Inventor · disambiguated record
Lothar Risch
Also filed as: RISCH LOTHAR
55 granted patents·1 pending application·1,652 citations·filing 1980–2008
99Inventor score
Files withSIEMENS AG30INFINEON TECHNOLOGIES AG20INFINEON TECHNOLOGIES RICHMOND2QIMONDA AG2INFINEON TECHNOLOGIES CORP1
Top patents by PatentIndex Score
56 records- 0196US6600200B1MOS transistor, method for fabricating a MOS transistor and method for fabricating two complementary MOS transistorsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jul 29, 2003·130 cites·4 claims
- 0295US5710072AMethod of producing and arrangement containing self-amplifying dynamic MOS transistor memory cellsSIEMENS AG·Filed 1995·Granted Jan 20, 1998·145 cites·10 claims
- 0394US6459123B1Double gated transistorINFINEON TECHNOLOGIES RICHMOND·Filed 1999·Granted Oct 1, 2002·116 cites·7 claims
- 0494US5959328AElectrically programmable memory cell arrangement and method for its manufactureSIEMENS AG·Filed 1997·Granted Sep 28, 1999·102 cites·11 claims
- 0593US4823180APhoto-transistor in MOS thin-film technology and method for production and operation thereofSIEMENS AG·Filed 1982·Granted Apr 18, 1989·99 cites·8 claims
- 0692US6229169B1Memory cell configuration, method for fabricating it and methods for operating itINFINEON TECHNOLOGIES AG·Filed 1998·Granted May 8, 2001·100 cites·10 claims
- 0791US6351408B1Memory cell configurationINFINEON TECHNOLOGIES AG·Filed 2000·Granted Feb 26, 2002·61 cites·9 claims
- 0890US5973373ARead-only-memory cell arrangement using vertical MOS transistors and gate dielectrics of different thicknesses and method for its productionSIEMENS AG·Filed 1995·Granted Oct 26, 1999·73 cites·17 claims
- 0990US4331709AProcess of reducing density of fast surface states in MOS devicesSIEMENS AG·Filed 1980·Granted May 25, 1982·62 cites·3 claims
- 1086US5998261AMethod of producing a read-only storage cell arrangementSIEMENS AG·Filed 1996·Granted Dec 7, 1999·58 cites·4 claims
- 1185US6490190B1Memory cell configuration, magnetic ram, and associative memoryINFINEON TECHNOLOGIES AG·Filed 2000·Granted Dec 3, 2002·41 cites·12 claims
- 1285US6262448B1Memory cell having trench capacitor and vertical, dual-gated transistorINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Jul 17, 2001·54 cites·6 claims
- 1385US5817552AProcess of making a dram cell arrangementSIEMENS AG·Filed 1996·Granted Oct 6, 1998·56 cites·7 claims
- 1484US7368752B2DRAM memory cellINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 6, 2008·27 cites·13 claims
- 1583US6614069B2Nonvolatile semiconductor memory cell and method for fabricating the memory cellINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 2, 2003·34 cites·12 claims
- 1683US6362502B1DRAM cell circuitINFINEON TECHNOLOGIES AG·Filed 2000·Granted Mar 26, 2002·35 cites·7 claims
- 1783US5443992AMethod for manufacturing an integrated circuit having at least one MOS transistorSIEMENS AG·Filed 1994·Granted Aug 22, 1995·54 cites·10 claims
- 1880US5736761ADRAM cell arrangement and method for its manufactureSIEMENS AG·Filed 1996·Granted Apr 7, 1998·41 cites·13 claims
- 1979US6255684B1DRAM cell configuration and method for its productionINFINEON TECHNOLOGIES AG·Filed 1998·Granted Jul 3, 2001·33 cites·7 claims
- 2077US5327374AArrangement with self-amplifying dynamic MOS transistor storage cellsSIEMENS AG·Filed 1991·Granted Jul 5, 1994·42 cites·7 claims
- 2167US6300652B1Memory cell configuration and method for its productionINFINEON TECHNOLOGIES AG·Filed 1996·Granted Oct 9, 2001·27 cites·24 claims
- 2267US5920778ARead-only memory cell arrangement and method for its productionSIEMENS AG·Filed 1996·Granted Jul 6, 1999·24 cites·8 claims
- 2366US6909141B2Method for producing a vertical semiconductor transistor component and vertical semiconductor transistor componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 21, 2005·13 cites·16 claims
- 2466US5828076AMicroelectronic component and process for its productionSIEMENS AG·Filed 1995·Granted Oct 27, 1998·32 cites·5 claims
- 2565US6420228B1Method for the production of a DRAM cell configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 16, 2002·8 cites·5 claims
- 2664US7829892B2Integrated circuit including a gate electrodeQIMONDA AG·Filed 2007·Granted Nov 9, 2010·2 cites·11 claims
- 2762US7180115B1DRAM cell structure with tunnel barrierINFINEON TECHNOLOGIES AG·Filed 2000·Granted Feb 20, 2007·10 cites·5 claims
- 2861US7804708B2Integrated circuit including an array of memory cells and methodQIMONDA AG·Filed 2008·Granted Sep 28, 2010·1 cites·6 claims
- 2961US6417043B1Memory cell configuration and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jul 9, 2002·11 cites·5 claims
- 3061US5744393AMethod for production of a read-only-memory cell arrangement having vertical MOS transistorsSIEMENS AG·Filed 1995·Granted Apr 28, 1998·18 cites·9 claims
- 3160US6553157B2Optoelectronic microelectronic systemINFINEON TECHNOLOGIES AG·Filed 2002·Granted Apr 22, 2003·8 cites·8 claims
- 3258US6864129B2Double gate MOSFET transistor and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 8, 2005·8 cites·20 claims
- 3358US5844834ASingle-electron memory cell configurationSIEMENS AG·Filed 1997·Granted Dec 1, 1998·18 cites·9 claims
- 3455US6184045B1Method for DRAM cell arrangement and method for its productionSIEMENS AG·Filed 2000·Granted Feb 6, 2001·5 cites·4 claims
- 3555US6037209AMethod for producing a DRAM cellular arrangementSIEMENS AG·Filed 1997·Granted Mar 14, 2000·14 cites·7 claims
- 3654US6503784B1Double gated transistorINFINEON TECHNOLOGIES RICHMOND·Filed 2000·Granted Jan 7, 2003·5 cites·14 claims
- 3751US6307422B1Circuit configuration having single-electron components, a method for its operation and use of the method for addition of binary numbersINFINEON TECHNOLOGIES AG·Filed 2000·Granted Oct 23, 2001·10 cites·12 claims
- 3849US6442042B2Circuit configuration having at least one nanoelectronic component and method for fabricating the componentINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 27, 2002·4 cites·12 claims
- 3948US5559353AIntegrated circuit structure having at least one CMOS-NAND gate and method for the manufacture thereofSIEMENS AG·Filed 1994·Granted Sep 24, 1996·16 cites·5 claims
- 4046US6337247B1Method of producing a vertical MOS transistorINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jan 8, 2002·3 cites·15 claims
- 4142US6320447B1Circuit configuration with single-electron components, and operating methodINFINEON TECHNOLOGIES AG·Filed 2000·Granted Nov 20, 2001·5 cites·8 claims
- 4242US6038164ASRAM cell configuration and method for its fabricationSIEMENS AG·Filed 1998·Granted Mar 14, 2000·7 cites·8 claims
- 4340US6060911ACircuit arrangement with at least four transistors, and method for the manufacture thereofSIEMENS AG·Filed 1998·Granted May 9, 2000·7 cites·15 claims
- 4440US5920099ARead-only memory cell array and process for manufacturing itSIEMENS AG·Filed 1996·Granted Jul 6, 1999·5 cites·12 claims
- 4538US6472767B1Static random access memory (SRAM)INFINEON TECHNOLOGIES AG·Filed 1999·Granted Oct 29, 2002·4 cites·15 claims
- 4636US6147376ADRAM cell arrangement and method for its productionSIEMENS AG·Filed 1999·Granted Nov 14, 2000·3 cites·4 claims
- 4735US6518628B1Integrated CMOS circuit configuration, and production of sameSIEMENS AG·Filed 1998·Granted Feb 11, 2003·3 cites·4 claims
- 4835US4486778AArrangement for contact-free measurement of electrical charge images in electro-radiographic recording methodsSIEMENS AG·Filed 1982·Granted Dec 4, 1984·5 cites·17 claims
- 4932US4966859AVoltage-stable sub-μm MOS transistor for VLSI circuitsSIEMENS AG·Filed 1989·Granted Oct 30, 1990·3 cites·3 claims
- 5032US2009225580A1Integrated Circuit, Memory Module, and Method of Manufacturing an Integrated CircuitWANG PENG-FEI·Filed 2008·Application pending·0 cites
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →