Inventor · disambiguated record
Masaro Tamatsuka
Also filed as: TAMATSUKA MASARO
30 granted patents·1 pending application·636 citations·filing 1993–2019
97Inventor score
Top patents by PatentIndex Score
31 records- 0192US6261361B1Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing itSHINETSU HANDOTAI KK·Filed 2000·Granted Jul 17, 2001·34 cites·10 claims
- 0290US6680260B2Method of producing a bonded wafer and the bonded waferSHINETSU HANDOTAI KK·Filed 2002·Granted Jan 20, 2004·53 cites·28 claims
- 0388US6191009B1Method for producing silicon single crystal wafer and silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Feb 20, 2001·57 cites·19 claims
- 0487US6478883B1Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing themSHINETSU HANDOTAI KK·Filed 1999·Granted Nov 12, 2002·84 cites·21 claims
- 0584US6492682B1Method of producing a bonded wafer and the bonded waferSHIN ETSU HANDOTAL CO LTD·Filed 2000·Granted Dec 10, 2002·35 cites·1 claims
- 0679US7147711B2Method of producing silicon wafer and silicon waferSHINETSU HANDOTAI KK·Filed 2001·Granted Dec 12, 2006·22 cites·16 claims
- 0775US6802899B1Silicon single crystal wafer and manufacturing process thereforSHINETSU HANDOTAI KK·Filed 2000·Granted Oct 12, 2004·11 cites·8 claims
- 0875US6413310B1Method for producing silicon single crystal wafer and silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Jul 2, 2002·45 cites·24 claims
- 0975US6162708AMethod for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Dec 19, 2000·47 cites·24 claims
- 1074US6299982B1Silicon single crystal wafer and method for producing silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Oct 9, 2001·25 cites·20 claims
- 1174US6139625AMethod for producing a silicon single crystal wafer and a silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Oct 31, 2000·27 cites·12 claims
- 1272US6573159B1Method for thermally annealing silicon wafer and silicon waferSHINETSU HANDOTAI KK·Filed 1999·Granted Jun 3, 2003·29 cites·8 claims
- 1372US6077343ASilicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing itSHINETSU HANDOTAI KK·Filed 1999·Granted Jun 20, 2000·33 cites·11 claims
- 1471US6224668B1Method for producing SOI substrate and SOI substrateSHINETSU HANDOTAI KK·Filed 1999·Granted May 1, 2001·38 cites·14 claims
- 1570US11248306B2Anodic-oxidation equipment, anodic-oxidation method, and method for producing cathode of anodic-oxidation equipmentSHINETSU HANDOTAI KK·Filed 2019·Granted Feb 15, 2022·0 cites·6 claims
- 1669US6809015B2Method for heat treatment of silicon wafers and silicon waferSHINETSU HANDOTAI KK·Filed 2003·Granted Oct 26, 2004·9 cites·1 claims
- 1769US6626994B1Silicon wafer for epitaxial wafer, epitaxial wafer, and method of manufacture thereofSHINETSU HANDOTAI KK·Filed 2000·Granted Sep 30, 2003·12 cites·16 claims
- 1864US6599603B1Silicon waferSHINETSU HANDOTAI KK·Filed 2000·Granted Jul 29, 2003·9 cites·12 claims
- 1964US6197109B1Method for producing low defect silicon single crystal doped with nitrogenSHINETSU HANDOTAI KK·Filed 1999·Granted Mar 6, 2001·17 cites·8 claims
- 2060US7189293B2Method of producing annealed wafer and annealed waferSHINETSU HANDOTAI KK·Filed 2002·Granted Mar 13, 2007·7 cites·23 claims
- 2156US7153785B2Method of producing annealed wafer and annealed waferSHINETSU HANDOTAI KK·Filed 2002·Granted Dec 26, 2006·5 cites·9 claims
- 2254US6805743B2Method for manufacturing single-crystal-silicon wafersSHINETSU HANDOTAI KK·Filed 2001·Granted Oct 19, 2004·4 cites·16 claims
- 2352US7011717B2Method for heat treatment of silicon wafers and silicon waferSHINETSU HANDOTAI KK·Filed 2004·Granted Mar 14, 2006·2 cites·2 claims
- 2452US6878645B2Method for manufacturing silicon waferSHINETSU HANDOTAI KK·Filed 2001·Granted Apr 12, 2005·3 cites·6 claims
- 2552US6841450B2Annealed wafer manufacturing method and annealed waferSHINETSU HANDOTAI KK·Filed 2001·Granted Jan 11, 2005·3 cites·24 claims
- 2651US5386118AMethod and apparatus for determination of interstitial oxygen concentration in silicon single crystalSHINETSU HANDOTAI KK·Filed 1993·Granted Jan 31, 1995·10 cites·5 claims
- 2747US6670261B2Production method for annealed waferSHINETSU HANDOTAI KK·Filed 2001·Granted Dec 30, 2003·1 cites·2 claims
- 2844US5444246ADetermining carbon concentration in silicon single crystal by FT-IRSHINETSU HANDOTAI KK·Filed 1993·Granted Aug 22, 1995·11 cites·26 claims
- 2938US7326658B2Method for preparing nitrogen-doped annealed wafer and nitrogen-doped and annealed waferSHINETSU HANDOTAI KK·Filed 2002·Granted Feb 5, 2008·0 cites·4 claims
- 3037US6291874B1Method for producing silicon single crystal wafer for particle monitoring and silicon single crystal wafer for particle monitoringSHINETSU HANDOTAI KK·Filed 1999·Granted Sep 18, 2001·3 cites·8 claims
- 3136US2003196588A1Silicon boat with protective film, method of manufacture thereof, and silicon wafer heat-treated using silicon boatFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →