Inventor · disambiguated record
Mahmut Sami Kavrik
Also filed as: KAVRIK MAHMUT · KAVRIK MAHMUT SAMI
2 granted patents·20 pending applications·0 citations·filing 2017–2023
22Inventor score
Top patents by PatentIndex Score
22 records- 0159US11118263B2Method for forming a protective coating film for halide plasma resistanceAPPLIED MATERIALS INC·Filed 2019·Granted Sep 14, 2021·0 cites·7 claims
- 0256US2025113573A1Transition metal dichalcogenide monolayer transfer using low strain transfer protective layerINTEL CORP·Filed 2023·Application pending·0 cites
- 0356US2025220921A1Enhancing device performance by mitigation of oxygen migration in hafnium oxide based material systemsINTEL CORP·Filed 2023·Application pending·0 cites
- 0456US2025112122A1Backside power gatingINTEL CORP·Filed 2023·Application pending·0 cites
- 0556US2025107147A1Architectures and methods to modulate contact resistance in 2d materials for use in field effect transistor devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 0655US2025113540A1Transistor comprising a composite gate dielectric structure and method to provide sameINTEL CORP·Filed 2023·Application pending·0 cites
- 0755US2025113572A1Method of fabricating a 2d channel transistor by employing selective metallization to form a source or drain structureINTEL CORP·Filed 2023·Application pending·0 cites
- 0854US2024222441A1Selective gate oxide formation on 2d material based transistor devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 0954US2025113599A1Methods for doping 2d transistor devices and resulting architecturesINTEL CORP·Filed 2023·Application pending·0 cites
- 1053US2025113547A1Integrated circuit structures with internal spacers for 2d channel materialsINTEL CORP·Filed 2023·Application pending·0 cites
- 1153US2025113521A1Direct transfer of transition metal dichalcogenide monolayers using diffusion bonding layersINTEL CORP·Filed 2023·Application pending·0 cites
- 1252US2024222461A1Beol contact metals for 2d transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 1352US2024222483A12d nanoribbons utilizing silicon scaffoldingINTEL CORP·Filed 2022·Application pending·0 cites
- 1451US2024222484A1Transistor with channel material in a stack with insulator material supportsINTEL CORP·Filed 2022·Application pending·0 cites
- 1551US2024222482A1Transistor structures having a doping layer on transition metal dichalcogenide layers outside of the channel regionINTEL CORP·Filed 2022·Application pending·0 cites
- 1651US2024355934A1Integrated circuits with monolayer tmd channel and multilayer tmd source and drainINTEL CORP·Filed 2023·Application pending·0 cites
- 1751US2024222113A1Passivation of crystalline substrate for metal chalcogen material synthesisINTEL CORP·Filed 2022·Application pending·0 cites
- 1850US2024222428A1Seeded growth for 2d nanoribbon transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 1950US2024222485A1Transfer-free 2d fet and fefet device fabrication by 2d material growth in superlattice with nitridesINTEL CORP·Filed 2022·Application pending·0 cites
- 2050US2024222073A1Ion beam lithography and nanoengineeringINTEL CORP·Filed 2022·Application pending·0 cites
- 2150US2024222126A1Fabrication of novel devices using ion beamsINTEL CORP·Filed 2022·Application pending·0 cites
- 2233US10840350B2Nanolaminate structure, semiconductor device and method of forming nanolaminate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 17, 2020·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Mahmut Sami Kavrik files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →