Inventor · disambiguated record
Michael Duane
Also filed as: DUANE MICHAEL · DUANE MICHAEL P
61 granted patents·4 pending applications·944 citations·filing 1982–2025
99Inventor score
Files withADVANCED MICRO DEVICES INC40MIE FUJITSU SEMICONDUCTOR LTD8BLOCK INC4TEXAS INSTRUMENTS INC4APPLIED MATERIALS INC3
Top patents by PatentIndex Score
65 records- 0194US11842345B2Rewards for a virtual cash cardBLOCK INC·Filed 2020·Granted Dec 12, 2023·6 cites·20 claims
- 0291US8614128B1CMOS structures and processes based on selective thinningTHOMPSON SCOTT E·Filed 2012·Granted Dec 24, 2013·10 cites·18 claims
- 0391US4566175AMethod of making insulated gate field effect transistor with a lightly doped drain using oxide sidewall spacer and double implantationsTEXAS INSTRUMENTS INC·Filed 1982·Granted Jan 28, 1986·84 cites·8 claims
- 0490US5869379AMethod of forming air gap spacer for high performance MOSFETS'ADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 9, 1999·73 cites·12 claims
- 0589US9299698B2Semiconductor structure with multiple transistors having various threshold voltagesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Mar 29, 2016·7 cites·9 claims
- 0689US9196727B2High uniformity screen and epitaxial layers for CMOS devicesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Nov 24, 2015·8 cites·7 claims
- 0785US5949092AUltra-high-density pass gate using dual stacked transistors having a gate structure with planarized upper surface in relation to interlayer insulatorADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 7, 1999·62 cites·29 claims
- 0883US9368624B2Method for fabricating a transistor with reduced junction leakage currentMIE FUJITSU SEMICONDUCTOR LTD·Filed 2015·Granted Jun 14, 2016·3 cites·1 claims
- 0983US8883600B1Transistor having reduced junction leakage and methods of forming thereofTHOMPSON SCOTT E·Filed 2012·Granted Nov 11, 2014·5 cites·13 claims
- 1082US12293351B2Peer-to-peer data object transfer and state managementBLOCK INC·Filed 2022·Granted May 6, 2025·1 cites·20 claims
- 1181US9041126B2Deeply depleted MOS transistors having a screening layer and methods thereofSUVOLTA INC·Filed 2013·Granted May 26, 2015·6 cites·19 claims
- 1280US5959337AAir gap spacer formation for high performance MOSFETsADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 28, 1999·37 cites·8 claims
- 1379US8999861B1Semiconductor structure with substitutional boron and method for fabrication thereofSCUDDER LANCE·Filed 2012·Granted Apr 7, 2015·5 cites·6 claims
- 1477US6040220AAsymmetrical transistor formed from a gate conductor of unequal thicknessADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 21, 2000·41 cites·12 claims
- 1577US6027978AMethod of making an IGFET with a non-uniform lateral doping profile in the channel regionADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 22, 2000·40 cites·44 claims
- 1675US6743685B1Semiconductor device and method for lowering miller capacitance for high-speed microprocessorsADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 1, 2004·16 cites·21 claims
- 1774US7196350B2Method and apparatus for characterizing features formed on a substrateAPPLIED MATERIALS INC·Filed 2005·Granted Mar 27, 2007·4 cites·39 claims
- 1871US5804496ASemiconductor device having reduced overlap capacitance and method of manufacture thereofADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 8, 1998·34 cites·28 claims
- 1971US5672531AMethod for fabrication of a non-symmetrical transistorADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 30, 1997·31 cites·26 claims
- 2070US5888853AIntegrated circuit including a graded grain structure for enhanced transistor formation and fabrication method thereofADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 30, 1999·35 cites·10 claims
- 2170US4677739AHigh density CMOS integrated circuit manufacturing processTEXAS INSTRUMENTS INC·Filed 1984·Granted Jul 7, 1987·22 cites·9 claims
- 2268US6004849AMethod of making an asymmetrical IGFET with a silicide contact on the drain without a silicide contact on the sourceADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 21, 1999·28 cites·7 claims
- 2367US9391076B1CMOS structures and processes based on selective thinningMIE FUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Jul 12, 2016·1 cites·7 claims
- 2465US6091118ASemiconductor device having reduced overlap capacitance and method of manufacture thereofADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 18, 2000·25 cites·8 claims
- 2565US5854115AFormation of an etch stop layer within a transistor gate conductor to provide for reduction of channel lengthADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 29, 1998·20 cites·12 claims
- 2664US5898189AIntegrated circuit including an oxide-isolated localized substrate and a standard silicon substrate and fabrication methodADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 27, 1999·22 cites·21 claims
- 2763US2025363480A1Peer-to-Peer Data Object Transfer and State ManagementBLOCK INC·Filed 2025·Application pending·0 cites
- 2862US10217838B2Semiconductor structure with multiple transistors having various threshold voltagesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2018·Granted Feb 26, 2019·0 cites·9 claims
- 2961US6727558B1Channel isolation using dielectric isolation structuresADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 27, 2004·9 cites·26 claims
- 3061US6420730B1Elevated transistor fabrication techniqueADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 16, 2002·7 cites·7 claims
- 3160US6027964AMethod of making an IGFET with a selectively doped gate in combination with a protected resistorADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 22, 2000·24 cites·33 claims
- 3260US2024119449A1Rewards for a virtual cash cardBLOCK INC·Filed 2023·Application pending·0 cites
- 3359US9812550B2Semiconductor structure with multiple transistors having various threshold voltagesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2017·Granted Nov 7, 2017·0 cites·1 claims
- 3459US8293460B2Double exposure patterning with carbonaceous hardmaskCHEN HUI W·Filed 2008·Granted Oct 23, 2012·2 cites·8 claims
- 3558US6300661B1Mutual implant region used for applying power/ground to a source of a transistor and a well of a substrateADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 9, 2001·17 cites·14 claims
- 3657US10014387B2Semiconductor structure with multiple transistors having various threshold voltagesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2016·Granted Jul 3, 2018·0 cites·10 claims
- 3757US6200862B1Mask for asymmetrical transistor formation with paired transistorsADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 13, 2001·16 cites·16 claims
- 3856US6075258AElevated transistor fabrication techniqueADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 13, 2000·12 cites·13 claims
- 3956US5940707AVertically integrated advanced transistor formationADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 17, 1999·17 cites·8 claims
- 4055US11526882B2Cryptocurrency rewards for a virtual cash cardSQUARE INC·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
- 4155US6617219B1Semiconductor device and method for lowering miller capacitance by modifying source/drain extensions for high speed microprocessorsADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 9, 2003·4 cites·20 claims
- 4255US6077748AAdvanced trench isolation fabrication scheme for precision polysilicon gate controlADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 20, 2000·19 cites·16 claims
- 4354US5693547AMethod of making vertical MOSFET with sub-trench source contactADVANCED MICRO DEVICES INC·Filed 1996·Granted Dec 2, 1997·19 cites·12 claims
- 4454US4569117AMethod of making integrated circuit with reduced narrow-width effectTEXAS INSTRUMENTS INC·Filed 1984·Granted Feb 11, 1986·18 cites·8 claims
- 4553US6069046ATransistor fabrication employing implantation of dopant into junctions without subjecting sidewall surfaces of a gate conductor to ion bombardmentADVANCED MICRO DEVICES INC·Filed 1997·Granted May 30, 2000·14 cites·8 claims
- 4652US6376350B1Method of forming low resistance gate electrodeADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 23, 2002·5 cites·14 claims
- 4752US6030875AMethod for making semiconductor device having nitrogen-rich active region-channel interfaceADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 29, 2000·17 cites·18 claims
- 4852US5963809AAsymmetrical MOSFET with gate pattern after source/drain formationADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 5, 1999·14 cites·20 claims
- 4952US5834350AElevated transistor fabrication techniqueADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 10, 1998·10 cites·11 claims
- 5051US7459319B2Method and apparatus for characterizing features formed on a substrateAPPLIED MATERIALS INC·Filed 2007·Granted Dec 2, 2008·0 cites·21 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →