Inventor · disambiguated record
Kenji Imanishi
Also filed as: IMANISHI KENJI
54 granted patents·27 pending applications·299 citations·filing 1995–2021
98Inventor score
Files withFUJITSU LTD28NIPPON STEEL CORP14NIPPON STEEL & SUMITOMO METAL CORP12IMANISHI KENJI7KIKKAWA TOSHIHIDE4
Top patents by PatentIndex Score
81 records- 0195US7859020B2Nitride semiconductor device, Doherty amplifier and drain voltage controlled amplifierFUJITSU LTD·Filed 2008·Granted Dec 28, 2010·31 cites·11 claims
- 0293US7795622B2Compound semiconductor deviceFUJITSU LTD·Filed 2008·Granted Sep 14, 2010·25 cites·17 claims
- 0391US8963164B2Compound semiconductor device and method of manufacturing the sameSHIMIZU SANAE·Filed 2011·Granted Feb 24, 2015·17 cites·18 claims
- 0491US7638819B2Compound semiconductor device and the fabricating method of the sameFUJITSU LTD·Filed 2005·Granted Dec 29, 2009·15 cites·7 claims
- 0589US8294181B2Compound semiconductor device and method of manufacturing the sameKIKKAWA TOSHIHIDE·Filed 2010·Granted Oct 23, 2012·10 cites·12 claims
- 0688US8912571B2Compound semiconductor device including first film on compound semiconductor layer and second film on first film and method of manufacturing the sameKANAMURA MASAHITO·Filed 2011·Granted Dec 16, 2014·10 cites·13 claims
- 0788US8866157B2Semiconductor device and method of fabricating the semiconductor deviceFUJITSU LTD·Filed 2013·Granted Oct 21, 2014·9 cites·20 claims
- 0888US8426892B2Compound semiconductor device and method of manufacturing the sameIMANISHI KENJI·Filed 2008·Granted Apr 23, 2013·11 cites·11 claims
- 0985US10491094B2Eddy current retarder with electricity generating functionNIPPON STEEL & SUMITOMO METAL CORP·Filed 2015·Granted Nov 26, 2019·3 cites·3 claims
- 1083US9354047B2Rotational misalignment measuring device of bonded substrate, rotational misalignment measuring method of bonded substrate, and method of manufacturing bonded substrateKOBE STEEL LTD·Filed 2012·Granted May 31, 2016·7 cites·6 claims
- 1183US8896022B2Method of manufacturing compound semiconductor deviceFUJITSU LTD·Filed 2013·Granted Nov 25, 2014·4 cites·9 claims
- 1283US7875535B2Compound semiconductor device using SiC substrate and its manufactureFUJITSU LTD·Filed 2009·Granted Jan 25, 2011·6 cites·6 claims
- 1382US11420472B2Front axle beam and production method thereofNIPPON STEEL CORP·Filed 2018·Granted Aug 23, 2022·2 cites·5 claims
- 1481US11485392B2Eddy-current rail brake deviceNIPPON STEEL CORP·Filed 2019·Granted Nov 1, 2022·2 cites·8 claims
- 1581US9476435B23-position operating actuator and permanent-magnet eddy-current deceleration deviceNIPPON STEEL & SUMITOMO METAL CORP·Filed 2014·Granted Oct 25, 2016·6 cites·6 claims
- 1681US8264006B2Compound semiconductor device including AIN layer of controlled skewnessIMANISHI KENJI·Filed 2010·Granted Sep 11, 2012·4 cites·5 claims
- 1778US9608083B2Semiconductor deviceFUJITSU LTD·Filed 2015·Granted Mar 28, 2017·2 cites·10 claims
- 1878US8030164B2Compound semiconductor structureFUJITSU LTD·Filed 2008·Granted Oct 4, 2011·4 cites·18 claims
- 1978US7838903B2Compound semiconductor device and the fabricating method of the sameFUJITSU LTD·Filed 2009·Granted Nov 23, 2010·4 cites·13 claims
- 2076US9933032B2Eddy-current retarding deviceNIPPON STEEL & SUMITOMO METAL CORP·Filed 2013·Granted Apr 3, 2018·3 cites·11 claims
- 2176US8426260B2Compound semiconductor device and method of manufacturing the sameMIYAJIMA TOYOO·Filed 2011·Granted Apr 23, 2013·5 cites·16 claims
- 2275US8507329B2Compound semiconductor device and method of manufacturing the sameKIKKAWA TOSHIHIDE·Filed 2012·Granted Aug 13, 2013·3 cites·7 claims
- 2374US9656643B2Retarding device using a fluidNIPPON STEEL & SUMITOMO METAL CORP·Filed 2013·Granted May 23, 2017·3 cites·8 claims
- 2471US8044492B2Compound semiconductor device including AIN layer of controlled skewnessFUJITSU LTD·Filed 2008·Granted Oct 25, 2011·2 cites·7 claims
- 2571US5610410AIII-V compound semiconductor device with Schottky electrode of increased barrier heightFUJITSU LTD·Filed 1995·Granted Mar 11, 1997·31 cites·18 claims
- 2670US9502525B2Compound semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2012·Granted Nov 22, 2016·2 cites·8 claims
- 2770US6399971B1Semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 1998·Granted Jun 4, 2002·23 cites·8 claims
- 2869US8581335B2Compound semiconductor device and manufacturing method thereofIMANISHI KENJI·Filed 2011·Granted Nov 12, 2013·2 cites·8 claims
- 2969US7663162B2Compound semiconductor device and doherty amplifier using compound semiconductor deviceFUJITSU LTD·Filed 2008·Granted Feb 16, 2010·2 cites·8 claims
- 3068US10734881B2Eddy current retarder with electricity generating functionNIPPON STEEL CORP·Filed 2019·Granted Aug 4, 2020·0 cites·4 claims
- 3166US8193539B2Compound semiconductor device using SiC substrate and its manufactureKIKKAWA TOSHIHIDE·Filed 2010·Granted Jun 5, 2012·1 cites·19 claims
- 3264US8466674B2Magnetic testing method and magnetic testing apparatusSUZUMA TOSHIYUKI·Filed 2009·Granted Jun 18, 2013·2 cites·8 claims
- 3364US7777251B2Compound semiconductor device and doherty amplifier using compound semiconductor deviceFUJITSU LTD·Filed 2009·Granted Aug 17, 2010·1 cites·3 claims
- 3463US12003160B2Eddy current deceleration deviceNIPPON STEEL CORP·Filed 2021·Granted Jun 4, 2024·0 cites·4 claims
- 3563US11255407B2Eddy current damperNIPPON STEEL CORP·Filed 2018·Granted Feb 22, 2022·2 cites·4 claims
- 3662US11979057B2Rotor for eddy current deceleration deviceNIPPON STEEL CORP·Filed 2020·Granted May 7, 2024·0 cites·2 claims
- 3762US8669592B2Compound semiconductor device and method for fabricating the sameMIYAJIMA TOYOO·Filed 2012·Granted Mar 11, 2014·1 cites·12 claims
- 3860US6417519B1Field effect transistor with suppressed threshold changeFUJITSU LTD·Filed 2000·Granted Jul 9, 2002·9 cites·11 claims
- 3958US5856209AMethod of making compound semiconductor device having a reduced resistanceFUJITSU LTD·Filed 1997·Granted Jan 5, 1999·19 cites·6 claims
- 4054US8969159B2Compound semiconductor device and manufacturing method thereofFUJITSU LTD·Filed 2013·Granted Mar 3, 2015·0 cites·12 claims
- 4153US8440549B2Compound semiconductor device including aln layer of controlled skewnessIMANISHI KENJI·Filed 2011·Granted May 14, 2013·0 cites·2 claims
- 4251US10012260B2Crankshaft for reciprocating engineNIPPON STEEL & SUMITOMO METAL CORP·Filed 2014·Granted Jul 3, 2018·0 cites·10 claims
- 4350US8264005B2Compound semiconductor device including AIN layer of controlled skewnessIMANISHI KENJI·Filed 2010·Granted Sep 11, 2012·0 cites·7 claims
- 4450US2009176352A1Semiconductor device, method of manufacturing the same, and substrate for manufacturing the sameEUDYNA DEVICES INC·Filed 2009·Application pending·0 cites
- 4549US10667334B2Eddy current heat generating apparatusNIPPON STEEL & SUMITOMO METAL CORP·Filed 2015·Granted May 26, 2020·0 cites·11 claims
- 4649US10247226B2Crankshaft for reciprocating engineNIPPON STEEL & SUMITOMO METAL CORP·Filed 2016·Granted Apr 2, 2019·0 cites·6 claims
- 4749US6867439B2Field-effect transistor using a group III-V compound semiconductorFUJITSU LTD·Filed 2001·Granted Mar 15, 2005·4 cites·14 claims
- 4848US11165326B2Eddy current decelerating apparatusNIPPON STEEL CORP·Filed 2019·Granted Nov 2, 2021·0 cites·4 claims
- 4948US2012091522A1Semiconductor device and manufacturing method thereofOZAKI SHIROU·Filed 2011·Application pending·0 cites
- 5048US2011297957A1Compound seminconductor structureKIKKAWA TOSHIHIDE·Filed 2011·Application pending·0 cites
Showing the top 50 of 81 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →