Inventor · disambiguated record
Meishoku Masahara
Also filed as: MASAHARA MEISHOKU
10 granted patents·3 pending applications·86 citations·filing 2004–2016
88Inventor score
Files withNAT INST OF ADVANCED IND SCIEN6OUCHI SHINICHI3LIU YONGXUN2AIST1NAT INST OF ADV IND SCIENCE AN1
Top patents by PatentIndex Score
13 records- 0191US8399330B2Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistorLIU YONGXUN·Filed 2012·Granted Mar 19, 2013·19 cites·2 claims
- 0289US7382020B2Semiconductor integrated circuitNAT INST OF ADVANCED IND SCIEN·Filed 2005·Granted Jun 3, 2008·19 cites·12 claims
- 0387US8399879B2Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistorLIU YONGXUN·Filed 2009·Granted Mar 19, 2013·18 cites·6 claims
- 0478US8243501B2SRAM deviceOUCHI SHINICHI·Filed 2011·Granted Aug 14, 2012·5 cites·13 claims
- 0576US8040717B2SRAM cell and SRAM deviceNAT INST OF ADVANCED IND SCIEN·Filed 2007·Granted Oct 18, 2011·7 cites·7 claims
- 0676US7282959B2CMOS circuit including double-insulated-gate field-effect transistorsNAT INST OF ADVANCED IND SCIEN·Filed 2005·Granted Oct 16, 2007·8 cites·20 claims
- 0773US8077510B2SRAM deviceOUCHI SHINICHI·Filed 2007·Granted Dec 13, 2011·6 cites·4 claims
- 0867US7423324B2Double-gate MOS transistor, double-gate CMOS transistor, and method for manufacturing the sameNAT INST OF ADVANCED IND SCIEN·Filed 2005·Granted Sep 9, 2008·4 cites·19 claims
- 0949US2011057163A1Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistorNAT INST OF ADVANCED IND SCIEN·Filed 2009·Application pending·0 cites
- 1046US2010110774A1Sram deviceOUCHI SHINICHI·Filed 2008·Application pending·0 cites
- 1145US7999321B2Field-effect transistor and integrated circuit including the sameNAT INST OF ADVANCED IND SCIEN·Filed 2008·Granted Aug 16, 2011·0 cites·17 claims
- 1238US10636751B2Semiconductor device including circuit having security functionAIST·Filed 2016·Granted Apr 28, 2020·0 cites·16 claims
- 1335US2007029623A1Dual-gate field effect transistorNAT INST OF ADV IND SCIENCE AN·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →