Inventor · disambiguated record
Kiejin Park
Also filed as: PARK KIEJIN
5 granted patents·8 pending applications·441 citations·filing 2010–2025
80Inventor score
Top patents by PatentIndex Score
13 records- 0197US8900999B1Low temperature high pressure high H2/WF6 ratio W process for 3D NAND applicationAPPLIED MATERIALS INC·Filed 2013·Granted Dec 2, 2014·423 cites·15 claims
- 0293US9169556B2Tungsten growth modulation by controlling surface compositionAPPLIED MATERIALS INC·Filed 2013·Granted Oct 27, 2015·9 cites·20 claims
- 0378US9938622B2Method to deposit CVD rutheniumAPPLIED MATERIALS INC·Filed 2016·Granted Apr 10, 2018·2 cites·20 claims
- 0476US8431033B2High density plasma etchback process for advanced metallization applicationsZHOU CHUNMING·Filed 2010·Granted Apr 30, 2013·7 cites·18 claims
- 0574US2024308856A1Silicon precursor materials, silicon-containing films, and related methodsENTEGRIS INC·Filed 2024·Application pending·0 cites
- 0673US12312688B2Precursors and related methodsENTEGRIS INC·Filed 2022·Granted May 27, 2025·0 cites·17 claims
- 0767US2025250676A1Precursors and related methodsENTEGRIS INC·Filed 2025·Application pending·0 cites
- 0867US2023080718A1Silicon precursor materials, silicon-containing films, and related methodsENTEGRIS INC·Filed 2022·Application pending·0 cites
- 0965US2025296944A1Silicon precursorsENTEGRIS INC·Filed 2025·Application pending·0 cites
- 1060US2024182498A1Disilylamine precursors and related methodsENTEGRIS INC·Filed 2023·Application pending·0 cites
- 1158US2023088079A1Silicon precursorsENTEGRIS INC·Filed 2022·Application pending·0 cites
- 1251US2014134351A1Method to deposit cvd rutheniumAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 1351US2024150380A1Silane precursors and related methodsENTEGRIS INC·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →