Reactor with heated and textured electrodes and surfaces

Abstract

A reactor for processing semiconductor wafers with electrodes and other surfaces that can be one of heated, textured and/or pre-coated in order to facilitate adherence of materials deposited thereon, and eliminate the disadvantages resulting from the spaulding, flaking and/or delaminating of such materials which can interfere with semiconductor wafer processing.

1 . A reactor which uses process gasses, said reactor comprising:
 a reactor chamber;   an upper electrode located in said reactor chamber;   a heater to heat said upper electrode to a de-absorption temperature sufficient to de-absorb non-metal deposits from the upper electrode but insufficient to de-absorb metals deposits form the upper electrode.   
     
     
         2 . The reactor of  claim 1  wherein:
 said heater is incorporated into said electrode.   
     
     
         3 . The reactor of  claim 1  wherein:
 a chuck located in said reactor chamber; and   a lower electrode associated with said chuck.   
     
     
         4 . The reactor of  claim 1  wherein:
 said electrode is comprised of aluminum and the heater can heat the electrode to a maximum temperature of about 300° C. to about 350° C.   
     
     
         5 . The reactor of  claim 1  wherein:
 said electrode is comprised of graphite and the heater can heat the electrode to a maximum temperature of about 400° C. to about 500° C.   
     
     
         6 . The reactor of  claim 1  wherein:
 said electrode is comprised of silicon and the heater can heat the electrode to a maximum temperature of about 400° C. to about 500° C.   
     
     
         7 . The reactor of  claim 1  wherein:
 said reactor is adapted for etch processing.   
     
     
         8 . The reactor of  claim 1  wherein said upper electrode is precoated with a film adhesion promoter. 
     
     
         9 . The reactor of  claim 8  wherein said film adhesion promoter includes one or both of titanium (Ti) and titanium nitride (TiN). 
     
     
         10 . A reactor which uses process gasses, said reactor comprising:
 a reactor chamber; and   an upper electrode located in said reactor chamber, said upper electrode being at ground;   said upper electrode having a texture that encourages deposits to adhere to the surface of the upper electrode, the texture comprised of a plurality of shaped features, each of the shaped features having a predetermined shape.   
     
     
         11 . The reactor of  claim 10  wherein:
 said reactor is adapted for etch processing.   
     
     
         12 . The reactor of  claim 10  wherein said upper electrode is textured in an irregular pattern. 
     
     
         13 . The reactor of  claim 10  wherein said upper electrode has a texture comprised of a plurality of scalloped features, and wherein the scalloped features are at least one of concave scallops and convex scallops. 
     
     
         14 . The reactor of  claim 10  wherein said upper electrode is textured so that the plurality of shaped features defines a multiplicity of shaped peaks and a multiplicity of shaped valleys. 
     
     
         15 . The reactor of  claim 14  wherein:
 there is an average peak to peak width and an average valley depth;   an aspect ratio is defined as the average peak to peak width divided by the mean valley depth; and   the aspect ratio is chosen in order to maximize the formation of a deposit on the surface of the electrode which will cause good adherence of the by-products of the reaction carried on in the reactor onto the surface of the electrode.   
     
     
         16 . The reactor of  claim 10  wherein said electrode is precoated with a film adhesion promoter. 
     
     
         17 . The reactor of  claim 16  wherein said film adhesion promoter includes at least one of titanium (Ti), titanium nitride (TiN), platinum (Pt), iridium (Ir), iridium oxide (IrO 2 ), barium strontium titanate (BST), strontium bismuth tantalate (SBT), strontium titanate (STO), ruthenium (Ru), ruthenium oxide (RuO 2 ), and lead zirconium titanate (PZT). 
     
     
         18 . A reactor which uses process gases, said reactor comprising:
 a reactor chamber including an internal surface with a pre-coating of an adhesion promoter;   wherein the adhesion promoter encourages the development of durable deposits thereon which will be less likely to interfere with the deposit of a film on a workpiece.   
     
     
         19 . The reactor of  claim 18  wherein said film adhesion promoter includes one of titanium (Ti), titanium nitride (TiN), platinum (Pt), iridium (Ir), iridium oxide (IrO 2 ), barium strontium titanate (BST), strontium bismuth tantalate (SBT), strontium titanate (STO), ruthenium (Ru), ruthenium oxide (RuO 2 ), and lead zirconium titanate (PZT). 
     
     
         20 . A method of operating a reactor which comprises a reactor chamber, an upper electrode, a heater that heats said upper electrode, and gas inlets and outlets, the method comprising:
 introducing process gas into said reactor chamber, the process gas including one or both of oxygen and chlorine;   performing a platinum etch process in said reactor chamber; and   heating the upper electrode with said heater to a temperature capable of decomposing one or both of platinum chloride and platinum dioxide so that a layer of material formed on the upper electrode during the platinum etch process comprises mostly platinum; and   wherein the upper electrode comprises one or both of silicon and graphite and the upper electrode is heated to a temperature ranging from 400° C. to 500° C.   
     
     
         21 . The method of  claim 21 , wherein the layer of material formed on the upper electrode is more stable than a layer of material formed when heating the upper electrode with said heater to a temperature insufficient to decompose the one or both of platinum chloride and platinum dioxide. 
     
     
         22 . A method of operating a reactor which comprises a reactor chamber, an upper electrode, a heater that heats said upper electrode, and gas inlets and outlets, the method comprising:
 introducing process gas into said reactor chamber, the process gas including one or both of oxygen and chlorine;   performing a platinum etch process in said reactor chamber; and   heating the upper electrode with said heater to a temperature capable of decomposing one or both of platinum chloride and platinum dioxide so that a layer of material formed on the upper electrode during the platinum etch process comprises mostly platinum.   
     
     
         23 . The method of  claim 22 , wherein the layer of material formed on the upper electrode is more stable than a layer of material formed when heating the upper electrode with said heater to a temperature insufficient to decompose the one or both of platinum chloride and platinum dioxide.