Inventor · disambiguated record
Masaru Takizawa
Also filed as: TAKIZAWA MASARU
11 granted patents·38 citations·filing 2012–2020
88Inventor score
Top patents by PatentIndex Score
11 records- 0193US9412882B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2015·Granted Aug 9, 2016·10 cites·8 claims
- 0290US9595586B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2016·Granted Mar 14, 2017·5 cites·8 claims
- 0390US9171967B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2012·Granted Oct 27, 2015·9 cites·8 claims
- 0489US9349915B2β-Ga2O3-based single crystal substrateTAMURA SEISAKUSHO KK·Filed 2015·Granted May 24, 2016·3 cites·13 claims
- 0586US10600874B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2017·Granted Mar 24, 2020·3 cites·13 claims
- 0685US9972972B2Vertical cavity light emitting deviceSTANLEY ELECTRIC CO LTD·Filed 2016·Granted May 15, 2018·4 cites·9 claims
- 0778US9431489B2β-Ga2O3-based single crystal substrateTAMURA SEISAKUSHO KK·Filed 2015·Granted Aug 30, 2016·3 cites·8 claims
- 0877US9915010B2Method for cultivating β-Ga2O3-based single crystal, and β-Ga2O3-based single crystal substrate and method for producing sameTAMURA SEISAKUSHO KK·Filed 2014·Granted Mar 13, 2018·1 cites·15 claims
- 0970US11264466B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2020·Granted Mar 1, 2022·0 cites·12 claims
- 1055US11146040B2Semiconductor multilayer film reflecting mirror and vertical cavity light-emitting elementUNIV MEIJO·Filed 2018·Granted Oct 12, 2021·0 cites·9 claims
- 1146US10196756B2β-Ga2O3 single-crystal substrateTAMURA SEISAKUSHO KK·Filed 2015·Granted Feb 5, 2019·0 cites·8 claims
Join the waitlist — get patent alerts
Get an alert when Masaru Takizawa files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →