Inventor · disambiguated record
Kam Hong Lui
Also filed as: LUI KAM · LUI KAM HONG
18 granted patents·1 pending application·433 citations·filing 2001–2016
95Inventor score
Top patents by PatentIndex Score
19 records- 0197US7183610B2Super trench MOSFET including buried source electrode and method of fabricating the sameSILICONIX INC·Filed 2004·Granted Feb 27, 2007·118 cites·22 claims
- 0294US7557409B2Super trench MOSFET including buried source electrodeSILICONIX INC·Filed 2007·Granted Jul 7, 2009·26 cites·2 claims
- 0391US6906380B1Drain side gate trench metal-oxide-semiconductor field effect transistorVISHAY SILICONIX·Filed 2004·Granted Jun 14, 2005·65 cites·20 claims
- 0489US7494876B1Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the sameVISHAY SILICONIX·Filed 2005·Granted Feb 24, 2009·20 cites·8 claims
- 0586US6921697B2Method for making trench MIS device with reduced gate-to-drain capacitanceSILICONIX INC·Filed 2002·Granted Jul 26, 2005·31 cites·7 claims
- 0683US8368126B2Trench metal oxide semiconductor with recessed trench material and remote contactsVISHAY SILICONIX·Filed 2008·Granted Feb 5, 2013·11 cites·17 claims
- 0782US6882000B2Trench MIS device with reduced gate-to-drain capacitanceSILICONIX INC·Filed 2001·Granted Apr 19, 2005·24 cites·19 claims
- 0881US7344945B1Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistorVISHAY SILICONIX·Filed 2004·Granted Mar 18, 2008·27 cites·16 claims
- 0980US8183629B2Stacked trench metal-oxide-semiconductor field effect transistor devicePATTANAYAK DEVA·Filed 2008·Granted May 22, 2012·10 cites·10 claims
- 1080US6903412B2Trench MIS device with graduated gate oxide layerSILICONIX INC·Filed 2002·Granted Jun 7, 2005·21 cites·8 claims
- 1177US7012005B2Self-aligned differential oxidation in trenches by ion implantationSILICONIX INC·Filed 2002·Granted Mar 14, 2006·21 cites·6 claims
- 1277US6875657B2Method of fabricating trench MIS device with graduated gate oxide layerSILICONIX INC·Filed 2002·Granted Apr 5, 2005·17 cites·14 claims
- 1377US6709930B2Thicker oxide formation at the trench bottom by selective oxide depositionSILICONIX INC·Filed 2002·Granted Mar 23, 2004·24 cites·13 claims
- 1475US7704836B2Method of fabricating super trench MOSFET including buried source electrodeSILICONIX INC·Filed 2008·Granted Apr 27, 2010·4 cites·7 claims
- 1568US6849898B2Trench MIS device with active trench corners and thick bottom oxideSILICONIX INC·Filed 2001·Granted Feb 1, 2005·11 cites·25 claims
- 1662US9306056B2Semiconductor device with trench-like feed-throughsPATTANAYAK DEVA·Filed 2009·Granted Apr 5, 2016·2 cites·21 claims
- 1760US8883580B2Trench metal oxide semiconductor with recessed trench material and remote contactsVISHAY SILICONIX·Filed 2012·Granted Nov 11, 2014·1 cites·6 claims
- 1854US2010019316A1Method of fabricating super trench MOSFET including buried source electrodeSILICONIX INC·Filed 2009·Application pending·0 cites
- 1947US10032901B2Semiconductor device with trench-like feed-throughsVISHAY SILICONIX·Filed 2016·Granted Jul 24, 2018·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →