Compound seminconductor structure

Abstract

A method for manufacturing a compound semiconductor structure, includes (a) selecting a conductive SiC substrate in accordance with color and resistivity and (b) epitaxially growing a GaN series compound semiconductor layer on the selected conductive SiC substrate. The step (a) preferably selects a conductive SiC substrate whose main color is green, whose conductivity type is n-type and whose resistivity is 0.08 52 cm to 1×10 5 Ωcm, or whose main color is black, whose conductivity type is p-type and whose resistivity is 1×10 3 Ωcm to 1×10 5 Ωcm, or whose main color is blue, whose conductivity type is p-type and whose resistivity is 10 Ωcm to 1×10 5 Ωcm. The step (b) preferably includes (b-1) growing an AlInGaN layer having a thickness not thinner than 10 μm on the conductive SiC substrate by hydride VPE.

1 . A compound semiconductor structure comprising:
 a conductive SiC substrate whose main color is green, whose conductivity type is n-type and whose resistivity is 0.08 Ωcm to 1×10 5  Ωcm, or whose main color is black, whose conductivity type is p-type and whose resistivity is 1×10 3  Ωcm to 1×10 5  Ωcm, or whose main color is blue, whose conductivity type is p-type and whose resistivity is 10 Ωcm to 1×10 5  Ωcm; and   an AlInGaN layer having a thickness not thinner than 10 μm and formed on said conductive SiC substrate.   
     
     
         2 . The compound semiconductor structure according to  claim 1 , wherein said SiC substrate is green, and an absorption coefficient at a peak wavelength of an optical absorption band around 0.6 μm is not larger than two times of an absorption coefficient at a wavelength of 0.5 μm. 
     
     
         3 . The compound semiconductor structure according to  claim 1 , wherein said AlInGaN layer is an AlN layer. 
     
     
         4 . The compound semiconductor structure according to  claim 1 , wherein said AlInGaN layer contains Cl. 
     
     
         5 . The compound semiconductor structure according to  claim 1 , further comprising:
 an i-type GaN layer, an i-type AlGaN layer and an n-type AlGaN layer laminated on and above said AlInGaN layer.   
     
     
         6 . A compound semiconductor structure comprising:
 a conductive SiC substrate whose main color is green, whose conductivity type is n-type and whose resistivity is 0.08 Ωcm to 1×10 5  Ωcm, or whose main color is black, whose conductivity type is p-type and whose resistivity is 1×10 3  Ωcm to 1×10 5  Ωcm, or whose main color is blue, whose conductivity type is p-type and whose resistivity is 10 Ωcm to 1×10 5  Ωcm;   an AlInGaN layer having a thickness not thinner than 10 μm and formed on said conductive SiC substrate;   an i-type GaN layer, an i-type AlGaN layer and an n-type AlGaN layer laminated on and above said AlInGaN layer;   a pair of source/drain electrodes in ohmic contact with said n-type AlGaN layer;   an n-type GaN layer formed on said n-type AlGaN layer between said pair of source/drain electrodes;   an SiN film deposited on said n-type GaN layer;   an opening formed through said SiN film between said pair of source/drain electrodes; and   a gate electrode in Schottky contact with said n-type GaN layer via said opening.   
     
     
         7 . The compound semiconductor structure according to  claim 6 , wherein said SiC substrate is green, and an absorption coefficient at a peak wavelength of an optical absorption band around 0.6 μm is not larger than two times of an absorption coefficient at a wavelength of 0.5 μm. 
     
     
         8 . The compound semiconductor structure according to  claim 6 , wherein said AlInGaN layer is an AlN layer. 
     
     
         9 . The compound semiconductor structure according to  claim 6 , wherein said AlInGaN layer contains Cl.