Inventor · disambiguated record
Masashi Sahara
Also filed as: SAHARA MASASHI
34 granted patents·3 pending applications·419 citations·filing 1996–2019
97Inventor score
Files withHITACHI LTD14RENESAS TECH CORP13HITACHI ULSI SYS CO LTD3RENESAS ELECTRONICS CORP3KANAOKA TAKU2
Top patents by PatentIndex Score
37 records- 0193US7342302B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2006·Granted Mar 11, 2008·20 cites·31 claims
- 0292US7759804B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2008·Granted Jul 20, 2010·20 cites·4 claims
- 0389US7102223B1Semiconductor device and a method of manufacturing the sameHITACHI ULSI SYS CO LTD·Filed 2003·Granted Sep 5, 2006·38 cites·34 claims
- 0488US7504297B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Mar 17, 2009·15 cites·22 claims
- 0588US6897570B2Semiconductor device and method of manufacturing sameRENESAS TECH CORP·Filed 2003·Granted May 24, 2005·54 cites·19 claims
- 0686US8183691B2Semiconductor device with pads overlapping wiring layers including dummy wiringKANAOKA TAKU·Filed 2010·Granted May 22, 2012·7 cites·9 claims
- 0786US5904556AMethod for making semiconductor integrated circuit device having interconnection structure using tungsten filmHITACHI LTD·Filed 1996·Granted May 18, 1999·63 cites·15 claims
- 0883US7705462B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2009·Granted Apr 27, 2010·8 cites·10 claims
- 0983US7615848B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2008·Granted Nov 10, 2009·8 cites·17 claims
- 1082US6429476B2Semiconductor integrated circuit deviceHITACHI LTD·Filed 2001·Granted Aug 6, 2002·27 cites·2 claims
- 1180US7400046B2Semiconductor device with guard rings that are formed in each of the plural wiring layersRENESAS TECH CORP·Filed 2007·Granted Jul 15, 2008·6 cites·22 claims
- 1279US7303986B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2006·Granted Dec 4, 2007·6 cites·22 claims
- 1377US6780757B2Semiconductor integrated circuit device and method for making the sameRENESAS TECH CORP·Filed 2003·Granted Aug 24, 2004·17 cites·6 claims
- 1474US6031288ASemiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereofHITACHI LTD·Filed 1996·Granted Feb 29, 2000·36 cites·49 claims
- 1573US6583049B2Semiconductor integrated circuit device and method for making the sameHITACHI LTD·Filed 2001·Granted Jun 24, 2003·13 cites·7 claims
- 1673US6503803B2Method of fabricating a semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layerHITACHI LTD·Filed 2001·Granted Jan 7, 2003·16 cites·32 claims
- 1769US6472754B2Semiconductor device with improved arrangements to avoid breakage of tungsten interconnectorHITACHI LTD·Filed 2001·Granted Oct 29, 2002·13 cites·9 claims
- 1866US7189637B2Method of manufacturing a semiconductor device having a multi-layered wiring structureHITACHI ULSI SYS CO LTD·Filed 2003·Granted Mar 13, 2007·9 cites·29 claims
- 1964US6268658B1Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereofHITACHI LTD·Filed 2000·Granted Jul 31, 2001·10 cites·7 claims
- 2059US7064437B2Semiconductor device having aluminum conductorsHITACHI LTD·Filed 2002·Granted Jun 20, 2006·5 cites·10 claims
- 2159US6856021B1Semiconductor device having aluminum alloy conductorsRENESAS TECH CORP·Filed 2000·Granted Feb 15, 2005·5 cites·25 claims
- 2257US10199338B2Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Feb 5, 2019·0 cites·15 claims
- 2356US6476492B2Semiconductor device having a capacitor and an interconnect layer with molybdenum-containing tungstenHITACHI LTD·Filed 2001·Granted Nov 5, 2002·5 cites·9 claims
- 2456US2014159245A1Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2555US11217670B2Semiconductor device having a back electrode including Au-Sb alloy layer and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2019·Granted Jan 4, 2022·0 cites·6 claims
- 2654US6548904B2Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenumHITACHI LTD·Filed 2002·Granted Apr 15, 2003·4 cites·8 claims
- 2752US8669659B2Semiconductor device and a method of manufacturing the sameKANAOKA TAKU·Filed 2012·Granted Mar 11, 2014·0 cites·19 claims
- 2852US6617691B2Semiconductor deviceHITACHI LTD·Filed 2002·Granted Sep 9, 2003·4 cites·6 claims
- 2951US7750427B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2009·Granted Jul 6, 2010·0 cites·18 claims
- 3045US7241685B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Granted Jul 10, 2007·1 cites·24 claims
- 3145US7132341B2Semiconductor integrated circuit device and the process of the sameHITACHI ULSI SYS CO LTD·Filed 2001·Granted Nov 7, 2006·1 cites·27 claims
- 3245US6545362B2Semiconductor device and method of manufacturing the sameHITACHI LTD·Filed 2001·Granted Apr 8, 2003·1 cites·18 claims
- 3343US6300237B1Semiconductor integrated circuit device and method for making the sameHITACHI LTD·Filed 1999·Granted Oct 9, 2001·7 cites·23 claims
- 3442US2004235289A1Semiconductor integrated circuit device and method for making the sameFiled 2004·Application pending·0 cites
- 3541US6784549B2Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenumRENESAS TECH CORP·Filed 2003·Granted Aug 31, 2004·0 cites·13 claims
- 3640US6538329B2Semiconductor integrated circuit device and method for making the sameHITACHI LTD·Filed 2001·Granted Mar 25, 2003·0 cites·6 claims
- 3738US2002190295A1Semiconductor integrated circuit device and the process of manufacturing the sameFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →