Inventor · disambiguated record
Lin Cheng
Also filed as: CHENG LIN · CHENG LIN MING
47 granted patents·5 pending applications·257 citations·filing 1995–2021
98Inventor score
Files withCREE INC26CHENG LIN9DHAR SARIT3SHENZHEN GODO CULTURAL ORIGINALITY CO LTD3POWER INTEGRATIONS INC2
Top patents by PatentIndex Score
52 records- 0193US9142668B2Field effect transistor devices with buried well protection regionsCREE INC·Filed 2013·Granted Sep 22, 2015·11 cites·12 claims
- 0292US9741842B2Vertical power transistor deviceCREE INC·Filed 2016·Granted Aug 22, 2017·6 cites·20 claims
- 0392US9484413B2Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctionsCREE INC·Filed 2014·Granted Nov 1, 2016·9 cites·19 claims
- 0492US9318597B2Layout configurations for integrating schottky contacts into a power transistor deviceCREE INC·Filed 2013·Granted Apr 19, 2016·15 cites·10 claims
- 0590US9012984B2Field effect transistor devices with regrown p-layersCREE INC·Filed 2013·Granted Apr 21, 2015·12 cites·9 claims
- 0690US7638379B2Vertical-channel junction field-effect transistors having buried gates and methods of makingSEMISOUTH LAB INC·Filed 2007·Granted Dec 29, 2009·16 cites·14 claims
- 0789US10784338B2Field effect transistor devices with buried well protection regionsCREE INC·Filed 2018·Granted Sep 22, 2020·3 cites·20 claims
- 0889US9331197B2Vertical power transistor deviceCREE INC·Filed 2013·Granted May 3, 2016·7 cites·25 claims
- 0987US9142662B2Field effect transistor devices with low source resistanceRYU SEI-HYUNG·Filed 2011·Granted Sep 22, 2015·11 cites·25 claims
- 1087US9029945B2Field effect transistor devices with low source resistanceRYU SEI-HYUNG·Filed 2011·Granted May 12, 2015·11 cites·23 claims
- 1187US8384182B2Junction barrier schottky rectifiers having epitaxially grown P+-N methods of makingPOWER INTEGRATIONS INC·Filed 2008·Granted Feb 26, 2013·9 cites·26 claims
- 1285USRE49913EVertical power transistor deviceWOLFSPEED INC·Filed 2020·Granted Apr 9, 2024·1 cites·38 claims
- 1384US9972677B2Methods of forming power semiconductor devices having superjunction structures with pillars having implanted sidewallsCREE INC·Filed 2016·Granted May 15, 2018·3 cites·20 claims
- 1484US9306061B2Field effect transistor devices with protective regionsCREE INC·Filed 2013·Granted Apr 5, 2016·7 cites·14 claims
- 1583US9515199B2Power semiconductor devices having superjunction structures with implanted sidewallsCREE INC·Filed 2015·Granted Dec 6, 2016·3 cites·20 claims
- 1682US10134834B2Field effect transistor devices with buried well protection regionsCREE INC·Filed 2016·Granted Nov 20, 2018·2 cites·17 claims
- 1780USD974166SBox for storage macaronCHENG LIN·Filed 2021·Granted Jan 3, 2023·7 cites·1 claims
- 1880US9425265B2Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structureCREE INC·Filed 2013·Granted Aug 23, 2016·4 cites·14 claims
- 1980US8928074B2Vertical junction field effect transistors and diodes having graded doped regions and methods of makingCHENG LIN·Filed 2012·Granted Jan 6, 2015·4 cites·23 claims
- 2079US9240476B2Field effect transistor devices with buried well regions and epitaxial layersCREE INC·Filed 2013·Granted Jan 19, 2016·5 cites·7 claims
- 2179US8169022B2Vertical junction field effect transistors and diodes having graded doped regions and methods of makingCHENG LIN·Filed 2010·Granted May 1, 2012·4 cites·47 claims
- 2277USD910900SDog shaped light with speakerSHENZHEN GODO CULTURAL ORIGINALITY CO LTD·Filed 2020·Granted Feb 16, 2021·7 cites·1 claims
- 2377USRE48380EVertical power transistor deviceCREE INC·Filed 2018·Granted Jan 5, 2021·1 cites·32 claims
- 2476USD911835SFolding gift boxCHENG LIN·Filed 2019·Granted Mar 2, 2021·15 cites·1 claims
- 2576US8587024B2Vertical junction field effect transistors and bipolar junction transistorsCHENG LIN·Filed 2012·Granted Nov 19, 2013·3 cites·18 claims
- 2674US9396946B2Wet chemistry processes for fabricating a semiconductor device with increased channel mobilityDHAR SARIT·Filed 2011·Granted Jul 19, 2016·3 cites·30 claims
- 2774US9111919B2Field effect device with enhanced gate dielectric structureCREE INC·Filed 2013·Granted Aug 18, 2015·3 cites·29 claims
- 2873US10950719B2Seminconductor device with spreading layerCREE INC·Filed 2014·Granted Mar 16, 2021·2 cites·26 claims
- 2972US9570585B2Field effect transistor devices with buried well protection regionsCREE INC·Filed 2015·Granted Feb 14, 2017·1 cites·13 claims
- 3071US9269580B2Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereofDHAR SARIT·Filed 2011·Granted Feb 23, 2016·2 cites·72 claims
- 3171US9064738B2Methods of forming junction termination extension edge terminations for high power semiconductor devices and related semiconductor devicesCREE INC·Filed 2013·Granted Jun 23, 2015·2 cites·25 claims
- 3270USD875993SBird table lampSHENZHEN GODO CULTURAL ORIGINALITY CO LTD·Filed 2018·Granted Feb 18, 2020·12 cites·1 claims
- 3367US9570570B2Enhanced gate dielectric for a field effect device with a trenched gateCREE INC·Filed 2013·Granted Feb 14, 2017·2 cites·21 claims
- 3467US9349797B2SiC devices with high blocking voltage terminated by a negative bevelCHENG LIN·Filed 2012·Granted May 24, 2016·2 cites·31 claims
- 3567US7604306B1Reticle box transport cartTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 20, 2009·12 cites·6 claims
- 3666US5659929AMulti-function hinge structureFiled 1995·Granted Aug 26, 1997·31 cites·2 claims
- 3764US8338255B2Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantationCHENG LIN·Filed 2010·Granted Dec 25, 2012·1 cites·10 claims
- 3861US9755018B2Bipolar junction transistor structure for reduced current crowdingCHENG LIN·Filed 2011·Granted Sep 5, 2017·1 cites·40 claims
- 3960US9236433B2Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layerCREE INC·Filed 2013·Granted Jan 12, 2016·1 cites·25 claims
- 4058US10103230B2Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctionsCREE INC·Filed 2016·Granted Oct 16, 2018·0 cites·12 claims
- 4156USD864904SWireless loudspeakerSHENZHEN GODO CULTURAL ORIGINALITY CO LTD·Filed 2019·Granted Oct 29, 2019·6 cites·1 claims
- 4254US10868169B2Monolithically integrated vertical power transistor and bypass diodeCREE INC·Filed 2013·Granted Dec 15, 2020·0 cites·12 claims
- 4352US2013140585A1Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of makingPOWER INTEGRATIONS INC·Filed 2013·Application pending·0 cites
- 4450US2007228505A1Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of makingMAZZOLA MICHAEL S·Filed 2006·Application pending·0 cites
- 4547US10910481B2Semiconductor device with improved insulated gateCREE INC·Filed 2014·Granted Feb 2, 2021·0 cites·19 claims
- 4644US9601605B2Bipolar junction transistor with improved avalanche capabilityZHANG QINGCHUN·Filed 2012·Granted Mar 21, 2017·0 cites·32 claims
- 4744US2007029573A1Vertical-channel junction field-effect transistors having buried gates and methods of makingCHENG LIN·Filed 2005·Application pending·0 cites
- 4843US10600903B2Semiconductor device including a power transistor device and bypass diodeCREE INC·Filed 2013·Granted Mar 24, 2020·0 cites·11 claims
- 4942US9478616B2Semiconductor device having high performance channelDHAR SARIT·Filed 2011·Granted Oct 25, 2016·0 cites·46 claims
- 5042US2015084063A1Semiconductor device with a current spreading layerCREE INC·Filed 2014·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →