Inventor · disambiguated record

Ming Chyi Liu

Also filed as: LIU MING · LIU MING CHYI · LIU MING H

171 granted patents·45 pending applications·377 citations·filing 2002–2025

99Inventor score

Technology areasH10W H10D H10P H01L H10F

Files withTAIWAN SEMICONDUCTOR MFG CO LTD180 TAIWAN SEMICONDUCTOR MFG24 LIU MING CHYI3 UNIV TEXAS3 CHANG LI-WEN1

Top patents by PatentIndex Score

216 records

0199US11361971B2High aspect ratio Bosch deep etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·5 cites·20 claims
0298US10734394B2Cell boundary structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 4, 2020·5 cites·20 claims
0397US10134748B2Cell boundary structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·14 cites·20 claims
0497US9991333B1Metal-insulator-metal (MIM) capacitor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 5, 2018·19 cites·20 claims
0596US10134945B1Wafer to wafer bonding techniques for III-V wafers and CMOS wafersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·18 cites·20 claims
0696US9570454B2Structure with emedded EFS3 and FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·15 cites·20 claims
0795US11532579B2Passivation structure with increased thickness for metal padsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
0895US11329128B2High voltage device with gate extensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·3 cites·20 claims
0995US11256114B2Semiconductor device and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·3 cites·20 claims
1095US10614948B2Method for forming inductor structure with magnetic materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 7, 2020·3 cites·20 claims
1195US9349741B2Recessed salicide structure to integrate a flash memory device with a high κ, metal gate logic deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 24, 2016·22 cites·20 claims
1294US12057418B2Passivation structure with increased thickness for metal padsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·2 cites·20 claims
1394US12022651B2Flash memory structure with enhanced floating gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 25, 2024·2 cites·20 claims
1494US11735624B2Multi-lateral recessed MIM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·20 claims
1594US9219109B2Inductor structure with magnetic materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 22, 2015·4 cites·20 claims
1693US10509169B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·8 cites·20 claims
1793US10003022B2RRAM cell structure with conductive etch-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 19, 2018·8 cites·20 claims
1893US7709872B2Methods for fabricating image sensor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 4, 2010·16 cites·16 claims
1992US11652025B2Through-substrate via formation to enlarge electrochemical plating windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·2 cites·20 claims
2092US11069873B2Formation of a two-layer via structure to mitigate damage to a display deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·3 cites·20 claims
2192US10535671B2Cell boundary structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 14, 2020·5 cites·20 claims
2292US9431257B2Salicided structure to integrate a flash memory device with a high κ, metal gate logic deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 30, 2016·12 cites·20 claims
2392US7883917B2Semiconductor device with bonding padTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Feb 8, 2011·20 cites·8 claims
2491US10903366B1Forming fin-FET semiconductor structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 26, 2021·6 cites·20 claims
2591US9728719B2Leakage resistant RRAM/MIM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 8, 2017·6 cites·20 claims
2691US9620372B2HK embodied flash memory and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·6 cites·20 claims
2791US9224615B2Noble gas bombardment to reduce scallops in bosch etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 29, 2015·12 cites·20 claims
2890US9136393B2HK embodied flash memory and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 15, 2015·8 cites·20 claims
2990US8629038B2FinFETs with vertical fins and methods for forming the sameLIU MING-CHYI·Filed 2012·Granted Jan 14, 2014·9 cites·19 claims
3089US11355596B2High power device with self-aligned field plateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·2 cites·20 claims
3189US11209673B2Heater structure configured to improve thermal efficiency in a modulator deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·2 cites·20 claims
3289US11152384B2Boundary structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·5 cites·20 claims
3389US11107825B2Flash memory structure with enhanced floating gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 31, 2021·2 cites·20 claims
3489US9196677B2FinFETs with vertical fins and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 24, 2015·6 cites·20 claims
3589US8928120B1Wafer edge protection structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 6, 2015·8 cites·20 claims
3689US2025102887A1Device with a recessed gate electrode that has high thickness uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3788US11226506B2Heater structure with a gas-filled isolation structure to improve thermal efficiency in a modulator deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·2 cites·20 claims
3888US10269711B1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·5 cites·20 claims
3988US9048128B2Inductor structure with magnetic materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 2, 2015·4 cites·20 claims
4088US2025098160A1Etch method for opening a source line in flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4187US11411086B2Field plate and isolation structure for high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·2 cites·20 claims
4287US10784278B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 22, 2020·4 cites·20 claims
4387US9048087B2Methods for wet clean of oxide layers over epitaxial layersTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 2, 2015·8 cites·20 claims
4487US7883926B2Methods for fabricating image sensor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 8, 2011·4 cites·16 claims
4586US12204232B2Semiconductor device having a gate electrode with a top peripheral portion and a top central portion, and the top peripheral portion is a protrusion or a depression surrounding the top central portionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
4686US10734398B2Flash memory structure with enhanced floating gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·3 cites·20 claims
4786US2024363777A1Dielectric sidewall structure for quality improvement in ge and sige devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4886US2024357854A1Formation of a two-layer via structure to mitigate damage to a display deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4985US2025366241A1Uniform trenches in semiconductor devices and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
5084US12211896B2High voltage device with gate extensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 28, 2025·0 cites·20 claims

Showing the top 50 of 216 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →