Inventor · disambiguated record
Kuo-In Chen
Also filed as: CHEN KUO-IN
32 granted patents·1 pending application·624 citations·filing 1995–2016
97Inventor score
Top patents by PatentIndex Score
33 records- 0198US5689128AHigh density trenched DMOS transistorSILICONIX INC·Filed 1995·Granted Nov 18, 1997·242 cites·7 claims
- 0297US7183610B2Super trench MOSFET including buried source electrode and method of fabricating the sameSILICONIX INC·Filed 2004·Granted Feb 27, 2007·118 cites·22 claims
- 0394US7557409B2Super trench MOSFET including buried source electrodeSILICONIX INC·Filed 2007·Granted Jul 7, 2009·26 cites·2 claims
- 0486US9437424B2High mobility power metal-oxide semiconductor field-effect transistorsPATTANAYAK DEVA·Filed 2008·Granted Sep 6, 2016·10 cites·4 claims
- 0586US6921697B2Method for making trench MIS device with reduced gate-to-drain capacitanceSILICONIX INC·Filed 2002·Granted Jul 26, 2005·31 cites·7 claims
- 0685US9425306B2Super junction trench power MOSFET devicesGAO YANG·Filed 2009·Granted Aug 23, 2016·12 cites·11 claims
- 0783US9443974B2Super junction trench power MOSFET device fabricationGAO YANG·Filed 2009·Granted Sep 13, 2016·11 cites·9 claims
- 0883US8368126B2Trench metal oxide semiconductor with recessed trench material and remote contactsVISHAY SILICONIX·Filed 2008·Granted Feb 5, 2013·11 cites·17 claims
- 0982US6882000B2Trench MIS device with reduced gate-to-drain capacitanceSILICONIX INC·Filed 2001·Granted Apr 19, 2005·24 cites·19 claims
- 1080US8409954B2Ultra-low drain-source resistance power MOSFETCHAU THE-TU·Filed 2006·Granted Apr 2, 2013·8 cites·7 claims
- 1180US6903412B2Trench MIS device with graduated gate oxide layerSILICONIX INC·Filed 2002·Granted Jun 7, 2005·21 cites·8 claims
- 1279US9431530B2Super-high density trench MOSFETXU ROBERT Q·Filed 2010·Granted Aug 30, 2016·5 cites·15 claims
- 1377US7012005B2Self-aligned differential oxidation in trenches by ion implantationSILICONIX INC·Filed 2002·Granted Mar 14, 2006·21 cites·6 claims
- 1477US6875657B2Method of fabricating trench MIS device with graduated gate oxide layerSILICONIX INC·Filed 2002·Granted Apr 5, 2005·17 cites·14 claims
- 1577US6709930B2Thicker oxide formation at the trench bottom by selective oxide depositionSILICONIX INC·Filed 2002·Granted Mar 23, 2004·24 cites·13 claims
- 1676US9419129B2Split gate semiconductor device with curved gate oxide profileGAO YANG·Filed 2009·Granted Aug 16, 2016·5 cites·13 claims
- 1775US7704836B2Method of fabricating super trench MOSFET including buried source electrodeSILICONIX INC·Filed 2008·Granted Apr 27, 2010·4 cites·7 claims
- 1873US8697571B2Power MOSFET contact metallizationVISHAY SILICONIX·Filed 2012·Granted Apr 15, 2014·3 cites·6 claims
- 1972US9761696B2Self-aligned trench MOSFET and method of manufactureVISHAY SILICONIX·Filed 2014·Granted Sep 12, 2017·3 cites·6 claims
- 2069US9947770B2Self-aligned trench MOSFET and method of manufactureLI JIAN·Filed 2008·Granted Apr 17, 2018·4 cites·7 claims
- 2169US9893168B2Split gate semiconductor device with curved gate oxide profileVISHAY SILICONIX·Filed 2016·Granted Feb 13, 2018·1 cites·9 claims
- 2268US6849898B2Trench MIS device with active trench corners and thick bottom oxideSILICONIX INC·Filed 2001·Granted Feb 1, 2005·11 cites·25 claims
- 2367US9425043B2High mobility power metal-oxide semiconductor field-effect transistorsPATTANAYAK DEVA·Filed 2006·Granted Aug 23, 2016·2 cites·5 claims
- 2467US9230810B2System and method for substrate wafer back side and edge cross section sealsLU HAMILTON·Filed 2010·Granted Jan 5, 2016·2 cites·2 claims
- 2562US9306056B2Semiconductor device with trench-like feed-throughsPATTANAYAK DEVA·Filed 2009·Granted Apr 5, 2016·2 cites·21 claims
- 2660US8883580B2Trench metal oxide semiconductor with recessed trench material and remote contactsVISHAY SILICONIX·Filed 2012·Granted Nov 11, 2014·1 cites·6 claims
- 2760US8471390B2Power MOSFET contact metallizationWONG RONALD·Filed 2007·Granted Jun 25, 2013·3 cites·11 claims
- 2857US9412833B2Narrow semiconductor trench structureCHAU THE-TU·Filed 2008·Granted Aug 9, 2016·1 cites·7 claims
- 2956US9685524B2Narrow semiconductor trench structureCHAU THE-TU·Filed 2006·Granted Jun 20, 2017·1 cites·2 claims
- 3054US2010019316A1Method of fabricating super trench MOSFET including buried source electrodeSILICONIX INC·Filed 2009·Application pending·0 cites
- 3151US10546750B2System and method for substrate wafer back side and edge cross section sealsVISHAY SILICONIX·Filed 2016·Granted Jan 28, 2020·0 cites·5 claims
- 3250US9887266B2Ultra-low drain-source resistance power MOSFETCHAU THE TU·Filed 2008·Granted Feb 6, 2018·0 cites·17 claims
- 3347US10032901B2Semiconductor device with trench-like feed-throughsVISHAY SILICONIX·Filed 2016·Granted Jul 24, 2018·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →