Inventor · disambiguated record
Kensuke Yamaguchi
Also filed as: YAMAGUCHI KENSUKE
19 granted patents·2 pending applications·412 citations·filing 2002–2024
95Inventor score
Top patents by PatentIndex Score
21 records- 0198US10269620B2Multi-tier memory device with through-stack peripheral contact via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 23, 2019·34 cites·15 claims
- 0298US10249640B2Within-array through-memory-level via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 2, 2019·52 cites·27 claims
- 0398US10008570B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jun 26, 2018·62 cites·16 claims
- 0497US10490569B2Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openingsSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Nov 26, 2019·18 cites·17 claims
- 0597US10014316B2Three-dimensional memory device with leakage reducing support pillar structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 3, 2018·35 cites·23 claims
- 0696US10141331B1Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Nov 27, 2018·53 cites·22 claims
- 0796US9768270B2Method of selectively depositing floating gate material in a memory deviceSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 19, 2017·24 cites·7 claims
- 0896US9305937B1Bottom recess process for an outer blocking dielectric layer inside a memory openingSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·39 cites·45 claims
- 0995US10608010B2Three-dimensional memory device containing replacement contact via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Mar 31, 2020·28 cites·11 claims
- 1094US9601508B2Blocking oxide in memory opening integration scheme for three-dimensional memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Mar 21, 2017·11 cites·15 claims
- 1190US9716101B2Forming 3D memory cells after word line replacementSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 25, 2017·8 cites·11 claims
- 1288US12176203B2Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressantSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Dec 24, 2024·1 cites·4 claims
- 1388US9553100B2Selective floating gate semiconductor material deposition in a three-dimensional memory structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 24, 2017·8 cites·26 claims
- 1487US10916504B2Three-dimensional memory device including electrically conductive layers with molybdenum-containing linersSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Feb 9, 2021·5 cites·19 claims
- 1586US10546870B2Three-dimensional memory device containing offset column stairs and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jan 28, 2020·7 cites·14 claims
- 1676US6901685B2Method for drying washed objectsKAIJO KK·Filed 2003·Granted Jun 7, 2005·17 cites·6 claims
- 1768US6779534B2Apparatus and method for drying washed objectsKAIJO KK·Filed 2002·Granted Aug 24, 2004·10 cites·11 claims
- 1857US12217965B2Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressantSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Feb 4, 2025·0 cites·12 claims
- 1957US2025234553A1Method of selective bottom widening of high aspect ratio openings through a multi-layer stackSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 2051US2023223267A1Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressantSANDISK TECHNOLOGIES LLC·Filed 2022·Application pending·0 cites
- 2143US9368601B2Method for forming oxide below control gate in vertical channel thin film transistorSANDISK 3D LLC·Filed 2014·Granted Jun 14, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →