Inventor · disambiguated record
Kegang Huang
Also filed as: HUANG KEGANG
22 granted patents·4 pending applications·580 citations·filing 1998–2019
95Inventor score
Top patents by PatentIndex Score
26 records- 0198US8564076B1Internal electrical contact for enclosed MEMS devicesINVENSENSE INC·Filed 2013·Granted Oct 22, 2013·40 cites·18 claims
- 0298US8513747B1Integrated MEMS devices with controlled pressure environments by means of enclosed volumesINVENSENSE INC·Filed 2012·Granted Aug 20, 2013·44 cites·14 claims
- 0398US8350346B1Integrated MEMS devices with controlled pressure environments by means of enclosed volumesINVENSENSE INC·Filed 2012·Granted Jan 8, 2013·101 cites·22 claims
- 0497US6794311B2Method and apparatus for treating low k dielectric layers to reduce diffusionAPPLIED MATERIALS INC·Filed 2001·Granted Sep 21, 2004·260 cites·29 claims
- 0595US7477440B1Reflective spatial light modulator having dual layer electrodes and method of fabricating sameMIRADIA INC·Filed 2006·Granted Jan 13, 2009·70 cites·17 claims
- 0686US10442680B2Electric connection flexuresMEMS DRIVE INC·Filed 2016·Granted Oct 15, 2019·3 cites·5 claims
- 0782US8945969B2Internal electrical contact for enclosed MEMS devicesINVENSENSE INC·Filed 2014·Granted Feb 3, 2015·2 cites·9 claims
- 0882US8822252B2Internal electrical contact for enclosed MEMS devicesINVENSENSE INC·Filed 2013·Granted Sep 2, 2014·3 cites·13 claims
- 0977US9540230B2Methods for CMOS-MEMS integrated devices with multiple sealed cavities maintained at various pressuresDANEMAN MICHAEL·Filed 2012·Granted Jan 10, 2017·3 cites·6 claims
- 1076US6559074B1Method of forming a silicon nitride layer on a substrateAPPLIED MATERIALS INC·Filed 2001·Granted May 6, 2003·19 cites·14 claims
- 1170US7371427B2Reduction of hillocks prior to dielectric barrier deposition in Cu damasceneAPPLIED MATERIALS INC·Filed 2003·Granted May 13, 2008·11 cites·6 claims
- 1269US10850973B2Methods for CMOS-MEMS integrated devices with multiple sealed cavities maintained at various pressuresINVENSENSE INC·Filed 2019·Granted Dec 1, 2020·0 cites·19 claims
- 1366US7374962B2Method of fabricating reflective spatial light modulator having high contrast ratioMIRADIA INC·Filed 2005·Granted May 20, 2008·3 cites·20 claims
- 1462US10532926B2Methods for CMOS-MEMS integrated devices with multiple sealed cavities maintained at various pressuresINVENSENSE INC·Filed 2016·Granted Jan 14, 2020·0 cites·19 claims
- 1562US7911678B2Reflective spatial light modulator having dual layer electrodes and method of fabricating sameMIRADIA INC·Filed 2008·Granted Mar 22, 2011·2 cites·19 claims
- 1662US6566183B1Method of making a transistor, in particular spacers of the transistorFiled 2001·Granted May 20, 2003·9 cites·20 claims
- 1759US9221676B2Internal electrical contact for enclosed MEMS devicesINVENSENSE INC·Filed 2015·Granted Dec 29, 2015·0 cites·14 claims
- 1859US7723228B2Reduction of hillocks prior to dielectric barrier deposition in Cu damasceneAPPLIED MATERIALS INC·Filed 2003·Granted May 25, 2010·6 cites·12 claims
- 1956US7670880B2Method and structure for forming an integrated spatial light modulatorMIRADIA INC·Filed 2007·Granted Mar 2, 2010·1 cites·24 claims
- 2054US7666319B1Semiconductor etching process to release single crystal silicon mirrorsMIRADIA INC·Filed 2005·Granted Feb 23, 2010·1 cites·17 claims
- 2151US2008075888A1Reduction of hillocks prior to dielectric barrier deposition in cu damasceneAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 2250US7923789B2Method of fabricating reflective spatial light modulator having high contrast ratioMIRADIA INC·Filed 2008·Granted Apr 12, 2011·0 cites·21 claims
- 2347US7678288B2Method and structure for manufacturing bonded substrates using multiple photolithography toolsMIRADIA INC·Filed 2004·Granted Mar 16, 2010·2 cites·18 claims
- 2443US2014264655A1Surface roughening to reduce adhesion in an integrated mems deviceINVENSENSE INC·Filed 2013·Application pending·0 cites
- 2539US2012313189A1Method of preventing stiction of mems devicesHUANG KEGANG·Filed 2012·Application pending·0 cites
- 2629US2003089992A1Silicon carbide deposition for use as a barrier layer and an etch stopFiled 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →