Inventor · disambiguated record
Mariappan Hariharaputhiran
Also filed as: HARIHARAPUTHIRAN MARIAPPAN
5 granted patents·5 pending applications·31 citations·filing 2013–2017
78Inventor score
Files withGLOBALFOUNDRIES INC10
Top patents by PatentIndex Score
10 records- 0193US9735154B2Semiconductor structure having gap fill dielectric layer disposed between finsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 15, 2017·9 cites·20 claims
- 0289US9105478B2Devices and methods of forming fins at tight fin pitchesGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 11, 2015·9 cites·10 claims
- 0387US9608086B2Metal gate structure and method of formationGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 28, 2017·8 cites·9 claims
- 0477US9196499B2Method of forming semiconductor finsGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 24, 2015·3 cites·20 claims
- 0568US9147696B2Devices and methods of forming finFETs with self aligned fin formationGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 29, 2015·2 cites·7 claims
- 0649US2017162688A1Metal gate structure and method of formationGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 0745US2015287595A1Devices and methods of forming fins at tight fin pitchesGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 0844US2015333067A1Devices and methods of forming finfets with self aligned fin formationGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 0943US2015270175A1Partially crystallized fin hard mask for fin field-effect-transistor (finfet) deviceGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 1039US2015214345A1Dopant diffusion barrier to form isolated source/drains in a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Mariappan Hariharaputhiran files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →