
- 3265US6777298B2Elevated source drain disposable spacer CMOSIBM·Filed 2002·Granted Aug 17, 2004·8 cites·16 claims
- 3365US6297086B1Application of excimer laser anneal to DRAM processingIBM·Filed 1999·Granted Oct 2, 2001·21 cites·20 claims
- 3464US6743686B2Sacrificial polysilicon sidewall process and rapid thermal spike annealing for advance CMOS fabricationIBM·Filed 2002·Granted Jun 1, 2004·8 cites·11 claims
- 3559US6172399B1Formation of ultra-shallow semiconductor junction using microwave annealingIBM·Filed 1998·Granted Jan 9, 2001·19 cites·3 claims
- 3658US7691733B2Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometricsIBM·Filed 2008·Granted Apr 6, 2010·0 cites·16 claims
- 3756US9406569B2Semiconductor device having diffusion barrier to reduce back channel leakageGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 2, 2016·0 cites·5 claims
- 3854US8741782B2Charging-free electron beam cure of dielectric materialDIMITRAKOPOULOS CHRISTOS D·Filed 2012·Granted Jun 3, 2014·0 cites·19 claims
- 3954US8525123B2Charging-free electron beam cure of dielectric materialDIMITRAKOPOULOS CHRISTOS D·Filed 2008·Granted Sep 3, 2013·0 cites·13 claims
- 4054US6281479B1Continual flow rapid thermal processing apparatus and methodIBM·Filed 2000·Granted Aug 28, 2001·3 cites·19 claims
- 4153US10134882B2Method of junction control for lateral bipolar junction transistorIBM·Filed 2017·Granted Nov 20, 2018·0 cites·13 claims
- 4252US9240354B2Semiconductor device having diffusion barrier to reduce back channel leakageIBM·Filed 2012·Granted Jan 19, 2016·0 cites·8 claims
- 4349US10529832B2Shallow, abrupt and highly activated tin extension implant junctionIBM·Filed 2016·Granted Jan 7, 2020·0 cites·13 claims
- 4449US6114662AContinual flow rapid thermal processing apparatus and methodIBM·Filed 1997·Granted Sep 5, 2000·11 cites·19 claims
- 4541US2006220112A1Semiconductor device forming method and structure for retarding dopant-enhanced diffusionIBM·Filed 2005·Application pending·0 cites
- 4641US2009186457A1Anneal sequence integration for cmos devicesIBM·Filed 2008·Application pending·0 cites
- 4740US7163867B2Method for slowing down dopant-enhanced diffusion in substrates and devices fabricated therefromIBM·Filed 2003·Granted Jan 16, 2007·0 cites·41 claims
- 4838US2012190216A1Annealing techniques for high performance complementary metal oxide semiconductor (cmos) device fabricationCHAN KEVIN K·Filed 2011·Application pending·0 cites
- 4937US2011254138A1Low-temperature absorber film and method of fabricationIBM·Filed 2010·Application pending·0 cites
- 5032US6369434B1Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistorsIBM·Filed 1999·Granted Apr 9, 2002·2 cites·4 claims
Join the waitlist — get patent alerts
Get an alert when Kam-Leung Lee files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →