Inventor · disambiguated record
Masao Saitoh
Also filed as: SAITOH MASAO
9 granted patents·1 pending application·875 citations·filing 1989–2008
91Inventor score
Files withEBARA CORP3FUJI ELECTRIC CO LTD2DENSO CORP1MITSUBISHI MATERIAL SILICON1MITSUBISHI MATERIALS CORP1
Top patents by PatentIndex Score
10 records- 0198US5950925AReactant gas ejector headEBARA CORP·Filed 1997·Granted Sep 14, 1999·697 cites·8 claims
- 0277US5883470AFast atomic beam source with an inductively coupled plasma generatorEBARA CORP·Filed 1997·Granted Mar 16, 1999·70 cites·20 claims
- 0372US5408952ASingle crystal growth methodMITSUBISHI MATERIALS CORP·Filed 1991·Granted Apr 25, 1995·30 cites·5 claims
- 0461US4982534ASuspended membrane structureMITSUI CONSTR·Filed 1989·Granted Jan 8, 1991·27 cites·7 claims
- 0558US5551299AApparatus for measuring pressure in a fluid using a seal diaphragm and pressure transmitting mediumFUJI ELECTRIC CO LTD·Filed 1994·Granted Sep 3, 1996·16 cites·2 claims
- 0656US5400655APressure measuring apparatusFUJI ELECTRIC CO LTD·Filed 1992·Granted Mar 28, 1995·15 cites·7 claims
- 0754US6495758B2Anisotropically electroconductive connecting materialSONY CHEMICALS CORP·Filed 2001·Granted Dec 17, 2002·5 cites·10 claims
- 0844US6312569B1Chemical vapor deposition apparatus and cleaning method thereofEBARA CORP·Filed 1998·Granted Nov 6, 2001·11 cites·12 claims
- 0941US2009049952A1Starter having intermediate gearDENSO CORP·Filed 2008·Application pending·0 cites
- 1036US5843228AApparatus for preventing heater electrode meltdown in single crystal pulling apparatusMITSUBISHI MATERIAL SILICON·Filed 1997·Granted Dec 1, 1998·4 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →