Inventor · disambiguated record
Li Xu
Also filed as: XU LI · XU LI SHERRY
35 granted patents·13 pending applications·1,056 citations·filing 1999–2020
98Inventor score
Top patents by PatentIndex Score
48 records- 0198US8034734B2Semiconductor processing apparatus which is formed from yttrium oxide and zirconium oxide to produce a solid solution ceramic apparatusAPPLIED MATERIALS INC·Filed 2010·Granted Oct 11, 2011·90 cites·10 claims
- 0298US7696117B2Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmasAPPLIED MATERIALS INC·Filed 2007·Granted Apr 13, 2010·132 cites·35 claims
- 0397US8758858B2Method of producing a plasma-resistant thermal oxide coatingSUN JENNIFER Y·Filed 2012·Granted Jun 24, 2014·38 cites·9 claims
- 0497US8623527B2Semiconductor processing apparatus comprising a coating formed from a solid solution of yttrium oxide and zirconium oxideSUN JENNIFER Y·Filed 2011·Granted Jan 7, 2014·27 cites·7 claims
- 0597US8129029B2Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coatingSUN JENNIFER Y·Filed 2007·Granted Mar 6, 2012·39 cites·10 claims
- 0696US9012030B2Process chamber component having yttrium—aluminum coatingHAN NIANCI·Filed 2012·Granted Apr 21, 2015·30 cites·18 claims
- 0795US9051219B2Semiconductor processing apparatus comprising a solid solution ceramic formed from yttrium oxide, zirconium oxide, and aluminum oxideAPPLIED MATERIALS INC·Filed 2013·Granted Jun 9, 2015·16 cites·11 claims
- 0895US8008208B2Method of cleaning and forming a negatively charged passivation layer over a doped regionAPPLIED MATERIALS INC·Filed 2010·Granted Aug 30, 2011·13 cites·15 claims
- 0995US6942929B2Process chamber having component with yttrium-aluminum coatingFiled 2002·Granted Sep 13, 2005·90 cites·27 claims
- 1095US6352081B1Method of cleaning a semiconductor device processing chamber after a copper etch processAPPLIED MATERIALS INC·Filed 1999·Granted Mar 5, 2002·252 cites·15 claims
- 1194US8016948B2Method of removing contaminants from a coating surface comprising an oxide or fluoride of a group IIIB metalAPPLIED MATERIALS INC·Filed 2008·Granted Sep 13, 2011·14 cites·18 claims
- 1293US7479304B2Gas distribution plate fabricated from a solid yttrium oxide-comprising substrateAPPLIED MATERIALS INC·Filed 2004·Granted Jan 20, 2009·42 cites·16 claims
- 1393US6623595B1Wavy and roughened dome in plasma processing reactorAPPLIED MATERIALS INC·Filed 2000·Granted Sep 23, 2003·47 cites·11 claims
- 1493US6508911B1Diamond coated parts in a plasma reactorAPPLIED MATERIALS INC·Filed 1999·Granted Jan 21, 2003·80 cites·40 claims
- 1592US7371467B2Process chamber component having electroplated yttrium containing coatingAPPLIED MATERIALS INC·Filed 2004·Granted May 13, 2008·37 cites·30 claims
- 1687US7833401B2Electroplating an yttrium-containing coating on a chamber componentAPPLIED MATERIALS INC·Filed 2007·Granted Nov 16, 2010·7 cites·20 claims
- 1787US6476398B1Beam automation in charged-particle-beam systemsAPPLIED MATERIALS INC·Filed 2000·Granted Nov 5, 2002·29 cites·44 claims
- 1886US10840112B2Coated article and semiconductor chamber apparatus formed from yttrium oxide and zirconium oxideAPPLIED MATERIALS INC·Filed 2019·Granted Nov 17, 2020·2 cites·10 claims
- 1986US7547569B2Method for patterning Mo layer in a photovoltaic device comprising CIGS material using an etch processAPPLIED MATERIALS INC·Filed 2006·Granted Jun 16, 2009·8 cites·14 claims
- 2085US8067067B2Clean, dense yttrium oxide coating protecting semiconductor processing apparatusSUN JENNIFER Y·Filed 2004·Granted Nov 29, 2011·26 cites·9 claims
- 2182US8168462B2Passivation process for solar cell fabricationBORDEN PETER·Filed 2009·Granted May 1, 2012·7 cites·19 claims
- 2280US7846264B2Cleaning method used in removing contaminants from a solid yttrium oxide-containing substrateAPPLIED MATERIALS INC·Filed 2006·Granted Dec 7, 2010·7 cites·19 claims
- 2379US10847386B2Method of forming a bulk article and semiconductor chamber apparatus from yttrium oxide and zirconium oxideAPPLIED MATERIALS INC·Filed 2019·Granted Nov 24, 2020·1 cites·6 claims
- 2475US11373882B2Coated article and semiconductor chamber apparatus formed from yttrium oxide and zirconium oxideAPPLIED MATERIALS INC·Filed 2020·Granted Jun 28, 2022·0 cites·10 claims
- 2575US8367924B2Buried insulator isolation for solar cell contactsAPPLIED MATERIALS INC·Filed 2009·Granted Feb 5, 2013·3 cites·12 claims
- 2672US8110086B2Method of manufacturing a process chamber component having yttrium-aluminum coatingHAN NIANCI·Filed 2007·Granted Feb 7, 2012·2 cites·23 claims
- 2770US7718029B2Self-passivating plasma resistant material for joining chamber componentsAPPLIED MATERIALS INC·Filed 2006·Granted May 18, 2010·6 cites·10 claims
- 2867US2009087615A1Corrosion-resistant gas distribution plate for plasma processing chamberSUN JENNIFER Y·Filed 2008·Application pending·0 cites
- 2966US10840113B2Method of forming a coated article and semiconductor chamber apparatus from yttrium oxide and zirconium oxideAPPLIED MATERIALS INC·Filed 2019·Granted Nov 17, 2020·0 cites·10 claims
- 3066US8114525B2Process chamber component having electroplated yttrium containing coatingHAN NIANCI·Filed 2008·Granted Feb 14, 2012·1 cites·7 claims
- 3163US8268728B2Method of cleaning and forming a negatively charged passivation layer over a doped regionSTEWART MICHAEL P·Filed 2011·Granted Sep 18, 2012·0 cites·20 claims
- 3263US2011036874A1Solid yttrium oxide-containing substrate which has been cleaned to remove impuritiesAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 3362US8231736B2Wet clean process for recovery of anodized chamber partsSUN JENNIFER Y·Filed 2007·Granted Jul 31, 2012·1 cites·16 claims
- 3459US10242888B2Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistanceAPPLIED MATERIALS INC·Filed 2013·Granted Mar 26, 2019·0 cites·7 claims
- 3558US2010140222A1Filled polymer composition for etch chamber componentSUN JENNIFER Y·Filed 2009·Application pending·0 cites
- 3657US2008264564A1Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmasAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 3756US7820472B2Method of forming front contacts to a silicon solar cell without patterningAPPLIED MATERIALS INC·Filed 2008·Granted Oct 26, 2010·0 cites·22 claims
- 3856US2009214825A1Ceramic coating comprising yttrium which is resistant to a reducing plasmaAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 3954US2008213496A1Method of coating semiconductor processing apparatus with protective yttrium-containing coatingsAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 4054US2012138472A1Method of forming a process chamber component having electroplated yttrium containing coatingHAN NIANCI·Filed 2012·Application pending·0 cites
- 4153US6413389B1Method for recovering metal from etch by-productsAPPLIED MATERIALS INC·Filed 1999·Granted Jul 2, 2002·9 cites·16 claims
- 4252US10622194B2Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistanceAPPLIED MATERIALS INC·Filed 2015·Granted Apr 14, 2020·0 cites·12 claims
- 4352US2011272024A1MULTI-LAYER SiN FOR FUNCTIONAL AND OPTICAL GRADED ARC LAYERS ON CRYSTALLINE SOLAR CELLSAPPLIED MATERIALS INC·Filed 2011·Application pending·0 cites
- 4452US2011162706A1Passivated polysilicon emitter solar cell and method for manufacturing the sameAPPLIED MATERIALS INC·Filed 2011·Application pending·0 cites
- 4548US2007134416A1Cleaning method used in removing contaminants from the surface of an oxide or fluoride comprising a group III B metalAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 4644US2009142247A1Chemical treatment to reduce machining-induced sub-surface damage in semiconductor processing components comprising silicon carbideAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 4742US2003190870A1Cleaning ceramic surfacesAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 4837US2004200498A1Method and apparatus for cleaning a substrate processing chamberAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →