Inventor · disambiguated record
Kenny L. Doan
Also filed as: DOAN KENNY · DOAN KENNY L · DOAN KENNY LINH
20 granted patents·8 pending applications·1,443 citations·filing 1998–2019
96Inventor score
Top patents by PatentIndex Score
28 records- 0198US8231799B2Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zoneBERA KALLOL·Filed 2006·Granted Jul 31, 2012·557 cites·18 claims
- 0297US7316761B2Apparatus for uniformly etching a dielectric layerAPPLIED MATERIALS INC·Filed 2003·Granted Jan 8, 2008·178 cites·20 claims
- 0397US6403491B1Etch method using a dielectric etch chamber with expanded process windowAPPLIED MATERIALS INC·Filed 2000·Granted Jun 11, 2002·396 cites·24 claims
- 0496US6568346B2Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supplyAPPLIED MATERIALS INC·Filed 2001·Granted May 27, 2003·66 cites·22 claims
- 0595US6825618B2Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supplyFiled 2003·Granted Nov 30, 2004·60 cites·4 claims
- 0695US6273022B1Distributed inductively-coupled plasma sourceAPPLIED MATERIALS INC·Filed 1998·Granted Aug 14, 2001·96 cites·42 claims
- 0790US7431859B2Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulationAPPLIED MATERIALS INC·Filed 2006·Granted Oct 7, 2008·18 cites·16 claims
- 0889US7540971B2Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas contentAPPLIED MATERIALS INC·Filed 2006·Granted Jun 2, 2009·16 cites·19 claims
- 0987US7541292B2Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zonesAPPLIED MATERIALS INC·Filed 2006·Granted Jun 2, 2009·12 cites·21 claims
- 1080US10504765B2Electrostatic chuck assembly having a dielectric fillerAPPLIED MATERIALS INC·Filed 2017·Granted Dec 10, 2019·2 cites·20 claims
- 1176US6686293B2Method of etching a trench in a silicon-containing dielectric materialAPPLIED MATERIALS INC·Filed 2002·Granted Feb 3, 2004·18 cites·46 claims
- 1274US9129911B2Boron-doped carbon-based hardmask etch processingDOAN KENNY LINH·Filed 2014·Granted Sep 8, 2015·3 cites·18 claims
- 1372US8778207B2Plasma etch processes for boron-doped carbonaceous mask layersKIM JONG MUN·Filed 2012·Granted Jul 15, 2014·3 cites·20 claims
- 1471US10546731B1Method, apparatus and system for wafer dechucking using dynamic voltage sweepingAPPLIED MATERIALS INC·Filed 2018·Granted Jan 28, 2020·1 cites·20 claims
- 1569US9748366B2Etching oxide-nitride stacks using C4F6H2APPLIED MATERIALS INC·Filed 2014·Granted Aug 29, 2017·2 cites·20 claims
- 1669US7846846B2Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewallsAPPLIED MATERIALS INC·Filed 2007·Granted Dec 7, 2010·4 cites·19 claims
- 1766US8668837B2Method for etching substrateDOAN KENNY LINH·Filed 2012·Granted Mar 11, 2014·2 cites·9 claims
- 1863US10930540B2Electrostatic chuck assembly having a dielectric fillerAPPLIED MATERIALS INC·Filed 2019·Granted Feb 23, 2021·0 cites·9 claims
- 1962US7105442B2Ashable layers for reducing critical dimensions of integrated circuit featuresAPPLIED MATERIALS INC·Filed 2002·Granted Sep 12, 2006·9 cites·8 claims
- 2059US2020066493A1Methods and apparatus for plasma liners with high fluid conductanceAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 2150US10410845B2Using bias RF pulsing to effectively clean electrostatic chuck (ESC)APPLIED MATERIALS INC·Filed 2017·Granted Sep 10, 2019·0 cites·20 claims
- 2243US2007254483A1Plasma etch process using polymerizing etch gases and an inert diluent gas in independent gas injection zones to improve etch profile or etch rate uniformityAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 2342US2015001180A1Process kit for edge critical dimension uniformity controlAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 2442US2010330805A1Methods for forming high aspect ratio features on a substrateDOAN KENNY LINH·Filed 2007·Application pending·0 cites
- 2542US2014342570A1Etch process having adaptive control with etch depth of pressure and powerAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 2638US2013122712A1Method of etching high aspect ratio features in a dielectric layerKIM JONG MUN·Filed 2012·Application pending·0 cites
- 2737US2002101167A1Capacitively coupled reactive ion etch plasma reactor with overhead high density plasma source for chamber dry cleaningAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 2836US2013224960A1Methods for etching oxide layers using process gas pulsingPAYYAPILLY JAIRAJ·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →