Inventor · disambiguated record
Michael P. Chudzik
Also filed as: CHUDZIK MICHAEL · CHUDZIK MICHAEL P · CHUDZIK MICHAEL PATRICK
131 granted patents·25 pending applications·2,085 citations·filing 2000–2020
99Inventor score
Top patents by PatentIndex Score
156 records- 0199US7030481B2High density chip carrier with integrated passive devicesIBM·Filed 2002·Granted Apr 18, 2006·401 cites·52 claims
- 0299US6962872B2High density chip carrier with integrated passive devicesIBM·Filed 2004·Granted Nov 8, 2005·363 cites·29 claims
- 0398US9437496B1Merged source drain epitaxyGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 6, 2016·26 cites·20 claims
- 0498US8138037B2Method and structure for gate height scaling with high-k/metal gate technologyCHUDZIK MICHAEL P·Filed 2010·Granted Mar 20, 2012·43 cites·16 claims
- 0598US7622341B2Sige channel epitaxial development for high-k PFET manufacturabilityIBM·Filed 2008·Granted Nov 24, 2009·121 cites·21 claims
- 0697US8373239B2Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectricIBM·Filed 2010·Granted Feb 12, 2013·31 cites·7 claims
- 0796US9679810B1Integrated circuit having improved electromigration performance and method of forming sameGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 13, 2017·18 cites·15 claims
- 0896US8354309B2Method of providing threshold voltage adjustment through gate dielectric stack modificationIBM·Filed 2012·Granted Jan 15, 2013·24 cites·20 claims
- 0994US9577100B2FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regionsGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 21, 2017·17 cites·13 claims
- 1094US8420473B2Replacement gate devices with barrier metal for simultaneous processingANDO TAKASHI·Filed 2010·Granted Apr 16, 2013·18 cites·21 claims
- 1194US8232148B2Structure and method to make replacement metal gate and contact metalLI ZHENGWEN·Filed 2010·Granted Jul 31, 2012·19 cites·12 claims
- 1294US7863126B2Fabrication of a CMOS structure with a high-k dielectric layer oxidizing an aluminum layer in PFET regionIBM·Filed 2008·Granted Jan 4, 2011·25 cites·10 claims
- 1394US7838908B2Semiconductor device having dual metal gates and method of manufactureIBM·Filed 2009·Granted Nov 23, 2010·28 cites·14 claims
- 1494US6930060B2Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectricIBM·Filed 2003·Granted Aug 16, 2005·90 cites·20 claims
- 1593US8629014B2Replacement metal gate structures for effective work function controlKWON UNOH·Filed 2010·Granted Jan 14, 2014·18 cites·11 claims
- 1692US7750418B2Introduction of metal impurity to change workfunction of conductive electrodesIBM·Filed 2008·Granted Jul 6, 2010·18 cites·31 claims
- 1792US7741188B2Deep trench (DT) metal-insulator-metal (MIM) capacitorIBM·Filed 2008·Granted Jun 22, 2010·41 cites·16 claims
- 1892US7732872B2Integration scheme for multiple metal gate work function structuresIBM·Filed 2007·Granted Jun 8, 2010·24 cites·14 claims
- 1992US7569466B2Dual metal gate self-aligned integrationIBM·Filed 2005·Granted Aug 4, 2009·19 cites·10 claims
- 2092US7504700B2Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said methodIBM·Filed 2005·Granted Mar 17, 2009·26 cites·20 claims
- 2192US7446380B2Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOSIBM·Filed 2005·Granted Nov 4, 2008·20 cites·15 claims
- 2292US6361598B1Method for preparing high temperature superconductorUNIV CHICAGO·Filed 2000·Granted Mar 26, 2002·40 cites·20 claims
- 2391US8575655B2Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineeringBEDELL STEPHEN W·Filed 2012·Granted Nov 5, 2013·9 cites·19 claims
- 2490US8581351B2Replacement gate with reduced gate leakage currentANDO TAKASHI·Filed 2011·Granted Nov 12, 2013·10 cites·20 claims
- 2589US7754594B1Method for tuning the threshold voltage of a metal gate and high-k deviceIBM·Filed 2009·Granted Jul 13, 2010·17 cites·23 claims
- 2689US7091118B1Replacement metal gate transistor with metal-rich silicon layer and method for making the sameIBM·Filed 2004·Granted Aug 15, 2006·49 cites·19 claims
- 2789US6451662B1Method of forming low-leakage on-chip capacitorIBM·Filed 2001·Granted Sep 17, 2002·47 cites·3 claims
- 2888US8759172B2Etch stop layer formation in metal gate processLI ZHENGWEN·Filed 2012·Granted Jun 24, 2014·7 cites·11 claims
- 2988US8030716B2Self-aligned CMOS structure with dual workfunctionIBM·Filed 2010·Granted Oct 4, 2011·8 cites·6 claims
- 3088US7425497B2Introduction of metal impurity to change workfunction of conductive electrodesIBM·Filed 2006·Granted Sep 16, 2008·14 cites·1 claims
- 3187US7943457B2Dual metal and dual dielectric integration for metal high-k FETsIBM·Filed 2009·Granted May 17, 2011·13 cites·15 claims
- 3287US7682917B2Disposable metallic or semiconductor gate spacerIBM·Filed 2008·Granted Mar 23, 2010·11 cites·20 claims
- 3387US6555430B1Process flow for capacitance enhancement in a DRAM trenchIBM·Filed 2000·Granted Apr 29, 2003·44 cites·16 claims
- 3486US9748354B2Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereofAPPLIED MATERIALS INC·Filed 2016·Granted Aug 29, 2017·5 cites·20 claims
- 3586US8952460B2Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devicesIBM·Filed 2013·Granted Feb 10, 2015·7 cites·7 claims
- 3686US8227870B2Method and structure for gate height scaling with high-k/metal gate technologyCHUDZIK MICHAEL P·Filed 2012·Granted Jul 24, 2012·7 cites·10 claims
- 3786US7872317B2Dual metal gate self-aligned integrationIBM·Filed 2009·Granted Jan 18, 2011·10 cites·11 claims
- 3886US6905944B2Sacrificial collar method for improved deep trench processingINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 14, 2005·34 cites·20 claims
- 3985US8383483B2High performance CMOS circuits, and methods for fabricating sameIBM·Filed 2009·Granted Feb 26, 2013·10 cites·15 claims
- 4084US9318336B2Non-volatile memory structure employing high-k gate dielectric and metal gateBREIL NICOLAS·Filed 2011·Granted Apr 19, 2016·6 cites·19 claims
- 4184US8021939B2High-k dielectric and metal gate stack with minimal overlap with isolation region and related methodsIBM·Filed 2007·Granted Sep 20, 2011·9 cites·14 claims
- 4283US8941177B2Semiconductor devices having different gate oxide thicknessesADAMS CHARLOTTE DEWAN·Filed 2012·Granted Jan 27, 2015·8 cites·10 claims
- 4383US7611979B2Metal gates with low charge trapping and enhanced dielectric reliability characteristics for high-k gate dielectric stacksIBM·Filed 2007·Granted Nov 3, 2009·8 cites·6 claims
- 4482US9627508B2Replacement channel TFETGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 18, 2017·3 cites·20 claims
- 4582US9196707B2Oxygen scavenging spacer for a gate electrodeIBM·Filed 2013·Granted Nov 24, 2015·4 cites·19 claims
- 4681US8901706B2Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenchesCHUDZIK MICHAEL P·Filed 2012·Granted Dec 2, 2014·4 cites·14 claims
- 4780US9087722B2Semiconductor devices having different gate oxide thicknessesIBM·Filed 2014·Granted Jul 21, 2015·4 cites·3 claims
- 4880US9059211B2Oxygen scavenging spacer for a gate electrodeCHUDZIK MICHAEL P·Filed 2011·Granted Jun 16, 2015·4 cites·18 claims
- 4980US9006064B2Multi-plasma nitridation process for a gate dielectricIBM·Filed 2013·Granted Apr 14, 2015·3 cites·17 claims
- 5080US7947549B2Gate effective-workfunction modification for CMOSIBM·Filed 2008·Granted May 24, 2011·7 cites·7 claims
Showing the top 50 of 156 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →