Inventor · disambiguated record
Kwanyong Lim
Also filed as: LIM KWANYONG
12 granted patents·13 pending applications·9 citations·filing 2014–2023
83Inventor score
Top patents by PatentIndex Score
25 records- 0185US11296083B2Three-dimensional (3D), vertically-integrated field-effect transistors (FETs) electrically coupled by integrated vertical FET-to-FET interconnects for complementary metal-oxide semiconductor (CMOS) cell circuitsQUALCOMM INC·Filed 2020·Granted Apr 5, 2022·2 cites·26 claims
- 0282US10950488B2Integration of finFET deviceTEXAS INSTRUMENTS INC·Filed 2019·Granted Mar 16, 2021·2 cites·15 claims
- 0382US9847333B2Reducing risk of punch-through in FinFET semiconductor structureGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 19, 2017·4 cites·12 claims
- 0474US11145654B2Field effect transistor (FET) comprising channels with silicon germanium (SiGe)QUALCOMM INC·Filed 2019·Granted Oct 12, 2021·1 cites·34 claims
- 0563US12506035B2Self-aligned source/drain contact structure and method of manufacturing the sameQUALCOMM INC·Filed 2023·Granted Dec 23, 2025·0 cites·30 claims
- 0662US12457783B2Selective contact on source and drainQUALCOMM INC·Filed 2023·Granted Oct 28, 2025·0 cites·29 claims
- 0761US12513955B2Transistors having different channel lengths and comparable source/drain spacesQUALCOMM INC·Filed 2023·Granted Dec 30, 2025·0 cites·23 claims
- 0859US11444201B2Leakage current reduction in polysilicon-on-active-edge structuresQUALCOMM INC·Filed 2020·Granted Sep 13, 2022·0 cites·18 claims
- 0955US2015171217A1Design and integration of finfet deviceTEXAS INSTRUMENTS INC·Filed 2014·Application pending·0 cites
- 1054US2025133772A1Bottom channel trench isolated gate all around (gaa) field effect transistor (fet)QUALCOMM INC·Filed 2023·Application pending·0 cites
- 1154US2018108564A1Design and integration of finfet deviceTEXAS INSTRUMENTS INC·Filed 2017·Application pending·0 cites
- 1254US2025185297A1Metal gate recess stop for gate-all-around field effect transistorsQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1354US2024321860A1Row cell circuits with abrupt diffusion region width transitionsQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1453US10854510B2Titanium silicide formation in a narrow source-drain contactGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 1, 2020·0 cites·20 claims
- 1553US9779987B2Titanium silicide formation in a narrow source-drain contactGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 3, 2017·0 cites·16 claims
- 1650US10600774B2Systems and methods for fabrication of gated diodes with selective epitaxial growthQUALCOMM INC·Filed 2018·Granted Mar 24, 2020·0 cites·21 claims
- 1749US11075206B2SRAM source-drain structureQUALCOMM INC·Filed 2018·Granted Jul 27, 2021·0 cites·17 claims
- 1846US2022216328A1Gate-to-contact short prevention with an inner spacerQUALCOMM INC·Filed 2021·Application pending·0 cites
- 1945US2021398972A1INTEGRATING A GATE-ALL-AROUND (GAA) TRANSISTOR WITH A SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)QUALCOMM INC·Filed 2020·Application pending·0 cites
- 2044US2016049401A1Hybrid contacts for commonly fabricated semiconductor devices using same metalGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 2144US2021313326A1Transistors in a layered arrangementQUALCOMM INC·Filed 2020·Application pending·0 cites
- 2242US2020251473A1High density fin field-effect transistor (finfet)QUALCOMM INC·Filed 2019·Application pending·0 cites
- 2342US2021143153A1Fin field-effect transistor (fet) (finfet) circuits employing replacement n-type fet (nfet) source/drain (s/d) to avoid or prevent short defects and related methods of fabricationQUALCOMM INC·Filed 2019·Application pending·0 cites
- 2437US2020256915A1Inline monitoring test structureQUALCOMM INC·Filed 2019·Application pending·0 cites
- 2535US2017358585A1Method, apparatus and system for fabricating self-aligned contact using block-type hard maskGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →