Inventor · disambiguated record
Lingquan Wang
Also filed as: WANG LINGQUAN
14 granted patents·80 citations·filing 2008–2017
91Inventor score
Files withMIE FUJITSU SEMICONDUCTOR LTD7ASBECK PETER1GLOBALFOUNDRIES INC1SUVOLTA INC1THOMPSON SCOTT E1
Top patents by PatentIndex Score
14 records- 0193US9112057B1Semiconductor devices with dopant migration suppression and method of fabrication thereofMIE FUJITSU SEMICONDUCTOR LTD·Filed 2012·Granted Aug 18, 2015·17 cites·19 claims
- 0292US9478571B1Buried channel deeply depleted channel transistorMIE FUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Oct 25, 2016·10 cites·9 claims
- 0389US9196727B2High uniformity screen and epitaxial layers for CMOS devicesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Nov 24, 2015·8 cites·7 claims
- 0483US9368624B2Method for fabricating a transistor with reduced junction leakage currentMIE FUJITSU SEMICONDUCTOR LTD·Filed 2015·Granted Jun 14, 2016·3 cites·1 claims
- 0583US9024295B2Nanowire photodetector and image sensor with internal gainUNIV CALIFORNIA·Filed 2013·Granted May 5, 2015·3 cites·12 claims
- 0683US8883600B1Transistor having reduced junction leakage and methods of forming thereofTHOMPSON SCOTT E·Filed 2012·Granted Nov 11, 2014·5 cites·13 claims
- 0782US8148718B2Low voltage transistorsASBECK PETER·Filed 2008·Granted Apr 3, 2012·13 cites·22 claims
- 0881US9041126B2Deeply depleted MOS transistors having a screening layer and methods thereofSUVOLTA INC·Filed 2013·Granted May 26, 2015·6 cites·19 claims
- 0981US8440997B2Nanowire photodetector and image sensor with internal gainWANG DELI·Filed 2008·Granted May 14, 2013·6 cites·16 claims
- 1080US9786703B2Buried channel deeply depleted channel transistorMIE FUJITSU SEMICONDUCTOR LTD·Filed 2016·Granted Oct 10, 2017·2 cites·7 claims
- 1176US8637955B1Semiconductor structure with reduced junction leakage and method of fabrication thereofWANG LINGQUAN·Filed 2012·Granted Jan 28, 2014·5 cites·20 claims
- 1260US8352895B2Model library implementation and methodology for worst case performance modeling for SRAM cellsGLOBALFOUNDRIES INC·Filed 2010·Granted Jan 8, 2013·2 cites·7 claims
- 1357US9991300B2Buried channel deeply depleted channel transistorMIE FUJITSU SEMICONDUCTOR LTD·Filed 2017·Granted Jun 5, 2018·0 cites·2 claims
- 1454US9105711B2Semiconductor structure with reduced junction leakage and method of fabrication thereofMIE FUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Aug 11, 2015·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →