Inventor · disambiguated record
Ming-Shiang Lin
Also filed as: LIN MING · LIN MING-SHIANG
21 granted patents·4 pending applications·28 citations·filing 2017–2025
92Inventor score
Top patents by PatentIndex Score
25 records- 0193US11450016B1Nearshore real-time positioning and mapping method for unmanned surface vehicle with multiple distance measuring sensorsUNIV GUANGDONG TECHNOLOGY·Filed 2022·Granted Sep 20, 2022·9 cites·7 claims
- 0292US2025366074A1Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0391US11387360B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
- 0489US10818562B2Semiconductor structure and testing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 27, 2020·4 cites·20 claims
- 0589US10707347B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 7, 2020·3 cites·20 claims
- 0688US12349493B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 1, 2025·2 cites·20 claims
- 0788US10732209B2Semiconductor test device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·3 cites·20 claims
- 0887US10670641B2Semiconductor test device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 2, 2020·2 cites·19 claims
- 0983US12336216B2Ferroelectric semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 1078US12408387B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 1178US11855221B2Ferroelectric semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 1278US2025318302A1Transparent refraction structure for an image sensor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1377US12243930B2Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 1473US12376402B2Transparent refraction structure for an image sensor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 1573US2025176240A1Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1672US11189726B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·0 cites·20 claims
- 1772US2025287714A1Method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1871US10797174B2Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·1 cites·15 claims
- 1971US10505040B2Method of manufacturing a semiconductor device having a gate with ferroelectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·1 cites·20 claims
- 2071US10395937B2Fin patterning for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 27, 2019·1 cites·20 claims
- 2169US11513145B2Semiconductor test device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·0 cites·20 claims
- 2268US11942380B2Semiconductor structure and testing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 26, 2024·0 cites·20 claims
- 2365US11522085B2Ferroelectric semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 6, 2022·0 cites·20 claims
- 2463US11444174B2Semiconductor device with Fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 13, 2022·0 cites·20 claims
- 2552US11749700B2Transparent refraction structure for an image sensor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →