Inventor · disambiguated record
Karsten Wieczorek
Also filed as: WIECZOREK KARSTEN
78 granted patents·17 pending applications·1,789 citations·filing 1998–2009
99Inventor score
Files withADVANCED MICRO DEVICES INC79WIECZOREK KARSTEN4GLOBALFOUNDRIES INC1HORSTMANN MANFRED1WIATR MACIEJ1
Top patents by PatentIndex Score
95 records- 0198US7297994B2Semiconductor device having a retrograde dopant profile in a channel regionADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 20, 2007·117 cites·11 claims
- 0297US6274894B1Low-bandgap source and drain formation for short-channel MOS transistorsADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 14, 2001·205 cites·18 claims
- 0396US6881641B2Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the sameADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 19, 2005·132 cites·49 claims
- 0494US7060549B1SRAM devices utilizing tensile-stressed strain films and methods for fabricating the sameADVANCED MICRO DEVICES INC·Filed 2005·Granted Jun 13, 2006·36 cites·15 claims
- 0591US6838363B2Circuit element having a metal silicide region thermally stabilized by a barrier diffusion materialADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 4, 2005·54 cites·24 claims
- 0690US6255703B1Device with lower LDD resistanceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 3, 2001·69 cites·20 claims
- 0789US7238578B2Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regionsADVANCED MICRO DEVICES INC·Filed 2005·Granted Jul 3, 2007·15 cites·18 claims
- 0889US6352885B1Transistor having a peripherally increased gate insulation thickness and a method of fabricating the sameADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 5, 2002·46 cites·22 claims
- 0987US6620718B1Method of forming metal silicide regions on a gate electrode and on the source/drain regions of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 16, 2003·47 cites·21 claims
- 1087US6306698B1Semiconductor device having metal silicide regions of differing thicknesses above the gate electrode and the source/drain regions, and method of making sameADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 23, 2001·46 cites·17 claims
- 1184US6268257B1Method of forming a transistor having a low-resistance gate electrodeADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 31, 2001·37 cites·28 claims
- 1282US6723663B1Technique for forming an oxide/nitride layer stack by controlling the nitrogen ion concentration in a nitridation plasmaADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 20, 2004·26 cites·23 claims
- 1381US6566718B2Field effect transistor with an improved gate contact and method of fabricating the sameADVANCED MICRO DEVICES INC·Filed 2001·Granted May 20, 2003·33 cites·32 claims
- 1481US6383906B1Method of forming junction-leakage free metal salicide in a semiconductor wafer with ultra-low silicon consumptionADVANCED MICRO DEVICES INC·Filed 2000·Granted May 7, 2002·29 cites·11 claims
- 1581US6242776B1Device improvement by lowering LDD resistance with new silicide processADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 5, 2001·41 cites·14 claims
- 1679US6423634B1Method of forming low resistance metal silicide region on a gate electrode of a transistorADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 23, 2002·27 cites·38 claims
- 1779US6100145ASilicidation with silicon buffer layer and silicon spacersADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 8, 2000·47 cites·16 claims
- 1878US6812115B2Method of filling an opening in a material layer with an insulating materialADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·26 cites·59 claims
- 1976US7955937B2Method for manufacturing semiconductor device comprising SOI transistors and bulk transistorsADVANCED MICRO DEVICES INC·Filed 2006·Granted Jun 7, 2011·7 cites·7 claims
- 2076US6344397B1Semiconductor device having a gate electrode with enhanced electrical characteristicsADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 5, 2002·24 cites·31 claims
- 2176US6255214B1Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of source and drain regionsADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 3, 2001·38 cites·7 claims
- 2275US7994037B2Gate dielectrics of different thickness in PMOS and NMOS transistorsADVANCED MICRO DEVICES INC·Filed 2009·Granted Aug 9, 2011·6 cites·20 claims
- 2375US6271122B1Method of compensating for material loss in a metal silicone layer in contacts of integrated circuit devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 7, 2001·37 cites·19 claims
- 2474US6541863B1Semiconductor device having a reduced signal processing time and a method of fabricating the sameADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 1, 2003·20 cites·17 claims
- 2574US6150243AShallow junction formation by out-diffusion from a doped dielectric layer through a salicide layerADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 21, 2000·46 cites·19 claims
- 2673US7745334B2Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniquesADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 29, 2010·4 cites·17 claims
- 2773US6821887B2Method of forming a metal silicide gate in a standard MOS process sequenceADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 23, 2004·18 cites·45 claims
- 2872US7192881B2Method of forming sidewall spacer elements for a circuit element by increasing an etch selectivityADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 20, 2007·14 cites·15 claims
- 2971US7122410B2Polysilicon line having a metal silicide region enabling linewidth scaling including forming a second metal silicide region on the substrateADVANCED MICRO DEVICES INC·Filed 2004·Granted Oct 17, 2006·15 cites·24 claims
- 3071US6593197B2Sidewall spacer based fet alignment technologyADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 15, 2003·16 cites·29 claims
- 3171US6133124ADevice improvement by source to drain resistance lowering through undersilicidationADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 17, 2000·38 cites·36 claims
- 3270US7419867B2CMOS gate structure comprising predoped semiconductor gate material with improved uniformity of dopant distribution and method of forming the structureADVANCED MICRO DEVICES INC·Filed 2005·Granted Sep 2, 2008·4 cites·24 claims
- 3370US6746927B2Semiconductor device having a polysilicon line structure with increased metal silicide portions and method for forming the polysilicon line structure of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 8, 2004·15 cites·36 claims
- 3470US6165903AMethod of forming ultra-shallow junctions in a semiconductor wafer with deposited silicon layer to reduce silicon consumption during salicidationADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 26, 2000·29 cites·18 claims
- 3569US6806126B1Method of manufacturing a semiconductor componentADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 19, 2004·12 cites·25 claims
- 3668US6812074B2SOI field effect transistor element having a recombination region and method of forming sameADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·11 cites·8 claims
- 3767US7217657B2Semiconductor device having different metal silicide portions and method for fabricating the semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted May 15, 2007·13 cites·23 claims
- 3867US6849516B2Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layerADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 1, 2005·11 cites·28 claims
- 3967US6821840B2Semiconductor device including a field effect transistor and a passive capacitor having reduced leakage current and an improved capacitance per unit areaADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 23, 2004·13 cites·10 claims
- 4067US6274511B1Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of refractory metal layerADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 14, 2001·25 cites·16 claims
- 4166US6555892B2Semiconductor device with reduced line-to-line capacitance and cross talk noiseADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 29, 2003·12 cites·9 claims
- 4266US6238986B1Formation of junctions by diffusion from a doped film at silicidationADVANCED MICRO DEVICES INC·Filed 1998·Granted May 29, 2001·33 cites·22 claims
- 4365US6798028B2Field effect transistor with reduced gate delay and method of fabricating the sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 28, 2004·12 cites·23 claims
- 4464US6754553B2Implant monitoring using multiple implanting and annealing stepsADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 22, 2004·9 cites·9 claims
- 4563US6812159B2Method of forming a low leakage dielectric layer providing an increased capacitive couplingADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·8 cites·33 claims
- 4662US6875676B2Methods for producing a highly doped electrode for a field effect transistorADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 5, 2005·8 cites·24 claims
- 4762US6673665B2Semiconductor device having increased metal silicide portions and method of forming the semiconductorADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 6, 2004·10 cites·24 claims
- 4862US6410410B1Method of forming lightly doped regions in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 25, 2002·8 cites·11 claims
- 4962US6096599AFormation of junctions by diffusion from a doped film into and through a silicide during silicidationADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 1, 2000·27 cites·23 claims
- 5059US7226859B2Method of forming different silicide portions on different silicon-containing regions in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 5, 2007·6 cites·30 claims
Showing the top 50 of 95 patent records by PatentIndex Score.
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