Inventor · disambiguated record
Kwame Eason
Also filed as: EASON KWAME · EASON KWAME N · EASON KWAME NKRUMAH
5 granted patents·6 pending applications·20 citations·filing 2001–2023
76Inventor score
Top patents by PatentIndex Score
11 records- 0189US11011388B2Plasma apparatus for high aspect ratio selective lateral etch using cyclic passivation and etchingLAM RES CORP·Filed 2019·Granted May 18, 2021·7 cites·18 claims
- 0286US10147588B2System and method for increasing electron density levels in a plasma of a substrate processing systemLAM RES CORP·Filed 2017·Granted Dec 4, 2018·5 cites·19 claims
- 0383US10283615B2Ultrahigh selective polysilicon etch with high throughputNOVELLUS SYSTEMS INC·Filed 2015·Granted May 7, 2019·4 cites·15 claims
- 0481US11469079B2Ultrahigh selective nitride etch to form FinFET devicesLAM RES CORP·Filed 2017·Granted Oct 11, 2022·3 cites·13 claims
- 0569US10276398B2High aspect ratio selective lateral etch using cyclic passivation and etchingLAM RES CORP·Filed 2017·Granted Apr 30, 2019·1 cites·21 claims
- 0666US2023084901A1Ultrahigh selective nitride etch to form finfet devicesLAM RES CORP·Filed 2022·Application pending·0 cites
- 0762US2023402389A1Integrated word line contact structures in three-dimensional (3d) memory arrayINTEL CORP·Filed 2023·Application pending·0 cites
- 0852US2019221654A1Ultrahigh selective polysilicon etch with high throughputNOVELLUS SYSTEMS INC·Filed 2019·Application pending·0 cites
- 0947US2021143100A1Integrated word line contact structures in three-dimensional (3d) memory arrayINTEL CORP·Filed 2019·Application pending·0 cites
- 1039US2003157773A1Semiconductor device having a dielectric layer with a uniform nitrogen profileFiled 2003·Application pending·0 cites
- 1137US2003080389A1Semiconductor device having a dielectric layer with a uniform nitrogen profileFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →