Inventor · disambiguated record
Ming-I Chen
Also filed as: CHEN MING-I
15 granted patents·1 pending application·248 citations·filing 1998–2010
92Inventor score
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16 records- 0190US6329233B1Method of manufacturing photodiode CMOS image sensorUNITED MICROELECTRONICS CORP·Filed 2000·Granted Dec 11, 2001·51 cites·20 claims
- 0286US6118142ACMOS sensorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 12, 2000·98 cites·13 claims
- 0379US6583484B2Method of manufacturing photodiode CMOS image sensorUNITED MICROELECTRONICS CORP·Filed 2001·Granted Jun 24, 2003·22 cites·7 claims
- 0475US7462532B2Method of fabricating high voltage metal oxide semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Dec 9, 2008·5 cites·10 claims
- 0570US6096573AMethod of manufacturing a CMOS sensorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Aug 1, 2000·38 cites·26 claims
- 0667US7375408B2Fabricating method of a high voltage metal oxide semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2005·Granted May 20, 2008·3 cites·10 claims
- 0757US7791137B2High voltage metal oxide semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Sep 7, 2010·1 cites·8 claims
- 0847US6307239B1CMOS sense structure having silicon dioxide outer ring around sense regionUNITED MICROELECTRONICS CORP·Filed 2000·Granted Oct 23, 2001·2 cites·6 claims
- 0945US7843012B2CMOS transistorUNITED MICROELECTRONICS CORP·Filed 2007·Granted Nov 30, 2010·0 cites·4 claims
- 1041US6153446AMethod for forming a metallic reflecting layer in a semiconductor photodiodeUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 28, 2000·10 cites·10 claims
- 1140US6146981AMethod of manufacturing buried contact in SRAMUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 14, 2000·9 cites·17 claims
- 1236US8318559B2Method of fabricating CMOS transistorCHEN MING-I·Filed 2010·Granted Nov 27, 2012·0 cites·12 claims
- 1336US6150267AMethod of manufacturing buried contact in SRAMUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 21, 2000·6 cites·19 claims
- 1436US2001034092A1CMOS sense structure having silicon dioxide outer ring around sense regionFiled 2001·Application pending·0 cites
- 1532US6187637B1Method for increasing isolation ability using shallow trenchUNITED MICROELECTRONICS CORP·Filed 1999·Granted Feb 13, 2001·3 cites·22 claims
- 1626US8426922B2CMOS structure and latch-up preventing method of sameCHAO FANG-MEI·Filed 2010·Granted Apr 23, 2013·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →