Inventor · disambiguated record
Kyo-Min Sohn
Also filed as: SOHN KYO-MIN
44 granted patents·3 pending applications·269 citations·filing 1999–2022
98Inventor score
Top patents by PatentIndex Score
47 records- 0198US9831003B2Device and method for repairing memory cell and memory system including the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 28, 2017·30 cites·20 claims
- 0298US9640233B2Semiconductor memory device having inverting circuit and controlling method there ofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 2, 2017·37 cites·19 claims
- 0394US9087613B2Device and method for repairing memory cell and memory system including the deviceSOHN KYO-MIN·Filed 2013·Granted Jul 21, 2015·18 cites·22 claims
- 0491US9727409B2Device and system including adaptive repair circuitSHIN SANG-HOON·Filed 2015·Granted Aug 8, 2017·9 cites·20 claims
- 0588US9087592B2Semiconductor memory deviceSOHN KYO-MIN·Filed 2013·Granted Jul 21, 2015·8 cites·23 claims
- 0688US8018245B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Sep 13, 2011·8 cites·11 claims
- 0788US6313694B1Internal power voltage generating circuit having a single drive transistor for stand-by and active modesSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 6, 2001·50 cites·3 claims
- 0887US10846169B2Semiconductor memory devices, memory systems and methods of operating semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 24, 2020·7 cites·20 claims
- 0987US9659669B2Device and method for repairing memory cell and memory system including the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 23, 2017·6 cites·13 claims
- 1083US10347355B2Device and method for repairing memory cell and memory system including the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 9, 2019·4 cites·20 claims
- 1182USRE50078EDevice and system including adaptive repair circuitSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 13, 2024·1 cites·38 claims
- 1281US9859022B2Memory device having a shareable error correction code cell arraySAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 2, 2018·4 cites·20 claims
- 1378US11049584B2Integrated circuit memory devices having buffer dies and test interface circuits therein that support testing and methods of testing sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 29, 2021·2 cites·20 claims
- 1478US9390780B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 12, 2016·3 cites·9 claims
- 1577US8495437B2Semiconductor memory deviceSOHN KYO-MIN·Filed 2012·Granted Jul 23, 2013·6 cites·20 claims
- 1675US9336906B2Semiconductor memory devices including redundancy memory cellsLEE YUN-YOUNG·Filed 2014·Granted May 10, 2016·4 cites·10 claims
- 1774US9287009B2Repair circuit and fuse circuitSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 15, 2016·4 cites·20 claims
- 1874US8299831B2Semiconductor deviceSOHN KYO-MIN·Filed 2011·Granted Oct 30, 2012·4 cites·10 claims
- 1973US10678631B2Device and system including adaptive repair circuitSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 9, 2020·1 cites·20 claims
- 2072US10296414B2Device and system including adaptive repair circuitSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 21, 2019·1 cites·20 claims
- 2170US10818375B2Semiconductor memory devices, memory systems and methods of operating semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 27, 2020·2 cites·20 claims
- 2269US6618299B2Semiconductor memory device with redundancySAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 9, 2003·17 cites·13 claims
- 2368US9589674B2Method of operating memory device and methods of writing and reading data in memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 7, 2017·3 cites·17 claims
- 2465US11817174B2Memory system for access concentration decrease management and access concentration decrease methodSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 14, 2023·0 cites·17 claims
- 2565US10014037B2Semiconductor memory package including memory device with inverting circuitSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 3, 2018·1 cites·20 claims
- 2660US9171605B1Concentrated address detecting method of semiconductor device and concentrated address detecting circuit using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 27, 2015·1 cites·22 claims
- 2760US6483770B2Synchronous semiconductor memory device and method for operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 19, 2002·11 cites·17 claims
- 2859US10468092B2Memory device for controlling refresh operation by using cell characteristic flagsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 5, 2019·1 cites·20 claims
- 2957US10529395B2Memory system for access concentration decrease management and access concentration decrease methodSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 7, 2020·0 cites·19 claims
- 3056US9460766B2Memory device, and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 4, 2016·1 cites·20 claims
- 3156US6826088B2Method and integrated circuit capable of reading and writing data simultaneouslySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 30, 2004·4 cites·32 claims
- 3254US6456551B2Semiconductor memory device having prefetch operation mode and data transfer method for reducing the number of main data linesSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 24, 2002·8 cites·20 claims
- 3354US2022207334A1Neural network device including convolution sram and diagonal accumulation sramSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 3451US2023236732A1Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3549US10242731B2Memory device for controlling refresh operation by using cell characteristic flagsHYUN KI HO·Filed 2015·Granted Mar 26, 2019·1 cites·20 claims
- 3648US9858981B2Semiconductor memory devices including redundancy memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 2, 2018·0 cites·17 claims
- 3747US9524770B2Semiconductor memory devices including redundancy memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 20, 2016·0 cites·20 claims
- 3847US7848164B2Semiconductor memory device having redundancy memory block and cell array structure thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 7, 2010·1 cites·18 claims
- 3946US6271718B1Internal voltage converter for low operating voltage semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Aug 7, 2001·2 cites·14 claims
- 4044US11024352B2Memory system for access concentration decrease management and access concentration decrease methodSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 1, 2021·0 cites·9 claims
- 4143US7546491B2Semiconductor memory device with standby current failure judging function and method for judging standby current failureSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 9, 2009·3 cites·25 claims
- 4242US9941247B2Stack semiconductor device and memory device with driving circuits connected to through-silicon-vias (TSV) in different substrates in a staggered mannerSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 10, 2018·0 cites·20 claims
- 4340US7193903B2Method of controlling an integrated circuit capable of simultaneously performing a data read operation and a data write operationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 20, 2007·2 cites·17 claims
- 4439US10672445B2Memory device including local support for target data searching and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 2, 2020·0 cites·19 claims
- 4538US6150873AInternal voltage converter for low operating voltage semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 21, 2000·4 cites·14 claims
- 4637US2017162545A1Stacked semiconductor device and a method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
- 4734US7415590B2Integrated circuit having a memory cell array capable of simultaneously performing a data read operation and a data write operationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 19, 2008·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →