Inventor · disambiguated record
Keith J. Hansen
Also filed as: HANSEN KEITH · HANSEN KEITH J · HANSEN KEITH JOHN
17 granted patents·1 pending application·492 citations·filing 1989–2022
96Inventor score
Top patents by PatentIndex Score
18 records- 0193US11263737B2Defect classification and source analysis for semiconductor equipmentLAM RES CORP·Filed 2019·Granted Mar 1, 2022·10 cites·40 claims
- 0291US5391394ATungsten deposition process for low contact resistivity to siliconLSI LOGIC CORP·Filed 1991·Granted Feb 21, 1995·113 cites·22 claims
- 0382US8791714B2Fault detection apparatuses and methods for fault detection of semiconductor processing toolsHANSEN KEITH JOHN·Filed 2012·Granted Jul 29, 2014·5 cites·21 claims
- 0482US6001227ATarget for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such targetAPPLIED MATERIALS INC·Filed 1997·Granted Dec 14, 1999·40 cites·30 claims
- 0582US5914001AIn-situ etch of CVD chamberLSI LOGIC CORP·Filed 1997·Granted Jun 22, 1999·43 cites·3 claims
- 0681US8120376B2Fault detection apparatuses and methods for fault detection of semiconductor processing toolsHANSEN KEITH JOHN·Filed 2007·Granted Feb 21, 2012·7 cites·34 claims
- 0778US5203956AMethod for performing in-situ etch of a CVD chamberLSI LOGIC CORP·Filed 1991·Granted Apr 20, 1993·64 cites·4 claims
- 0868US5211796AApparatus for performing in-situ etch of CVD chamberLST LOGIC CORP·Filed 1991·Granted May 18, 1993·48 cites·3 claims
- 0967US6228186B1Method for manufacturing metal sputtering target for use in DC magnetron so that target has reduced number of conduction anomaliesAPPLIED MATERIALS INC·Filed 1999·Granted May 8, 2001·23 cites·37 claims
- 1067US5021980ARemote measurement of temperatureLSI LOGIC CORP·Filed 1989·Granted Jun 4, 1991·30 cites·6 claims
- 1163US5681613AFiltering technique for CVD chamber process gasesLSI LOGIC CORP·Filed 1995·Granted Oct 28, 1997·20 cites·10 claims
- 1263US2022270237A1Defect classification and source analysis for semiconductor equipmentLAM RES CORP·Filed 2022·Application pending·0 cites
- 1358US6171455B1Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such targetAPPLIED MATERIALS INC·Filed 1999·Granted Jan 9, 2001·15 cites·24 claims
- 1457US5123375AStructure for filtering CVD chamber process gasesLSI LOGIC CORP·Filed 1990·Granted Jun 23, 1992·27 cites·4 claims
- 1556US6113699APurging gas control structure for CVD chamberLSI LOGIC CORP·Filed 1997·Granted Sep 5, 2000·13 cites·8 claims
- 1655US6126791ATarget for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such targetAPPLIED MATERIALS INC·Filed 1999·Granted Oct 3, 2000·12 cites·25 claims
- 1755US5853804AGas control technique for limiting surging of gas into a CVD chamberLSI LOGIC CORP·Filed 1997·Granted Dec 29, 1998·13 cites·5 claims
- 1838US5180432AApparatus for conducting a refractory metal deposition processLSI LOGIC CORP·Filed 1990·Granted Jan 19, 1993·9 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →