Inventor · disambiguated record
Mahender Kumar
Also filed as: KUMAR MAHENDER
24 granted patents·13 pending applications·537 citations·filing 2003–2024
96Inventor score
Top patents by PatentIndex Score
37 records- 0198US10461186B1Methods of forming vertical field effect transistors with self-aligned contacts and the resulting structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 29, 2019·28 cites·20 claims
- 0298US7118986B2STI formation in semiconductor device including SOI and bulk silicon regionsIBM·Filed 2004·Granted Oct 10, 2006·258 cites·26 claims
- 0397US7151023B1Metal gate MOSFET by full semiconductor metal alloy conversionIBM·Filed 2005·Granted Dec 19, 2006·80 cites·14 claims
- 0494US7659157B2Dual metal gate finFETs with single or dual high-K gate dielectricIBM·Filed 2007·Granted Feb 9, 2010·29 cites·12 claims
- 0593US8188574B2Pedestal guard ring having continuous M1 metal barrier connected to crack stopANGYAL MATTHEW S·Filed 2010·Granted May 29, 2012·21 cites·22 claims
- 0692US10770388B2Transistor with recessed cross couple for gate contact over active region integrationIBM·Filed 2018·Granted Sep 8, 2020·8 cites·9 claims
- 0788US7485537B2Method of fabricating a vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thicknessIBM·Filed 2006·Granted Feb 3, 2009·12 cites·1 claims
- 0886US9812324B1Methods to control fin tip placementGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 7, 2017·4 cites·14 claims
- 0986US7911024B2Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereofIBM·Filed 2010·Granted Mar 22, 2011·6 cites·4 claims
- 1085US7691716B2Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operationIBM·Filed 2008·Granted Apr 6, 2010·10 cites·5 claims
- 1185US7528027B1Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channelIBM·Filed 2008·Granted May 5, 2009·12 cites·20 claims
- 1285US7485510B2Field effect device including inverted V shaped channel region and method for fabrication thereofIBM·Filed 2006·Granted Feb 3, 2009·15 cites·1 claims
- 1378US7375410B2Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereofIBM·Filed 2004·Granted May 20, 2008·17 cites·14 claims
- 1476US9780002B1Threshold voltage and well implantation method for semiconductor devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 3, 2017·2 cites·20 claims
- 1576US7115965B2Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operationIBM·Filed 2004·Granted Oct 3, 2006·16 cites·14 claims
- 1675US7763518B2Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereofIBM·Filed 2008·Granted Jul 27, 2010·4 cites·17 claims
- 1772US7790553B2Methods for forming high performance gates and structures thereofIBM·Filed 2008·Granted Sep 7, 2010·5 cites·14 claims
- 1871US7394131B2STI formation in semiconductor device including SOI and bulk silicon regionsIBM·Filed 2006·Granted Jul 1, 2008·4 cites·3 claims
- 1966US8053838B2Structures, fabrication methods, design structures for strained fin field effect transistors (FinFets)IBM·Filed 2008·Granted Nov 8, 2011·3 cites·20 claims
- 2064US7790541B2Method and structure for forming multiple self-aligned gate stacks for logic devicesIBM·Filed 2007·Granted Sep 7, 2010·3 cites·1 claims
- 2161US2025318238A1Via-to-backside power rail structureIBM·Filed 2024·Application pending·0 cites
- 2261US2025259940A1Parallel lines formed by isolation cutIBM·Filed 2024·Application pending·0 cites
- 2360US2025261424A1Semiconductor backside contact spacer engineeringIBM·Filed 2024·Application pending·0 cites
- 2460US2025285975A1Enhanced power rail connectionIBM·Filed 2024·Application pending·0 cites
- 2559US2025254915A1Robust backside contact formationIBM·Filed 2024·Application pending·0 cites
- 2658US2025203933A1Contact and placeholder configuration for backside power delivery devicesIBM·Filed 2023·Application pending·0 cites
- 2757US2024321748A1Irregular-shaped power rail in cell power distributionIBM·Filed 2023·Application pending·0 cites
- 2852US2008132025A1Ultra-thin soi vertical bipolar transistors with an inversion collector on thin-buried oxide (box) for low substrate-bias operation and methods thereofIBM·Filed 2007·Application pending·0 cites
- 2950US2007034967A1Metal gate mosfet by full semiconductor metal alloy conversionIBM·Filed 2006·Application pending·0 cites
- 3048US7943474B2EDRAM including metal platesIBM·Filed 2009·Granted May 17, 2011·0 cites·11 claims
- 3144US10566328B2Integrated circuit products with gate structures positioned above elevated isolation structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 18, 2020·0 cites·17 claims
- 3244US2009256207A1Finfet devices from bulk semiconductor and methods for manufacturing the sameIBM·Filed 2008·Application pending·0 cites
- 3341US2008169510A1Performance enhancement on both nmosfet and pmosfet using self-aligned dual stressed filmsIBM·Filed 2007·Application pending·0 cites
- 3441US2009072400A1Contact forming in two portions and contact so formedIBM·Filed 2007·Application pending·0 cites
- 3540US2019139830A1Self-aligned gate isolationGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 3639US6995094B2Method for deep trench etching through a buried insulator layerIBM·Filed 2003·Granted Feb 7, 2006·0 cites·16 claims
- 3738US8610217B2Self-protected electrostatic discharge field effect transistor (SPESDFET), an integrated circuit incorporating the SPESDFET as an input/output (I/O) pad driver and associated methods of forming the SPESDFET and the integrated circuitGAUTHIER JR ROBERT J·Filed 2010·Granted Dec 17, 2013·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →