Inventor · disambiguated record
Kyu-Tae Na
Also filed as: NA KYU T · NA KYU-TAE
16 granted patents·9 pending applications·96 citations·filing 2003–2013
92Inventor score
Top patents by PatentIndex Score
25 records- 0185US8673723B1Methods of forming isolation regions for FinFET semiconductor devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 18, 2014·8 cites·10 claims
- 0283US7332409B2Methods of forming trench isolation layers using high density plasma chemical vapor depositionSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 19, 2008·13 cites·13 claims
- 0382US7601588B2Method of forming a trench isolation layer and method of manufacturing a non-volatile memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 13, 2009·12 cites·17 claims
- 0482US7517817B2Method for forming a silicon oxide layer using spin-on glassSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 14, 2009·7 cites·13 claims
- 0580US7192891B2Method for forming a silicon oxide layer using spin-on glassSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 20, 2007·21 cites·47 claims
- 0678US7410915B2Method of forming carbon polymer film using plasma CVDASM JAPAN·Filed 2006·Granted Aug 12, 2008·6 cites·40 claims
- 0767US8017495B2Method of forming isolation layer structure and method of manufacturing a semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Sep 13, 2011·2 cites·20 claims
- 0867US7598177B2Methods of filling trenches using high-density plasma deposition (HDP)SAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 6, 2009·2 cites·22 claims
- 0967US7585786B2Methods of forming spin-on-glass insulating layers in semiconductor devices and associated semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 8, 2009·11 cites·18 claims
- 1066US7560383B2Method of forming a thin layer and method of manufacturing a non-volatile semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 14, 2009·2 cites·27 claims
- 1163US8237240B2Isolation layer structure, method of forming the same and method of manufacturing a semiconductor device including the sameKIM JU-WAN·Filed 2011·Granted Aug 7, 2012·2 cites·13 claims
- 1262US7745305B2Method of removing an oxide and method of filling a trench using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 29, 2010·1 cites·15 claims
- 1359US7358190B2Methods of filling gaps by deposition on materials having different deposition ratesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 15, 2008·6 cites·7 claims
- 1453US7056827B2Methods of filling trenches using high-density plasma deposition (HDP)SAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 6, 2006·3 cites·26 claims
- 1548US2007065597A1Plasma CVD film formation apparatus provided with maskSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 1647US2009012221A1Compositions including perhydro-polysilazane used in a semiconductor manufacturing processSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1745US2006102940A1Semiconductor device having a photodetector and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 1844US2008179746A1Wiring structures of semiconductor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1942US7534698B2Methods of forming semiconductor devices having multilayer isolation structuresSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 19, 2009·0 cites·28 claims
- 2041US2007020879A1Method of forming an isolation layer and method of manufacturing a field effect transistor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2140US2006089008A1Methods of manufacturing silicon oxide isolation layers and semiconductor devices that include such isolation layersHONG EUNKEE·Filed 2005·Application pending·0 cites
- 2240US2007004139A1Method of manufacturing a non-volatile semiconductor deviceKIM HONG-GUN·Filed 2006·Application pending·0 cites
- 2339US2006068599A1Methods of forming a thin layer for a semiconductor device and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 2437US2004169283A1Integrated circuit devices and methods of forming the same that have a low dielectric insulating interlayer between conductive structuresFiled 2004·Application pending·0 cites
- 2531US8563429B2Methods of forming a metal silicide layer for semiconductor devicesHUR WON-GOO·Filed 2010·Granted Oct 22, 2013·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →