Inventor · disambiguated record
Mamoru Imade
Also filed as: IMADE MAMORU
11 granted patents·4 pending applications·12 citations·filing 2004–2021
81Inventor score
Files withUNIV OSAKA10PANASONIC IP MAN CO LTD2DISCO CORP1LAM RES CORP1MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1
Top patents by PatentIndex Score
15 records- 0187US9834859B2Method for producing group III nitride crystal, group III nitride crystal, and semiconductor deviceUNIV OSAKA·Filed 2013·Granted Dec 5, 2017·9 cites·11 claims
- 0285US10910511B2Manufacturing method of III-V compound crystal and manufacturing method of semiconductor deviceDISCO CORP·Filed 2018·Granted Feb 2, 2021·2 cites·17 claims
- 0363US10202710B2Process for producing group III nitride crystal and apparatus for producing group III nitride crystalUNIV OSAKA·Filed 2015·Granted Feb 12, 2019·1 cites·12 claims
- 0451US10026612B2Method for producing group III nitride crystal, group III nitride crystal, semiconductor device and apparatus for producing group III nitride crystalUNIV OSAKA·Filed 2014·Granted Jul 17, 2018·0 cites·29 claims
- 0547US10145022B2Crystal growth apparatus and crystal production methodUNIV OSAKA·Filed 2017·Granted Dec 4, 2018·0 cites·5 claims
- 0646US2017314157A1Method for manufacturing nitride crystal substrate and substrate for crystal growthUNIV OSAKA·Filed 2017·Application pending·0 cites
- 0745US7361220B2Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Apr 22, 2008·0 cites·48 claims
- 0845US2023087976A1Non-plasma enhanced deposition for recess etch matchingLAM RES CORP·Filed 2021·Application pending·0 cites
- 0943US10059590B2Method for producing group III nitride crystalPANASONIC IP MAN CO LTD·Filed 2015·Granted Aug 28, 2018·0 cites·11 claims
- 1042US10309036B2Method for manufacturing group-III nitride semiconductor crystal substrateUNIV OSAKA·Filed 2016·Granted Jun 4, 2019·0 cites·19 claims
- 1141US10260165B2Method for manufacturing nitride crystal substrate and substrate for crystal growthUNIV OSAKA·Filed 2017·Granted Apr 16, 2019·0 cites·9 claims
- 1239US2016090665A1Apparatus for producing group iii nitride crystal, and method for producing the samePANASONIC IP MAN CO LTD·Filed 2015·Application pending·0 cites
- 1338US10011921B2Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production deviceUNIV OSAKA·Filed 2015·Granted Jul 3, 2018·0 cites·43 claims
- 1436US2018094361A1Method for producing group iii nitride crystal, semiconductor apparatus, and apparatus for producing group iii nitride crystalUNIV OSAKA·Filed 2017·Application pending·0 cites
- 1534US10266965B2Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystalUNIV OSAKA·Filed 2015·Granted Apr 23, 2019·0 cites·35 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →