Inventor · disambiguated record
Mahalingam Venkatesan
Also filed as: VENKATESAN MAHALINGAM
19 granted patents·4 pending applications·1,632 citations·filing 1990–2013
97Inventor score
Top patents by PatentIndex Score
23 records- 0198US5645646ASusceptor for deposition apparatusAPPLIED MATERIALS INC·Filed 1996·Granted Jul 8, 1997·406 cites·24 claims
- 0296US5551982ASemiconductor wafer process chamber with susceptor back coatingAPPLIED MATERIALS INC·Filed 1994·Granted Sep 3, 1996·136 cites·22 claims
- 0395US5932286ADeposition of silicon nitride thin filmsAPPLIED MATERIALS INC·Filed 1993·Granted Aug 3, 1999·136 cites·7 claims
- 0494US6113703AMethod and apparatus for processing the upper and lower faces of a waferAPPLIED MATERIALS INC·Filed 1998·Granted Sep 5, 2000·367 cites·19 claims
- 0593US5916369AGas inlets for wafer processing chamberAPPLIED MATERIALS INC·Filed 1995·Granted Jun 29, 1999·117 cites·9 claims
- 0688US5695819AMethod of enhancing step coverage of polysilicon depositsAPPLIED MATERIALS INC·Filed 1996·Granted Dec 9, 1997·79 cites·12 claims
- 0785US8535766B2Patterning of magnetic thin film using energized ionsVERHAVERBEKE STEVEN·Filed 2008·Granted Sep 17, 2013·8 cites·9 claims
- 0885US5112764AMethod for the fabrication of low leakage polysilicon thin film transistorsPHILIPS CORP·Filed 1990·Granted May 12, 1992·121 cites·13 claims
- 0984US5599397ASemiconductor wafer process chamber with suspector back coatingAPPLIED MATERIALS INC·Filed 1996·Granted Feb 4, 1997·43 cites·10 claims
- 1083US8551578B2Patterning of magnetic thin film using energized ions and thermal excitationNALAMASU OMKARAM·Filed 2008·Granted Oct 8, 2013·9 cites·8 claims
- 1183US5576059ADepositing polysilicon films having improved uniformity and apparatus thereforAPPLIED MATERIALS INC·Filed 1995·Granted Nov 19, 1996·39 cites·4 claims
- 1276US5834059AProcess of depositing a layer of material on a wafer with susceptor back coatingAPPLIED MATERIALS INC·Filed 1996·Granted Nov 10, 1998·29 cites·16 claims
- 1375US6500734B2Gas inlets for wafer processing chamberAPPLIED MATERIALS INC·Filed 1999·Granted Dec 31, 2002·45 cites·21 claims
- 1474US6402850B1Depositing polysilicon films having improved uniformity and apparatus thereforAPPLIED MATERIALS INC·Filed 1994·Granted Jun 11, 2002·28 cites·3 claims
- 1568US9263078B2Patterning of magnetic thin film using energized ionsAPPLIED MATERIALS INC·Filed 2013·Granted Feb 16, 2016·0 cites·5 claims
- 1668US5863598AMethod of forming doped silicon in high aspect ratio openingsAPPLIED MATERIALS INC·Filed 1996·Granted Jan 26, 1999·36 cites·20 claims
- 1759US5725673ASemiconductor wafer process chamber with susceptor back coatingAPPLIED MATERIALS INC·Filed 1996·Granted Mar 10, 1998·14 cites·7 claims
- 1857US2014083363A1Patterning of magnetic thin film using energized ions and thermal excitationAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 1953US6146464ASusceptor for deposition apparatusAPPLIED MATERIALS INC·Filed 1997·Granted Nov 14, 2000·15 cites·21 claims
- 2053US2009201722A1Method including magnetic domain patterning using plasma ion implantation for mram fabricationGIRIDHAR KAMESH·Filed 2009·Application pending·0 cites
- 2150US2009199768A1Magnetic domain patterning using plasma ion implantationVERHAVERBEKE STEVEN·Filed 2008·Application pending·0 cites
- 2238US2003092266A1Gas inlets for wafer processing chamberFiled 2003·Application pending·0 cites
- 2335US6284650B1Integrated tungsten-silicide processesAPPLIED MATERIALS INC·Filed 1997·Granted Sep 4, 2001·4 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →