Inventor · disambiguated record
Kuo-Cheng Ching
Also filed as: CHING KUO-CHENG
347 granted patents·18 pending applications·5,818 citations·filing 2008–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD312TAIWAN SEMICONDUCTOR MFG43CHING KUO-CHENG4COLINGE JEAN-PIERRE1PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC1
Top patents by PatentIndex Score
365 records- 0199US10157799B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 18, 2018·135 cites·20 claims
- 0299US9887269B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 6, 2018·151 cites·20 claims
- 0399US9881993B2Method of forming semiconductor structure with horizontal gate all around structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 30, 2018·143 cites·19 claims
- 0499US9818872B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 14, 2017·166 cites·18 claims
- 0599US9608116B2FINFETs with wrap-around silicide and method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 28, 2017·1.3k cites·20 claims
- 0699US9449975B1FinFET devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·27 cites·20 claims
- 0799US9418897B1Wrap around silicide for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 16, 2016·239 cites·20 claims
- 0899US9412828B2Aligned gate-all-around structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·749 cites·19 claims
- 0999US9209247B2Self-aligned wrapped-around structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 8, 2015·782 cites·20 claims
- 1099US9184269B2Silicon and silicon germanium nanowire formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 10, 2015·39 cites·20 claims
- 1198US11502187B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 15, 2022·3 cites·20 claims
- 1298US11387237B2Semiconductor component having a fin and an epitaxial contact structure over an epitaxial layer thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·4 cites·20 claims
- 1398US11355611B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·4 cites·20 claims
- 1498US10211307B2Methods of manufacturing inner spacers in a gate-all-around (GAA) FET through multi-layer spacer replacementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 19, 2019·22 cites·20 claims
- 1598US10164012B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·32 cites·16 claims
- 1698US10026737B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 17, 2018·17 cites·20 claims
- 1798US9991262B1Semiconductor device on hybrid substrate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 5, 2018·24 cites·20 claims
- 1898US9935199B2FinFET with source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 3, 2018·27 cites·20 claims
- 1998US9634091B2Silicon and silicon germanium nanowire formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·28 cites·20 claims
- 2098US9559184B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·24 cites·20 claims
- 2198US9478624B2Self-aligned wrapped-around structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 25, 2016·31 cites·20 claims
- 2298US9006786B2Fin structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 14, 2015·48 cites·20 claims
- 2398US8901607B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·60 cites·20 claims
- 2498US8633516B1Source/drain stack stressor for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jan 21, 2014·200 cites·20 claims
- 2597US11942548B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·3 cites·20 claims
- 2697US11894275B2FinFET device having oxide region between vertical fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·2 cites·20 claims
- 2797US10833003B1Integrated circuits with backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·14 cites·20 claims
- 2897US10483378B2Epitaxial features confined by dielectric fins and spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·12 cites·20 claims
- 2997US10181426B1Etch profile control of polysilicon structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 15, 2019·15 cites·20 claims
- 3097US10163729B2Silicon and silicon germanium nanowire formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·14 cites·20 claims
- 3197US10164069B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·13 cites·20 claims
- 3297US9935016B2Silicon and silicon germanium nanowire formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 3, 2018·15 cites·20 claims
- 3397US9911824B2Semiconductor structure with multi spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 6, 2018·20 cites·20 claims
- 3497US9773705B2FinFET channel on oxide structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 26, 2017·12 cites·20 claims
- 3597US9634127B2FinFET device and method for fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 25, 2017·16 cites·20 claims
- 3697US9559181B2Structure and method for FinFET device with buried sige oxideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 31, 2017·20 cites·20 claims
- 3797US9461110B1FETs and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·18 cites·20 claims
- 3897US9318606B2FinFET device and method of fabricating sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 19, 2016·23 cites·18 claims
- 3997US9209185B2Method and structure for FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 8, 2015·23 cites·20 claims
- 4097US9171843B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 27, 2015·23 cites·20 claims
- 4197US9006842B2Tuning strain in semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 14, 2015·26 cites·20 claims
- 4297US8815691B2Method of fabricating a gate all around deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 26, 2014·37 cites·20 claims
- 4397US8680576B2CMOS device and method of forming the sameCHING KUO-CHENG·Filed 2012·Granted Mar 25, 2014·198 cites·19 claims
- 4496US10998238B2Integrated circuits with buried interconnect conductorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 4, 2021·11 cites·7 claims
- 4596US10910375B2Semiconductor device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 2, 2021·8 cites·20 claims
- 4696US10529833B2Integrated circuit with a fin and gate structure and method making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·11 cites·20 claims
- 4796US10510874B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·9 cites·20 claims
- 4896US9917178B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 13, 2018·10 cites·20 claims
- 4996US9716096B1Semiconductor structure with feature spacer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 25, 2017·16 cites·20 claims
- 5096US9443856B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·12 cites·20 claims
Showing the top 50 of 365 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →