Inventor · disambiguated record
Leslie G. Jerde
Also filed as: JERDE LESLIE · JERDE LESLIE G
17 granted patents·1 pending application·360 citations·filing 1979–2008
95Inventor score
Top patents by PatentIndex Score
18 records- 0196US4491499AOptical emission end point detectorAT & T TECHNOLOGIES INC·Filed 1984·Granted Jan 1, 1985·81 cites·12 claims
- 0287US4253907AAnisotropic plasma etchingWESTERN ELECTRIC CO·Filed 1979·Granted Mar 3, 1981·55 cites·32 claims
- 0386US6354240B1Plasma etch reactor having a plurality of magnetsTEGAL CORP·Filed 1998·Granted Mar 12, 2002·57 cites·26 claims
- 0479US7439188B2Reactor with heated and textured electrodes and surfacesTEGAL CORP·Filed 2001·Granted Oct 21, 2008·23 cites·12 claims
- 0579US6391148B2Cobalt silicide etch process and apparatusTEGAL CORP·Filed 2001·Granted May 21, 2002·21 cites·17 claims
- 0676US7223699B2Plasma etch reactor and methodTEGAL CORP·Filed 2005·Granted May 29, 2007·3 cites·20 claims
- 0768US6620335B1Plasma etch reactor and methodTEGAL CORP·Filed 1999·Granted Sep 16, 2003·23 cites·19 claims
- 0867US6905969B2Plasma etch reactor and methodTEGAL CORP·Filed 2002·Granted Jun 14, 2005·7 cites·17 claims
- 0966US6406925B1Method and apparatus for minimizing semiconductor wafer arcing during semiconductor wafer processingTEGAL CORP·Filed 2000·Granted Jun 18, 2002·9 cites·10 claims
- 1060US6774046B2Method for minimizing the critical dimension growth of a feature on a semiconductor waferTEGAL CORP·Filed 2001·Granted Aug 10, 2004·6 cites·16 claims
- 1158US6958295B1Method for using a hard mask for critical dimension growth containmentTEGAL CORP·Filed 2000·Granted Oct 25, 2005·5 cites·36 claims
- 1257US6287975B1Method for using a hard mask for critical dimension growth containmentTEGAL CORP·Filed 1998·Granted Sep 11, 2001·21 cites·7 claims
- 1355US6346428B1Method and apparatus for minimizing semiconductor wafer arcing during semiconductor wafer processingTEGAL CORP·Filed 1998·Granted Feb 12, 2002·17 cites·26 claims
- 1454US2008318432A1Reactor with heated and textured electrodes and surfacesTEGAL CORP·Filed 2008·Application pending·0 cites
- 1551US6500314B1Plasma etch reactor and methodTEGAL CORP·Filed 1996·Granted Dec 31, 2002·11 cites·61 claims
- 1649US6046116AMethod for minimizing the critical dimension growth of a feature on a semiconductor waferTEGAL CORP·Filed 1997·Granted Apr 4, 2000·15 cites·37 claims
- 1740US6951820B2Method for using a hard mask for critical dimension growth containmentSILICON VALLEY BANK·Filed 2001·Granted Oct 4, 2005·0 cites·10 claims
- 1838US6486069B1Cobalt silicide etch process and apparatusTEGAL CORP·Filed 1999·Granted Nov 26, 2002·6 cites·38 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →